A High Intensity Excimer UV Source for Semiconductor Manufacturing

用于半导体制造的高强度准分子紫外光源

• 批准号: 9361115
• 负责人: David Boyers
• 金额: $ 6.5万
• 依托单位: Adelphi Technology, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1995-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9361115&HistoricalAwards=false
• 关键词: Intensity; Excimer; UV; Source; Semiconductor

9361115 Boyers The objective of this research is to explore the feasibility of developing a high intensity UV excimer source for the demanding requirements of the semiconductor manufacturing and materials processing industry. Emerging processing technologies not requiring a coherent source including UV wafer cleaning and photo CVD will require very high UV intensities over large areas (100mW/cm@) currently only available from excimer lasers. Conventional UV lamps are inadequate for the task. Excimer lasers cannot conveniently illuminate a large field size, are often difficult to integrate into a production tool, and have a very high cost of ownership. The phase I research will be directed toward establishing the feasibility of developing a UV excimer lamp and excitation source with the required performance : 1) A lamp and excitation source will be designed and fabricated. 2) The spectrum and UV efficiency will be measured with pure Xe (172 nm). 3) A preliminary full scale design and cost estimate will be prepared. The Phase II research will be directed toward the construction of a full scale prototype for operation with other excimer gas mixtures such as ArFl*(193 nm), KrCL* (222 nm), KrF* (249 nm), and XeCl* (351 nm). If successful, this program will lead to the development of a critical manufacturing resource for use in the fabrication of the next generation of semiconductor devices. ***

9361115 Boyers-本研究的目的是探索开发高强度紫外准分子源的半导体制造和材料加工行业的苛刻要求的可行性。 不需要相干光源的新兴加工技术（包括紫外线晶片清洁和光化学气相沉积）将需要大面积的非常高的紫外线强度（100 mW/cm@），目前只能通过准分子激光器获得。 传统的紫外线灯不足以完成这项任务。 准分子激光器不能方便地照射大的场尺寸，通常难以集成到生产工具中，并且具有非常高的拥有成本。 第一阶段的研究将致力于建立开发具有所需性能的紫外准分子灯和激发源的可行性：1）设计和制造灯和激发源。 2)光谱和UV效率将用纯的紫外线（172 nm）测量。3)将编制初步的全尺寸设计和成本估算。 第二阶段的研究将致力于建造一个全尺寸的原型，用于使用其他准分子气体混合物，如ArFl*（193 nm），KrCL*（222 nm），KrF*（249 nm）和XeCl*（351 nm）。如果成功，该计划将导致开发用于制造下一代半导体器件的关键制造资源。 ***