SBIR Phase I: An Ultra-High-Speed Cleaning Process for Electronic Device Manufacturing

SBIR 第一阶段：电子设备制造的超高速清洗工艺

• 批准号: 0338926
• 负责人: David Boyers
• 金额: $ 10万
• 依托单位: Phifer Smith Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0338926&HistoricalAwards=false
• 关键词: SBIR; Phase; Ultra; Speed; Cleaning

This Small Business Innovation Research Phase I project proposes to develop a new "green" ultra-high-speed single-wafer ozone-water-based resist and heavy organic residue removal process for electronic device manufacturing. The drive to smaller feature sizes and larger wafer sizes in next generation device manufacturing has led to the growth in the use of single-wafer wet processing in lieu of batch processing. Initial measurements show that this process can achieve photoresist etch rates (removal rates) in excess of 20,000 Angstroms/ minute. Very high etch rate is critical to the achievement of practical throughputs using single-wafer processing. Initial data and analytical modeling indicates the potential of this process to increase etch rates to even higher levels. Five goals of this project are: 1) measure resist etch rate as a function of temperature; 2) measure the resist etch rate as a function of process chemistry flow rate; 3) evaluate the influence of process chemistry on resist removal; 4) demonstrate process performance using patterned test wafers; and 5) prepare a preliminary design for a process for further evaluation in Phase II.The commercial application of this project will be in the manufacture of high density semiconductor devices. The successful completion of this research program will culminate in the development of the next generation of high density semiconductor devices which will not only increase performance and decrease costs, but will also provide significant environmental benefits through the use of environmentally benign chemicals in lieu of acids and solvents. The market for wafer wet processing equipment alone is projected to reach $3.1 billion by 2005. The ozone-water based process developed in the course of this research can not only be used in semiconductor wafer manufacturing, but also for magnetic disc manufacturing, optical disc manufacturing and flat panel manufacturing.

此小型企业创新研究第一期项目拟开发一种新的“绿色”超高速单晶片臭氧-水基抗蚀剂和重有机残留物去除工艺，用于电子器件制造。在下一代器件制造中，对更小特征尺寸和更大晶片尺寸的驱动已经导致使用单晶片湿法处理代替批处理的增长。初始测量表明，该工艺可实现超过20，000埃/分钟的光致抗蚀剂蚀刻速率（去除速率）。非常高的蚀刻速率对于使用单晶片处理实现实际产量是至关重要的。初始数据和分析模型表明，该工艺有可能将蚀刻速率提高到更高的水平。该项目的五个目标是：1）测量作为温度的函数的抗蚀剂蚀刻速率; 2）测量作为工艺化学品流速的函数的抗蚀剂蚀刻速率; 3）评估工艺化学品对抗蚀剂去除的影响; 4）使用图案化测试晶片展示工艺性能; 5）为第二阶段的进一步评估准备一个工艺的初步设计。该项目的商业应用将是在高密度半导体器件的制造中。该研究计划的成功完成将最终开发出下一代高密度半导体器件，这不仅可以提高性能并降低成本，还将通过使用对环境无害的化学品代替酸来提供显着的环境效益和溶剂。预计到2005年，仅晶片湿法加工设备的市场就将达到31亿美元。本研究所开发之臭氧-水制程不仅可应用于半导体晶圆制造，也可应用于磁碟制造、光碟制造及平板制造。