NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures

建议编号：ECS-0209422主要研究员：Leonid Tsybeskov研究所：新泽西理工学院标题：NER：基于三维GeSi纳米结构的高效光发射器本提案是对NSF 01-157，NER类纳米尺度科学与工程倡议的响应。随着现代处理器的频率接近GHz域，对替代互连的搜索已经加强。因此，在接下来的十年内，必须开发一种新的互连技术，以支持过去三十年经历的处理器速度的指数增长。人们正在寻求几种替代的互连技术，包括传输线和集成的高速光耦合器。主要半导体材料(Si，Ge，SiGe)的间接能带结构和低辐射复合效率限制了最后一种方法。尽管硅和锗是研究最多的半导体，但最近报道的不是一个而是几个完全令人惊讶的发现。例子包括硅纳米晶体的可见光致发光和在硅衬底上生长的锗纳米晶体中不同形式的自组织。本项目旨在寻找三维SiGe纳米结构的结构和光学性质之间的联系，更好地理解和加强导致直接载流子复合的条件，并探索在这些纳米结构中利用高效光发射的新型器件的可行性。该项目将在新泽西州纽瓦克的新泽西理工学院与工业合作伙伴(惠普和IBM)密切合作进行。该项目的教育部分包括在一个不同的主要大都市地区的公共研究机构NJIT开发一个专注于纳米技术和纳米科学的综合、多学科计划。

AbstractProposal Number: ECS - 0209422Principal Investigator: Leonid TsybeskovInstitution: New Jersey Institute of TechnologyTitle: NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures This proposal was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NER. As frequency of modern processors approach a GHz domain, the search for an alternative interconnects has intensified. Thus, within the next ten years a new interconnects technology must be developed which can support the exponential growth of processor speed experienced over the last three decades. Several alternative interconnects technologies are being pursued including transmission lines and integrated, high speed opto-couplers. The indirect band structure and poor efficiency of radiative recombination in major semiconducting materials (Si, Ge, SiGe), have limited the last approach.Despite the fact that silicon and germanium are the most studied semiconductors, not one but several totally surprising discoveries have been recently reported. Examples include visible photoluminescence from Si nanocrystals and different forms of self-organization in Ge nanocrystals grown on a Si substrate. This project is aimed to find links between structural and optical properties in three-dimensional SiGe nanostructures, to better understand and enhance conditions leading to the domination of direct carrier recombination, and to explore feasibility of novel devices utilizing efficient light emission in these nanostructures. The project will be performed at New Jersey Institute of Technology in Newark, NJ in close collaboration with industrial partners (Hewlett-Packard and IBM). The educational part of this project includes development at NJIT, a public research institution, in a diverse major metropolitan area a comprehensive, multidisciplinary program focused on nanotechnology and nanoscience.