SBIR Phase I: A Front-End-of-Line Photoresist Stripping Process for Electronic Device Manufacturing

SBIR 第一阶段：电子设备制造的前端光刻胶剥离工艺

• 批准号: 9960952
• 负责人: David Boyers
• 金额: $ 10万
• 依托单位: Phifer Smith Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960952&HistoricalAwards=false
• 关键词: SBIR; Phase; Front; End; Line

This Small Business Innovation Research Project will be directed toward assessing the performance of a new a front-end-of-line (FEOL) photoresist stripping process for electronic device manufacturing. A Sulfuric acid and oxidant mixture (SOM) continues to be used for stripping photoresist from semiconductor wafers. Recently, several groups of researchers have investigated the use of ozone dissolved in DI water (DIO) for photoresist stripping. The use of ozone dissolved in water in lieu of SOM offers a number of advantages including: 1) decreased chemical disposal cost, 2) decreased rinse DI water consumption, 3) increased user safety, 4) decreased chemical cost.Phifer Smith Corporation has developed a new process which has achieved an etch rate that is two to four times faster than the fastest DIO process. We have defined four goals for phase I: 1) modify our existing wet processing test apparatus, 2) measure the etch rate for positive and negative I-line and DUV photoresist,3) measure the etch rate for positive I-line and positive DUV photoresist ion implanted at dose levels of 1E13, 1E14, and 1E15, 4) develop a preliminary design for a (FEOL) wafer cleaning process for evaluation in phase II.This process can be applied to high-speed photoresist stripping and post ash residue removal. It may also find application in post-etch residue removal for front-end-of-line semiconductor manufacturing processes. Finally, it may also find application in other industries as a residue free, environmentally benign, cleaning process.

该小型企业创新研究项目将直接评估用于电子器件制造的新型前端线（FEOL）光刻胶剥离工艺的性能。硫酸和氧化剂混合物（SOM）继续用于从半导体晶圆上剥离光刻胶。最近，几组研究人员研究了使用溶解在DI水中的臭氧（DIO）来剥离光刻胶。使用溶解在水中的臭氧代替SOM具有许多优点，包括：1)降低化学品处理成本，2)减少漂洗去离子水的消耗，3)提高用户安全性，4)降低化学品成本。菲弗史密斯公司开发了一种新工艺，其蚀刻速度比最快的DIO工艺快两到四倍。我们为第一阶段定义了四个目标：1)修改我们现有的湿处理测试设备，2)测量正、负I线和DUV光刻胶的蚀刻速率，3)测量在1E13、1E14和1E15剂量水平下注入的正I线和正DUV光刻胶离子的蚀刻速率，4)开发（FEOL）晶圆清洗工艺的初步设计，用于第二阶段的评估。该工艺可用于光刻胶的高速剥离和后期灰渣的去除。它也可以在前端半导体制造工艺的蚀刻后残留去除中找到应用。最后，它也可以作为一种无残留、环保的清洁工艺应用于其他行业。