MRI: Acquisition of a low-temperature spectroscopic system with a nanometer spatial resolution
MRI:获取具有纳米空间分辨率的低温光谱系统
基本信息
- 批准号:0521087
- 负责人:
- 金额:$ 20.75万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-08-15 至 2007-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Proposal Number: 0521087PI Name: Tsybeskov, LeonidPI Institution: New Jersey Institute of Technology Intellectual Merit: This grant will fund the acquisition of a low-temperature scanning probe microscope (SPM) tip, which the PI intends to use as the core of a new system for low-temperature optical spectroscopy at the nanometer level, using new design principles developed and tested in previous work. The new system in turn will be applied to research in a variety of nanotechnology areas - quantum dot photodetectors and emitters, nanowire-based devices, nano-magnetics, molecular electron devices, etc.Broader Impacts: This group will be working in partnership with two industrial collaborators - Lucent Bell Laboratories and TQ Optoelectronics - to develop and use the new system. They will develop new courses, practical training and outreach at NJIT. The outreach program will offer opportunities to students and teachers at Newark Central High School and Orange Middle School, and will offer strong participation of under-represented minorities.
提案编号:0521087 PI姓名: Tsybeskov,LeonidPI机构:新泽西理工学院智力奖:该补助金将资助低温扫描探针显微镜(SPM)尖端的收购,PI打算将其用作纳米级低温光谱学新系统的核心,使用在以前的工作中开发和测试的新设计原则。新的系统反过来将被应用于各种纳米技术领域的研究-量子点光电探测器和发射器,基于硅的设备,纳米磁学,分子电子设备等。更广泛的影响:这个小组将与两个工业合作伙伴-朗讯贝尔实验室和TQ光电-开发和使用新的系统。他们将在NJIT开发新的课程,实践培训和推广。 外联方案将为纽瓦克中央高中和橙子中学的学生和教师提供机会,并将为代表性不足的少数民族提供强有力的参与。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Leonid Tsybeskov其他文献
Leonid Tsybeskov的其他文献
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{{ truncateString('Leonid Tsybeskov', 18)}}的其他基金
Resonant Energy Transfer Based Electrically Pumped Hybrid Lasers
基于谐振能量转移的电泵浦混合激光器
- 批准号:
2221010 - 财政年份:2022
- 资助金额:
$ 20.75万 - 项目类别:
Continuing Grant
Engineering Silicon/Silicon-Germanium Nanostructure Heterointerfaces: Toward Group IV Light Emitters and Lasers
工程硅/硅-锗纳米结构异质界面:面向 IV 族发光体和激光器
- 批准号:
1005682 - 财政年份:2010
- 资助金额:
$ 20.75万 - 项目类别:
Continuing Grant
Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices
用于新型转移电子器件的硅-锗纳米柱异质结
- 批准号:
1027770 - 财政年份:2010
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
用于集成光发射器的硅-锗量子阱量子点纳米结构
- 批准号:
0725443 - 财政年份:2007
- 资助金额:
$ 20.75万 - 项目类别:
Continuing Grant
Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
基于硅纳米晶金字塔点复合物的新型存储器件
- 批准号:
0422039 - 财政年份:2004
- 资助金额:
$ 20.75万 - 项目类别:
Continuing Grant
NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures
NER:基于三维GeSi纳米结构的高效发光体
- 批准号:
0209422 - 财政年份:2002
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
目标:纳米晶硅超晶格的制造和电子性能
- 批准号:
0296048 - 财政年份:2001
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
美法合作研究:硅量子点电子学
- 批准号:
0296059 - 财政年份:2001
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
美法合作研究:硅量子点电子学
- 批准号:
9909264 - 财政年份:2000
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
目标:纳米晶硅超晶格的制造和电子性能
- 批准号:
9901064 - 财政年份:1999
- 资助金额:
$ 20.75万 - 项目类别:
Standard Grant
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