Mathematical Sciences: VIP/Virtual Integrated Prototyping for Epitaxial Growth

模拟MBE的模型和实验研究，使用原位诊断（RHEED和PEO）和非原位显微镜（STM），将用于确定应变，通量率和温度对表面形貌的影响。不同层次的建模、层次之间联系的分析和实验验证对于确定基本生长模式及其速率是重要的。最后，我们将开发一种基于新的连续体模型（“岛屿动力学模型”）的控制方法，以原位诊断（RHEED）信号为测量变量，以通量和温度为控制变量。这个项目的一个重要的一般结果将是一个方法，可以遵循广泛的薄膜生长问题。特别是，对于MBE，我们将确定控制纳米级形貌所需的仪器灵敏度。该项目的具体产品将包括一套能够为生长配方提供参数的计算工具，以及用于AlSb/InAs原型系统的实时控制算法。该活动的资金将由数学科学部、MPS多学科活动办公室、NSF工程局和DARPA提供。

Simulation of the models and experimental studies of MBE, using in situ diagnostics (RHEED and PEO) and ex situ microscopy (STM), will be used to determine the effects of strain, flux rates and temperature on surface morphology. Modeling at different levels, analysis of the connections between levels, and experimental validation are important for determination of the essential growth modes and their rates. Finally we will develop a control method based on a new continuum model (the "island dynamics model"), using the in situ diagnostic (RHEED) signal as the measurement variables and flux rates and temperature as control variables. An important general result of this project will be a methodology that can be followed for a wide class of thin film growth problems. In particular, for MBE we will determine the instrumentation sensitivity required for control of nanoscale morphology. Specific products of this project will include a set of computational tools capable of providing parameters for a growth recipe, and a real-time control algorithm for the AlSb/InAs prototype system. Funding for this activity will be provided by the Division of Mathematical Sciences, the MPS Office of Multidisciplinary Activities, the NSF Engineering Directorate, and by DARPA.