Modeling and Simulation for Epitaxial Growth

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0074152CaflischThis project will apply mathematical modeling and computational simulation to epitaxial growth of thin films, in particular semiconductor materials grown by MBE (molecular beam epitaxy). The research topics are characterized by complex geometry and a hierarchy of length scales, requiring significantly new mathematical and numerical approaches. Specific topics include strain in thin films, accelerated numerical methods, coarse-graining and the dynamics of interacting defect lines.This project will apply mathematical modeling and computational simulation to material science, in particular to semiconductor materials grown by MBE (molecular beam epitaxy). Although MBE is just one of many possible growth techniques, it is the growth method for many of the most demanding applications, such as high-performance, low-power systems for wireless communications. Modeling and simulation are not generally well developed for MBE growth, and current computational methods are not sufficient to address many of the important problems of epitaxy. The goal is to develop new mathematical models and computational methods that will significantly advance the state of the art. This project is multi-disciplinary, involving mathematics (both applied and core) and materials science, as well as participation from both industry and university. The distinguishing feature of this collaboration is that it combines expertise in modeling, simulation and experimentation in one cohesive group.