SBIR Phase I: High Performance, Environmentally Benign, Surface Cleaning and Copper Passivation Processes for Cu-Interconnect Manufacturing

SBIR 第一阶段：用于铜互连制造的高性能、环保、表面清洁和铜钝化工艺

• 批准号: 0637995
• 负责人: David Boyers
• 金额: --
• 依托单位: Phifer Smith Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637995&HistoricalAwards=false
• 关键词: SBIR; Phase; Performance; Environmentally; Benign

This Small Business Innovation Research Phase I research project will develop a new process technology for cleaning and passivating copper for semiconductor device Cu-interconnect manufacturing. The development of higher performance semiconductor devices with smaller feature sizes has driven the adoption of copper and SiCOH low-k dielectric materials. Corrosion is a leading source of yield loss and device failure. Whereas aluminum readily forms a protective passivating oxide, copper does not. Preliminary data suggests that it is possible to both clean and passivate copper with a single chemistry where corrosion protection is achieved through the selective formation of a thin inorganic passive layer on exposed copper surfaces. The successful completion of this research program will culminate in the development of a critical resource for use in the manufacture of the coming generations of high-density semiconductor devices. This new approach to copper cleaning and passivation has the potential to increase manufacturing productivity and manufacturing yield. This copper passivation process not only can be used in back-end-of-line (interconnect formation steps) in semiconductor device manufacturing, but also may find use in back-end packaging applications, and applications outside of semiconductor device manufacturing. The chemistry used for this cleaning and passivation process offers the additional benefit of being low cost and environmentally benign.

这个小型企业创新研究第一阶段的研究项目将开发一种新的工艺技术，用于清洁和钝化半导体器件铜互连制造的铜。具有更小特征尺寸的更高性能半导体器件的发展已经推动了铜和SiCOH低k电介质材料的采用。腐蚀是产量损失和设备故障的主要来源。铝容易形成保护性钝化氧化物，而铜不能。初步数据表明，它是可能的，既清洁和钝化铜与单一的化学品，其中腐蚀保护是通过选择性地形成一个薄的无机钝化层暴露的铜表面上实现的。这项研究计划的成功完成将最终导致在未来几代高密度半导体器件的制造中使用的关键资源的开发。这种铜清洗和钝化的新方法有可能提高制造生产率和制造产量。此铜钝化工艺不仅可用于半导体装置制造中的后段制程（互连形成步骤），而且可用于后段封装应用及半导体装置制造之外的应用。用于该清洁和钝化过程的化学物质提供了低成本和环境友好的额外益处。