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Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters

Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
用于集成光发射器的硅-锗量子阱量子点纳米结构
批准号:
0725443
负责人:
Leonid Tsybeskov
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-15 至 2013-01-31

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中文摘要
翻译
Tsybeskov,0725443,提案本研究的目的是开发新的,CMOS兼容的发光纳米结构的基础上Si/SiGe量子阱量子点系统,并证明集成光学互连的可行性。该方法的重点是纳米级应变场和能带结构工程,通过使用富锗SiGe纳米团簇作为局部应力源,用于成分设计的SiGe量子威尔斯。智力价值:该项目的技术目标是:(i)与Si/SiGe异质界面处的增强的动态I型能带对准相关的1.3-1.6 μ m光谱区域处的快速辐射电子跃迁,(ii)高量子效率和(iii)接近室温的器件操作。本课程将进行这些成分控制的量子点-量子阱Si/SiGe纳米结构中电子跃迁的理论模拟,重点是俄歇复合的抑制。该项目的更广泛的影响包括在半导体纳米电子学和纳米技术的战略重要领域对NJIT学生进行全面培训,整合研究和教育,以及促进美国新泽西一所公立大学与加拿大和日本领先研究机构之间的国际伙伴关系。这项建议的一个重要组成部分是关于纳米技术的公共教育,以及通过讲座、演示、实验室图尔斯参观和本科生和高中生暑期研究计划,向科学和技术领域代表性不足的群体开展外联工作。
英文摘要
Tsybeskov, 0725443, Proposal The objective of this research is to develop novel, CMOS compatible light-emitting nanostructures based on Si/SiGe quantum well-quantum dot systems and demonstrate feasibility of integrated optical interconnects. The approach is focused on a nanoscale strain field and energy band structure engineering by using Ge-rich SiGe nanoclusters as local stressors for composition-designed SiGe quantum wells.Intellectual merit: The technical goals of this project are: (i) fast radiative electronic transitions at 1.3-1.6 um spectral region associated with the enhanced dynamic type I energy band alignment at Si/SiGe hetero-interfaces, (ii) high quantum efficiency and (iii) near room-temperature device operation. Theoretical modeling of electronic transitions in these composition-controlled quantum dot-quantum well Si/SiGe nanostructures with focus on the suppression of Auger recombination will be performed.The broader impacts of this program include comprehensive training of NJIT students in the strategically important area of semiconductor nanoelectronics and nanotechnology, integration of research and education, and promotion of international partnerships between a public university in New Jersey, USA and leading research institutions in Canada and Japan. An important component of this proposal is public education on nanotechnology and outreach efforts to underrepresented groups in science and technology via lectures, demonstrations, laboratory tours and summer research programs for undergraduate and high-school students.
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Resonant Energy Transfer Based Electrically Pumped Hybrid Lasers
  • 批准号:
    2221010
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $44.53万
  • 财政年份:
    2022
  • 负责人:
    Leonid Tsybeskov
  • 依托单位:
Engineering Silicon/Silicon-Germanium Nanostructure Heterointerfaces: Toward Group IV Light Emitters and Lasers
  • 批准号:
    1005682
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.82万
  • 财政年份:
    2010
  • 负责人:
    Leonid Tsybeskov
  • 依托单位:
Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices
  • 批准号:
    1027770
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.0万
  • 财政年份:
    2010
  • 负责人:
    Leonid Tsybeskov
  • 依托单位:
MRI: Acquisition of a low-temperature spectroscopic system with a nanometer spatial resolution
  • 批准号:
    0521087
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.75万
  • 财政年份:
    2005
  • 负责人:
    Leonid Tsybeskov
  • 依托单位:
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