Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes

基于硅纳米晶金字塔点复合物的新型存储器件

• 批准号: 0422039
• 负责人: Leonid Tsybeskov
• 金额: --
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-08-15 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0422039&HistoricalAwards=false
• 关键词: Novel; Memory; Devices; Based; Silicon

In collaboration with Motorola and Freescale Semiconductor, we propose the fabrication and study of novel nanostructures based on highly organized, three-dimensional arrays of size and shape controlled silicon nanocrystals (NCs). These three-dimensional nanostructures will be prepared in the form of pyramid-dot complexes where nearly spherical Si NCs (i.e., quantum dots) will be placed directly on top of laterally ordered Si pyramids. Using this technique, we intend to exploit these novel structures in new memory devices. These devices utilize resonant carrier injection from nanoscale Si pyramids via discrete energy levels of nanometer diameter Si quantum dots. The exciting but challenging goals of this project are:(i) Development of a nanofabrication technique focused on highly ordered three- dimensional network of Si NC pyramid-dot complexes.(ii) Experimental studies and theoretical modeling of resonant carrier injection in a system of coupled pyramid-dot Si NCs.(iii) Fabrication and testing of ultra-fast, non-volatile memory device prototypes based on Si NC pyramid/dot complexes. By achieving these goals, we will constitute fundamental advances in faster Si NC-based non-volatile memories and novel circuit functionalities.Broader Impact The integration of research and education in this proposal will be done (i) via integrating the proposed research advances into the undergraduate and graduate NJIT curriculum, and (ii) by offering outreach programs to pre-college students and school teachers in our local area. For the youngest students, our new project at NJIT will reach out to the local K-12 community with state-of-the art laboratory tours and mentoring high school teacher summer classes with focus on modern electronic devices and circuits. With its ethnically diverse student body and urban location, NJIT has a unique opportunity to pursue groups historically under-represented in science and engineering.

与摩托罗拉和飞思卡尔半导体公司合作，我们提出了基于高度组织的，三维阵列的大小和形状控制的硅纳米晶体（NC）的新型纳米结构的制造和研究。这些三维纳米结构将以纳米点复合物的形式制备，其中接近球形的Si NC（即，量子点）将直接放置在横向有序的Si金字塔的顶部上。使用这种技术，我们打算利用这些新的结构在新的存储器设备。这些器件利用从纳米级硅金字塔经由纳米直径硅量子点的离散能级的共振载流子注入。该项目的令人兴奋但具有挑战性的目标是：（i）开发专注于Si NC纳米点复合物的高度有序的三维网络的纳米纤维技术。(ii)耦合硅纳米芯片系统中谐振载流子注入的实验研究和理论建模。(iii)基于Si NC金字塔/点复合体的超快速非易失性存储器器件原型的制造和测试。 通过实现这些目标，我们将在更快的基于Si NC的非易失性存储器和新型电路功能方面取得根本性进展。 研究和教育的整合在这个建议将完成（一）通过整合到本科和研究生NJIT课程的建议的研究进展，及（ii）通过提供推广计划，在我们当地的大学预科学生和学校教师。对于最年轻的学生，我们在NJIT的新项目将接触到当地的K-12社区，提供最先进的实验室图尔斯参观和指导高中教师暑期课程，重点是现代电子设备和电路。凭借其种族多元化的学生群体和城市位置，NJIT有一个独特的机会，追求在科学和工程历史上代表性不足的群体。