NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures

NER：基于三维GeSi纳米结构的高效发光体

• 批准号: 0209422
• 负责人: Leonid Tsybeskov
• 金额: $ 7.5万
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-15 至 2004-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0209422&HistoricalAwards=false
• 关键词: NER; Efficient; Light; Emitters; Based

AbstractProposal Number: ECS - 0209422Principal Investigator: Leonid TsybeskovInstitution: New Jersey Institute of TechnologyTitle: NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures This proposal was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NER. As frequency of modern processors approach a GHz domain, the search for an alternative interconnects has intensified. Thus, within the next ten years a new interconnects technology must be developed which can support the exponential growth of processor speed experienced over the last three decades. Several alternative interconnects technologies are being pursued including transmission lines and integrated, high speed opto-couplers. The indirect band structure and poor efficiency of radiative recombination in major semiconducting materials (Si, Ge, SiGe), have limited the last approach.Despite the fact that silicon and germanium are the most studied semiconductors, not one but several totally surprising discoveries have been recently reported. Examples include visible photoluminescence from Si nanocrystals and different forms of self-organization in Ge nanocrystals grown on a Si substrate. This project is aimed to find links between structural and optical properties in three-dimensional SiGe nanostructures, to better understand and enhance conditions leading to the domination of direct carrier recombination, and to explore feasibility of novel devices utilizing efficient light emission in these nanostructures. The project will be performed at New Jersey Institute of Technology in Newark, NJ in close collaboration with industrial partners (Hewlett-Packard and IBM). The educational part of this project includes development at NJIT, a public research institution, in a diverse major metropolitan area a comprehensive, multidisciplinary program focused on nanotechnology and nanoscience.

摘要提案号：ECS - 0209422项目负责人：Leonid tsybeskov机构：新泽西理工学院标题：NER：基于三维GeSi纳米结构的高效光发射体。该提案收到于纳米尺度科学与工程计划，NSF 01-157， NER类别。随着现代处理器的频率接近千兆赫（GHz）域，对替代互连的研究也在加强。因此，在未来十年内，必须开发一种新的互连技术，以支持过去三十年来处理器速度的指数级增长。目前正在研究几种替代互连技术，包括传输线和集成的高速光耦合器。主要半导体材料（Si, Ge, SiGe）的间接能带结构和较差的辐射复合效率限制了最后一种方法。尽管硅和锗是被研究得最多的半导体，但最近有几个完全令人惊讶的发现被报道出来。例子包括硅纳米晶体的可见光发光和生长在硅衬底上的锗纳米晶体的不同形式的自组织。本项目旨在寻找三维SiGe纳米结构的结构和光学性质之间的联系，以更好地理解和增强导致直接载流子重组占主导地位的条件，并探索在这些纳米结构中利用高效光发射的新型器件的可行性。该项目将在新泽西州纽瓦克的新泽西理工学院进行，与工业伙伴（惠普和IBM）密切合作。该项目的教育部分包括在新泽西理工大学，一个公共研究机构，在一个多元化的主要大都市地区开发一个全面的，多学科的项目，重点是纳米技术和纳米科学。