GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices

目标:纳米晶硅超晶格的制造和电子性能

基本信息

  • 批准号:
    9901064
  • 负责人:
  • 金额:
    $ 26.06万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    1999
  • 资助国家:
    美国
  • 起止时间:
    1999-07-01 至 2001-11-30
  • 项目状态:
    已结题

项目摘要

This GOALI project is a collaborative research activity between Motorola and the University of Rochester. The project addresses fundamental materials science synthesis and processing issues, fabrication, and exploratory applications of Si nanocrystal layered structures. Structural characterization, and modeling of the role of surface and interface stress in controlled a-Si recrystallization and related issues such as Si nanocrystal size distribution, positioning including lateral separation, crystallographic orientation, and surface passivation will be studied. Silicon quantum dot electronics, including high-density memory cells and other devices based on single-electron phenomena will be evaluated. The research will be performed by several investigators from the University of Rochester and Motorola in collaboration with Rochester Institute of Technology, the National Research Council, Ottawa, Canada, and the Naval Research Laboratory, Washington, DC. The program represents a partnership between academic institutions, government laboratories, and industry, yielding a collaboration between technologists, experimentalists, and theorists to address basic issues in silicon nanoscale materials science and technology.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important fabrication aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance of advanced devices and circuits for computing and communications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. Educational features of the project include special opportunities for students from the University of Rochester and Rochester Institute of Technology to experience academic and industrial research perspectives and approaches, and access to special instrumentation and facilities. The project is co-supported by the MPS OMA(Office of Multidisciplinary Activities).***
GOALI项目是摩托罗拉和罗切斯特大学的一项合作研究活动。该项目解决了基础材料科学合成和加工问题,制造和探索性应用的硅层状结构。结构表征,和建模的作用,表面和界面应力在控制a-Si再结晶和相关问题,如Si晶粒尺寸分布,定位,包括横向分离,晶体取向,和表面钝化将进行研究。硅量子点电子学,包括高密度存储单元和其他基于单电子现象的器件将被评估。这项研究将由来自罗切斯特大学和摩托罗拉的几名研究人员与罗切斯特理工学院、加拿大渥太华的国家研究理事会和华盛顿的海军研究实验室合作进行。该计划代表了学术机构、政府实验室和工业界之间的合作伙伴关系,使技术专家、实验人员和理论家能够合作解决硅纳米材料科学和技术中的基本问题。该项目涉及材料科学专题领域的基础研究问题,具有很高的潜在技术相关性。该研究将在基础水平上为电子/光子器件的重要制造方面提供基础材料科学知识。从研究中获得的基本知识和理解有望有助于提高先进计算和通信设备和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目的教育特点包括为来自罗切斯特大学和罗切斯特理工学院的学生提供特殊机会,以体验学术和工业研究的观点和方法,并获得特殊的仪器和设施。该项目由MPS OMA(多学科活动办公室)共同支持。

项目成果

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会议论文数量(0)
专利数量(0)

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Leonid Tsybeskov其他文献

Leonid Tsybeskov的其他文献

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{{ truncateString('Leonid Tsybeskov', 18)}}的其他基金

Resonant Energy Transfer Based Electrically Pumped Hybrid Lasers
基于谐振能量转移的电泵浦混合激光器
  • 批准号:
    2221010
  • 财政年份:
    2022
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Continuing Grant
Engineering Silicon/Silicon-Germanium Nanostructure Heterointerfaces: Toward Group IV Light Emitters and Lasers
工程硅/硅-锗纳米结构异质界面:面向 IV 族发光体和激光器
  • 批准号:
    1005682
  • 财政年份:
    2010
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Continuing Grant
Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices
用于新型转移电子器件的硅-锗纳米柱异质结
  • 批准号:
    1027770
  • 财政年份:
    2010
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant
Silicon-germanium quantum well-quantum dot nanostructures for integrated light emitters
用于集成光发射器的硅-锗量子阱量子点纳米结构
  • 批准号:
    0725443
  • 财政年份:
    2007
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of a low-temperature spectroscopic system with a nanometer spatial resolution
MRI:获取具有纳米空间分辨率的低温光谱系统
  • 批准号:
    0521087
  • 财政年份:
    2005
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant
Novel Memory Devices Based on Silicon Nanocrystal Pyramid-Dot Complexes
基于硅纳米晶金字塔点复合物的新型存储器件
  • 批准号:
    0422039
  • 财政年份:
    2004
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Continuing Grant
NER: Efficient Light Emitters Based on Three-Dimensional GeSi Nanostructures
NER:基于三维GeSi纳米结构的高效发光体
  • 批准号:
    0209422
  • 财政年份:
    2002
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant
GOALI: Fabrication and Electronic Properties of Nanocrystalline Silicon Superlattices
目标:纳米晶硅超晶格的制造和电子性能
  • 批准号:
    0296048
  • 财政年份:
    2001
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
美法合作研究:硅量子点电子学
  • 批准号:
    0296059
  • 财政年份:
    2001
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant
U.S.-France Cooperative Research: Silicon Quantum Dot Electronics
美法合作研究:硅量子点电子学
  • 批准号:
    9909264
  • 财政年份:
    2000
  • 资助金额:
    $ 26.06万
  • 项目类别:
    Standard Grant

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