Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters

用于集成光发射器的硅-锗量子阱量子点纳米结构

• 批准号: 0725443
• 负责人: Leonid Tsybeskov
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-08-15 至 2013-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725443&HistoricalAwards=false
• 关键词: Silicon; germanium; quantum; well; dot

Tsybeskov, 0725443, Proposal The objective of this research is to develop novel, CMOS compatible light-emitting nanostructures based on Si/SiGe quantum well-quantum dot systems and demonstrate feasibility of integrated optical interconnects. The approach is focused on a nanoscale strain field and energy band structure engineering by using Ge-rich SiGe nanoclusters as local stressors for composition-designed SiGe quantum wells.Intellectual merit: The technical goals of this project are: (i) fast radiative electronic transitions at 1.3-1.6 um spectral region associated with the enhanced dynamic type I energy band alignment at Si/SiGe hetero-interfaces, (ii) high quantum efficiency and (iii) near room-temperature device operation. Theoretical modeling of electronic transitions in these composition-controlled quantum dot-quantum well Si/SiGe nanostructures with focus on the suppression of Auger recombination will be performed.The broader impacts of this program include comprehensive training of NJIT students in the strategically important area of semiconductor nanoelectronics and nanotechnology, integration of research and education, and promotion of international partnerships between a public university in New Jersey, USA and leading research institutions in Canada and Japan. An important component of this proposal is public education on nanotechnology and outreach efforts to underrepresented groups in science and technology via lectures, demonstrations, laboratory tours and summer research programs for undergraduate and high-school students.

本研究的目的是开发基于Si/SiGe量子阱-量子点系统的新型CMOS兼容发光纳米结构，并证明集成光互连的可行性。该方法将富锗SiGe纳米团簇作为复合材料设计的SiGe量子阱的局部应力源，重点研究纳米级应变场和能带结构工程。智力优势：该项目的技术目标是：(i)与Si/SiGe异质界面增强的动态i型能带取向相关的1.3-1.6 um光谱区域的快速辐射电子跃迁，（ii）高量子效率和（iii）近室温设备操作。将对这些成分控制的量子点-量子阱Si/SiGe纳米结构中的电子跃迁进行理论建模，重点是对俄歇复合的抑制。该计划的广泛影响包括在半导体纳米电子学和纳米技术的战略重要领域对新泽西理工大学的学生进行全面培训，整合研究和教育，促进美国新泽西州一所公立大学与加拿大和日本领先研究机构之间的国际伙伴关系。该提案的一个重要组成部分是关于纳米技术的公共教育，并通过讲座、示范、实验室参观和面向本科生和高中生的暑期研究项目，向在科学技术领域未被充分代表的群体进行拓展。