High Temperature Electronic Devices Based on Polycrystalline Diamond and Cubic Boron Nitride Films

Raj SinghECS-0070004该方案的主要目标是合成和表征适用于高温电子器件制造的高阻(未掺杂)、p和n掺杂聚晶金刚石(PCD)和立方氮化硼(c-BN)薄膜，以及这些薄膜在高温微电子器件制造中的应用/演示。薄膜加工活动有望为在半导体衬底上通过ECR(电子回旋共振)等离子体增强化学气相沉积(ECR-PECVD)合成和原位掺杂金刚石和立方氮化硼(c-BN)薄膜奠定基础。这种加工方法创造了非平衡(激活)的条件，在这种条件下，可以在相对较低的温度和压力下合成新型亚稳材料，如金刚石和c-BN。研究了不同工艺参数(如衬底偏压、等离子体气体成分、衬底温度、气压和等离子体密度)对PCD和c-BN薄膜的成分、晶体质量和性能的影响。为了获得适合于器件制造的高质量薄膜，将特别关注衬底策略、前驱体选择、催化活化和原位掺杂。用红外光谱、拉曼光谱、X射线衍射仪、扫描电子显微镜、透射电子显微镜、原子力显微镜、俄歇电子能谱、SIMS和电子衍射技术对薄膜进行了表征。此外，薄膜的电学性能将由电阻率、载流子浓度和介电测量决定。将研究基于PCD的电气和光学器件，并在有限程度上使用c-BN，并将开发用于生产高温电子元件的制造技术。具体地说，提出了以下两个基本电路：(1)电压倍增堆(VMS)，它需要MSM肖特基二极管与MSM交指电容的集成，以及(2)用于DC-AC转换和驱动电压倍增堆的四个MSM探测器的光桥。在修订后的计划中，大多数器件将使用PCD制造，但制造基于c-BN的器件的范围有限。

Raj SinghECS-0070004The primary objectives of this proposal are to synthesize and characterize thin films of high resistivity (undoped), and p- and n -doped polycrystalline diamond (PCD) and cubic-boron nitride (c-BN) suitable for the fabrication of high temperature electronic devices, and application/demonstration of these films for the fabrication of high temperature microelectronic devices.The thin film processing activities is expected to develop a fundamental understanding for synthesizing and in situ doping of diamond and cubic-boron nitride (c-BN) films predictably and reproducibly by ECR (Electron Cyclotron Resonance) plasma enhanced chemical vapor deposition (ECR-PECVD) on semiconducting substrates. This way of processing creates non-equilibrium (activated) conditions in which novel metastable materials like diamond and c-BN can be synthesized at relatively low temperatures and pressures. The influence of different process parameters (e.g. substrate bias, plasma gas composition, substrate temperature, pressure, and plasma density) on the composition, crystal quality, and properties of the PCD and c-BN films will be studied. Special attention will be given to substrate strategy, precursor selection, catalytic activation, and in situ doping, in order to obtain high quality films suitable for device fabrication. The films will be characterized by IR and Raman Spectroscopy, XRD, SEM, TEM, AFM, AES/XPS, SIMS and Electron Diffraction techniques. In addition, electrical properties of the films will be determined by resistivity, carrier concentration, and dielectric measurements. Both electrical and optical devices based on the PCD , and to the limited extent using c-BN, will be investigated and fabrication techniques will be developed for the production of high-temperature electronic components. In particular, the following two basic circuits are proposed for investigation: (1) a voltage multiplier stack (VMS) which requires the integration of MSM Schottky diodes with MSM interdigitated capacitors, and (2) an optical bridge of four MSM detectors for DC-to-AC conversion and for driving the voltage multiplier stacks. Most of the devices will be fabricated using PCD with a limited scope for fabricating c-BN based devices in the revised program.