Mathematical Sciences: VIP/Virtual Integrated Prototyping for Epitaxial Growth

分子束外延的模型和实验研究的模拟，使用原位诊断（RHEED和PEO）和非原位显微镜（STM），将被用来确定应变，通量率和温度对表面形态的影响。 不同层次的建模、层次间联系的分析和实验验证对于确定基本的 增长方式及其增长率。 最后，我们将开发一种控制方法的基础上，一个新的连续模型（“岛动力学模型”），使用原位诊断（RHEED）信号作为测量变量和通量率和温度作为控制变量。 这个项目的一个重要的一般结果将是一种方法，可以遵循广泛的一类薄膜生长问题。 特别是，对于分子束外延，我们将确定控制纳米级形态所需的仪器灵敏度。该项目的具体产品将包括一套能够提供生长配方参数的计算工具，以及AlSb/InAs原型系统的实时控制算法。 这项活动的资金将由数学科学部、MPS多学科活动办公室、NSF工程理事会和DARPA提供。

Simulation of the models and experimental studies of MBE, using in situ diagnostics (RHEED and PEO) and ex situ microscopy (STM), will be used to determine the effects of strain, flux rates and temperature on surface morphology. Modeling at different levels, analysis of the connections between levels, and experimental validation are important for determination of the essential growth modes and their rates. Finally we will develop a control method based on a new continuum model (the "island dynamics model"), using the in situ diagnostic (RHEED) signal as the measurement variables and flux rates and temperature as control variables. An important general result of this project will be a methodology that can be followed for a wide class of thin film growth problems. In particular, for MBE we will determine the instrumentation sensitivity required for control of nanoscale morphology. Specific products of this project will include a set of computational tools capable of providing parameters for a growth recipe, and a real-time control algorithm for the AlSb/InAs prototype system. Funding for this activity will be provided by the Division of Mathematical Sciences, the MPS Office of Multidisciplinary Activities, the NSF Engineering Directorate, and by DARPA.