SBIR Phase II: An Ultra-High-Speed Cleaning Process for Electronic Device Manufacturing
SBIR 第二阶段:电子设备制造的超高速清洗工艺
基本信息
- 批准号:0522329
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-09-01 至 2008-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This Small Business Innovation Research (SBIR) Phase II project will develop process technology for removing photoresist from semiconductor wafers at high speed while not damaging underlying materials. This process technology can be readily integrated into existing single wafer wet processing tools. The development of higher performance semiconductor devices with smaller feature sizes has driven the adoption of copper and low-k dielectric materials that are susceptible to damage by traditional oxygen plasma based resist removal processes. While other low temperature plasma processes are being explored as low damage alternatives, appreciably lower resist removal rates (1,000 to 2,000 A /min) are a significant limitation. In response to this challenge the company successfully developed a new ozone-water based single wafer process chemistry which does not damage low k dielectric materials such as Black Diamond (TM), and does not corrode copper. In phase I this process achieved an etch rate greater than 8,000 A /min. The phase II research will concentrate on the early integration of the process hardware and process technology into a commercial single wafer spin processing system, the further development of process capabilities using 300 mm customer wafers, and the placement of three systems at customer sites for evaluation.Commercially, the successful completion of this research program will culminate in the development of a new single wafer process technology for use in the manufacture of the high-density semiconductor devices with feature sizes below 90 nm. Nearly all of the new manufacturing capacity is built for 300 mm wafer fabrication at the leading edge technology node. In addition to direct sales of $60 to $120 million per year of new wafer processing equipment incorporating this technology, this project will enable the productivity benefits and reduction in unit manufacturing costs provided by the early migration to the next technology node. In addition, the innovative copper compatible cleaning chemistry developed here holds promise for corrosion free cleaning and surface treatment of copper in other electronic device manufacturing applications. Finally, this process uses an environmentally benign "green" chemistry.
该小型企业创新研究(SBIR)第二阶段项目将开发高速去除半导体晶圆上光刻胶的工艺技术,同时不会损坏底层材料。这种工艺技术可以很容易地集成到现有的单晶片湿法加工工具中。具有较小特征尺寸的更高性能半导体器件的发展已经推动了铜和低k电介质材料的采用,这些材料容易受到传统的基于氧等离子体的抗蚀剂去除工艺的损害。虽然正在探索其他低温等离子体工艺作为低损伤替代方案,但明显较低的抗蚀剂去除速率(1,000至2,000 A /min)是一个显著的限制。为了应对这一挑战,该公司成功地开发了一种新的基于臭氧-水的单晶片工艺化学品,该化学品不会损坏诸如Black Diamond(TM)之类的低k电介质材料,也不会腐蚀铜。在第一阶段,该工艺的蚀刻速率超过8,000 A /min。第二阶段的研究将集中于将工艺硬件和工艺技术早期集成到商业单晶片旋转处理系统中,进一步开发使用300 mm客户晶片的工艺能力,并在客户现场放置三个系统进行评估。这项研究计划的成功完成将导致开发一种新的单晶片工艺技术,用于制造特征尺寸低于90纳米的高密度半导体器件。几乎所有新的制造能力都是为300 mm晶圆制造而建立的,处于领先的技术节点。除了每年直接销售6000万至1.2亿美元的采用该技术的新晶圆加工设备外,该项目还将通过早期迁移到下一个技术节点来实现生产率优势和单位制造成本的降低。此外,这里开发的创新铜兼容清洁化学品有望在其他电子设备制造应用中实现铜的无腐蚀清洁和表面处理。最后,该过程使用环境友好的“绿色”化学。
项目成果
期刊论文数量(0)
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科研奖励数量(0)
会议论文数量(0)
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David Boyers其他文献
David Boyers的其他文献
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{{ truncateString('David Boyers', 18)}}的其他基金
SBIR Phase I: High Performance, Environmentally Benign, Surface Cleaning and Copper Passivation Processes for Cu-Interconnect Manufacturing
SBIR 第一阶段:用于铜互连制造的高性能、环保、表面清洁和铜钝化工艺
- 批准号:
0637995 - 财政年份:2007
- 资助金额:
-- - 项目类别:
Standard Grant
SBIR Phase I: An Ultra-High-Speed Cleaning Process for Electronic Device Manufacturing
SBIR 第一阶段:电子设备制造的超高速清洗工艺
- 批准号:
0338926 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Standard Grant
SBIR PHASE I: A Spin-Processing Module for High Speed Ozone-Water Based Resist and Residue Removal
SBIR PHASE I:用于高速臭氧水基抗蚀剂和残留物去除的旋转处理模块
- 批准号:
0320322 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Standard Grant
SBIR Phase I: A Planar Excimer Lamp for Electronic Device Manufacturing
SBIR 第一阶段:用于电子设备制造的平面准分子灯
- 批准号:
0215305 - 财政年份:2002
- 资助金额:
-- - 项目类别:
Standard Grant
SBIR Phase I: A Front-End-of-Line Photoresist Stripping Process for Electronic Device Manufacturing
SBIR 第一阶段:电子设备制造的前端光刻胶剥离工艺
- 批准号:
9960952 - 财政年份:2000
- 资助金额:
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Standard Grant
A High Intensity Excimer UV Source for Semiconductor Manufacturing
用于半导体制造的高强度准分子紫外光源
- 批准号:
9361115 - 财政年份:1994
- 资助金额:
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Standard Grant
High Concentration Ozone Production for Semiconductor Manufacturing
用于半导体制造的高浓度臭氧生产
- 批准号:
9161024 - 财政年份:1992
- 资助金额:
-- - 项目类别:
Standard Grant
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