Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
批准号:
0725443
负责人:
Leonid Tsybeskov
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-15 至 2013-01-31
中文摘要
Tsybeskov,0725443,提出本研究的目标是开发基于Si/SiGe量子阱-量子点系统的新型、与cmos兼容的发光纳米结构,并证明集成光学互连的可行性。该方法通过使用富Ge的SiGe纳米团簇作为组份设计的SiGe量子阱的局部应力源来进行纳米尺度的应变场和能带结构工程。智能优点:该项目的技术目标是:(I)在1.3-1.6um谱区的快速辐射电子跃迁,与增强的Si/SiGe异质界面的动态I类能带排列相关,(Ii)高量子效率和(Iii)近室温器件工作。将对这些成分控制的量子点-量子阱Si/SiGe纳米结构中的电子跃迁进行理论建模,重点是抑制俄歇复合。该计划的更广泛影响包括对NJIT学生进行具有战略重要性的半导体纳米电子和纳米技术领域的全面培训,研究和教育的整合,以及促进美国新泽西州的一所公立大学与加拿大和日本的领先研究机构之间的国际伙伴关系。这项提议的一个重要组成部分是关于纳米技术的公共教育,以及通过面向本科生和高中生的讲座、示范、实验室参观和暑期研究项目,向科技界代表性不足的群体开展外联工作。
英文摘要
Tsybeskov, 0725443, Proposal The objective of this research is to develop novel, CMOS compatible light-emitting nanostructures based on Si/SiGe quantum well-quantum dot systems and demonstrate feasibility of integrated optical interconnects. The approach is focused on a nanoscale strain field and energy band structure engineering by using Ge-rich SiGe nanoclusters as local stressors for composition-designed SiGe quantum wells.Intellectual merit: The technical goals of this project are: (i) fast radiative electronic transitions at 1.3-1.6 um spectral region associated with the enhanced dynamic type I energy band alignment at Si/SiGe hetero-interfaces, (ii) high quantum efficiency and (iii) near room-temperature device operation. Theoretical modeling of electronic transitions in these composition-controlled quantum dot-quantum well Si/SiGe nanostructures with focus on the suppression of Auger recombination will be performed.The broader impacts of this program include comprehensive training of NJIT students in the strategically important area of semiconductor nanoelectronics and nanotechnology, integration of research and education, and promotion of international partnerships between a public university in New Jersey, USA and leading research institutions in Canada and Japan. An important component of this proposal is public education on nanotechnology and outreach efforts to underrepresented groups in science and technology via lectures, demonstrations, laboratory tours and summer research programs for undergraduate and high-school students.
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会议论文
Resonant Energy Transfer Based Electrically Pumped Hybrid Lasers
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批准号:2221010
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项目类别:Continuing Grant
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资助金额:$44.53万
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财政年份:2022
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负责人:Leonid Tsybeskov
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依托单位:
Engineering Silicon/Silicon-Germanium Nanostructure Heterointerfaces: Toward Group IV Light Emitters and Lasers
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批准号:1005682
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项目类别:Continuing Grant
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资助金额:$30.82万
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财政年份:2010
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负责人:Leonid Tsybeskov
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依托单位:
Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices
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批准号:1027770
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项目类别:Standard Grant
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资助金额:$28.0万
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财政年份:2010
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MRI: Acquisition of a low-temperature spectroscopic system with a nanometer spatial resolution
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批准号:0521087
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项目类别:Standard Grant
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资助金额:$20.75万
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财政年份:2005
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负责人:Leonid Tsybeskov
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依托单位:
Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
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批准号:0422039
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Leonid Tsybeskov
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依托单位:
NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures
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批准号:0209422
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:2002
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负责人:Leonid Tsybeskov
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依托单位:
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
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批准号:0296048
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项目类别:Standard Grant
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资助金额:$26.06万
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财政年份:2001
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负责人:Leonid Tsybeskov
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依托单位:
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
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批准号:0296059
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项目类别:Standard Grant
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资助金额:$1.75万
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财政年份:2001
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负责人:Leonid Tsybeskov
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依托单位:
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
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批准号:9909264
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项目类别:Standard Grant
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资助金额:$1.75万
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财政年份:2000
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负责人:Leonid Tsybeskov
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依托单位:
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
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批准号:9901064
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项目类别:Standard Grant
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资助金额:$26.06万
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财政年份:1999
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负责人:Leonid Tsybeskov
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依托单位:
海外基金