Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
批准号:
0422039
负责人:
Leonid Tsybeskov
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-15 至 2009-07-31
中文摘要
在与摩托罗拉和飞思卡尔半导体的合作中,我们提出了基于高度组织的、尺寸和形状可控的硅纳米晶体(nc)三维阵列的新型纳米结构的制造和研究。这些三维纳米结构将以金字塔点复合物的形式制备,其中接近球形的Si nc(即量子点)将直接放置在横向有序的Si金字塔的顶部。利用这种技术,我们打算在新的存储设备中开发这些新颖的结构。这些器件通过纳米直径硅量子点的离散能级利用纳米级硅金字塔的谐振载流子注入。本项目令人兴奋但具有挑战性的目标是:(i)开发一种专注于Si NC金字塔点复合物的高度有序三维网络的纳米制造技术。(二)锥点硅纳米管耦合系统谐振载流子注入的实验研究与理论建模。(iii)基于Si NC金字塔/点复合物的超快速非易失性存储器件原型的制造和测试。通过实现这些目标,我们将在更快的基于nc的非易失性存储器和新电路功能方面取得根本性进展。更广泛的影响本提案中的研究和教育的整合将(i)通过将拟议的研究进展整合到新泽西理工大学的本科和研究生课程中,以及(ii)通过向我们当地的大学预科学生和学校教师提供外展计划来实现。对于最年轻的学生,我们在新泽西理工大学的新项目将延伸到当地的K-12社区,提供最先进的实验室参观,并指导高中教师暑期课程,重点关注现代电子设备和电路。由于其多元化的学生群体和城市地理位置,新泽西理工大学有一个独特的机会来追求历史上在科学和工程领域代表性不足的群体。
英文摘要
In collaboration with Motorola and Freescale Semiconductor, we propose the fabrication and study of novel nanostructures based on highly organized, three-dimensional arrays of size and shape controlled silicon nanocrystals (NCs). These three-dimensional nanostructures will be prepared in the form of pyramid-dot complexes where nearly spherical Si NCs (i.e., quantum dots) will be placed directly on top of laterally ordered Si pyramids. Using this technique, we intend to exploit these novel structures in new memory devices. These devices utilize resonant carrier injection from nanoscale Si pyramids via discrete energy levels of nanometer diameter Si quantum dots. The exciting but challenging goals of this project are:(i) Development of a nanofabrication technique focused on highly ordered three- dimensional network of Si NC pyramid-dot complexes.(ii) Experimental studies and theoretical modeling of resonant carrier injection in a system of coupled pyramid-dot Si NCs.(iii) Fabrication and testing of ultra-fast, non-volatile memory device prototypes based on Si NC pyramid/dot complexes. By achieving these goals, we will constitute fundamental advances in faster Si NC-based non-volatile memories and novel circuit functionalities.Broader Impact The integration of research and education in this proposal will be done (i) via integrating the proposed research advances into the undergraduate and graduate NJIT curriculum, and (ii) by offering outreach programs to pre-college students and school teachers in our local area. For the youngest students, our new project at NJIT will reach out to the local K-12 community with state-of-the art laboratory tours and mentoring high school teacher summer classes with focus on modern electronic devices and circuits. With its ethnically diverse student body and urban location, NJIT has a unique opportunity to pursue groups historically under-represented in science and engineering.
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