Silicon-Germanium Nanopillar Heterojunctions for Novel Transferred Electron Devices

用于新型转移电子器件的硅-锗纳米柱异质结

• 批准号: 1027770
• 负责人: Leonid Tsybeskov
• 金额: $ 28万
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-15 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1027770&HistoricalAwards=false
• 关键词: Silicon; Germanium; Nanopillar; Heterojunctions; Novel

The objective of this project is to develop novel technology for reproducible growth of composition-controlled axial Si/Ge nanopillar heterojunctions and demonstrate their applications in transfer electron devices.Intellectual merit: (i) optimization of the proposed growth technique for axial Si/Ge nanopillar heterojunctions with controlled composition profiles; (ii) comprehensive characterization of the Si/Ge nanopillar heterojunctions using scanning tunneling microscopy, high-resolution analytical transmission electron microscopy, high spectroscopic resolution photo/electro-luminescence and Raman scattering; (iii) demonstration of a transferred electron device prototype with a high peak-to-valley ratio negative differential resistance at room temperature and oscillation frequencies in a sub-THz/THz domain; (iv) theoretical modeling of electronic transitions at Si/Ge nanopillar hetero-interfaces focused on physical mechanisms of the L-X electron transfer.The broader impacts of this program include comprehensive training of NJIT graduate and undergraduate students in the strategically important areas of semiconductor nanoelectronics and nanotechnology; integration of research and education at undergraduate and graduate level, and further developing of a partnership between New Jersey Institute of Technology, Hewlett Packard Research Laboratories and National Research Council of Canada. An important component of this proposal is public education in nanotechnology and outreach efforts to underrepresented groups in science and technology via lectures, demonstrations, laboratory tours and summer research programs for high-school students and teachers in Newark and New Jersey Metropolitan Area.

本研究的目的是发展一种可重复性生长硅/锗纳米柱异质结的新技术，并展示其在转移电子器件中的应用，其学术价值在于：（i）优化了所提出的硅/锗纳米柱异质结的生长技术，使其具有可控的成分分布;（ii）使用扫描隧道显微镜，高分辨率分析透射电子显微镜，高光谱分辨率光/电致发光和拉曼散射;（iii）演示在室温下具有高峰谷比负微分电阻和亚THz/THz域中振荡频率的转移电子器件原型;（iv）Si/Ge纳米柱异质界面电子跃迁的理论建模，重点是L-X电子转移的物理机制。该计划的更广泛影响包括在半导体纳米电子学和纳米技术的战略重要领域对NJIT研究生和本科生进行全面培训;将本科生和研究生的研究和教育结合起来，进一步发展新泽西理工学院、惠普研究实验室和加拿大国家研究理事会之间的伙伴关系。该提案的一个重要组成部分是纳米技术的公共教育和推广工作，通过讲座，演示，实验室图尔斯和夏季研究计划，高中学生和教师在纽瓦克和新泽西大都会区代表性不足的群体在科学和技术。