CAREER: Systematic Multiscale Modeling of Directed Assembly in Semiconductor Materials Processing
职业:半导体材料加工中定向组装的系统多尺度建模
基本信息
- 批准号:0134418
- 负责人:
- 金额:$ 37.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-03-01 至 2007-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AbstractProposal Number: CTS-0134418Principal Investigator: Talid SinnoAffiliation: University of PennsylvaniaProposal Title: CAREER: Systematic Multiscale Modeling of Directed Assembly in Semiconductor Materials ProcessingThe PI proposes to develop a synergistic modeling framework, from continuum level through atomistic simulation, to improve the understanding of diffusion reaction, and species aggregation during electronic materials processing. The creation of novel structures at length scales smaller than those available from traditional top-down fabrication methods requires a detailed atomistic understanding of the physics and chemistry governing multicomponent processes. This understanding must be linked also to macroscopic scale process operating conditions. Potential application areas that can benefit from such a paradigm include atomistic scale control of bulk dopant and defect distribution in silicon microelectronics, defect control in other electronic materials such as SiC, SiGe, and GaAs, and controlled deposition of multilayered structures for advanced optoelectronic materials. A close coupling of the analytical framework against available experimental results will be included in the research program. A primary goal of the educational component of the project will be to introduce electronic materials processing into the curriculum choices for chemical engineering majors, particularly at the University of Pennsylvania, to increase the number of those graduates who move into this important industry.
建议编号:CTS-0134418主要研究人员:Talid SInnoship附属公司:宾夕法尼亚大学建议:Career:半导体材料加工中定向组装的系统多尺度建模PI建议开发一个从连续层到原子模拟的协同建模框架,以提高对电子材料加工过程中的扩散反应和物种聚集的理解。要创造出比传统自上而下制造方法更小的长度尺度的新结构,需要对支配多组分工艺的物理和化学有详细的原子理解。这一理解还必须与宏观规模的工艺操作条件相联系。潜在的应用领域包括硅微电子中的体掺杂和缺陷分布的原子规模控制,其他电子材料中的缺陷控制,以及先进光电材料的多层结构的控制沉积。分析框架与现有实验结果的紧密结合将包括在研究计划中。该项目教育部分的一个主要目标是将电子材料处理引入化学工程专业的课程选择中,特别是在宾夕法尼亚大学,以增加进入这个重要行业的毕业生数量。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Talid Sinno其他文献
Configurational entropy significantly influences point defect thermodynamics and diffusion in crystalline silicon
构型熵显着影响晶体硅中的点缺陷热力学和扩散
- DOI:
10.1103/physrevmaterials.6.064603 - 发表时间:
2022 - 期刊:
- 影响因子:3.4
- 作者:
Jinping Luo;Chenyang Zhou;Yunjie Cheng;Qihang Li;Lijun Liu;Jack F. Douglas;Talid Sinno - 通讯作者:
Talid Sinno
Talid Sinno的其他文献
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{{ truncateString('Talid Sinno', 18)}}的其他基金
Collaborative Research: Atomic Displacement Engineering of Post-epitaxial Thin-films (ADEPT)
合作研究:外延后薄膜原子位移工程(ADEPT)
- 批准号:
1808065 - 财政年份:2018
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
CDS&E: Collaborative Research: Data-Driven Predictive Modeling of Flows Containing Aggregating Particles
CDS
- 批准号:
1404826 - 财政年份:2014
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
Collaborative Research: Large-Scale Patterning of Germanium Quantum Dots by Stress Transfer
合作研究:通过应力传递实现锗量子点的大规模图案化
- 批准号:
1068841 - 财政年份:2011
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
Collaborative Proposal: Low-Cost Substrates for III-V Photovoltaics by Self-Templated Selective Epitaxial Growth of Germanium on Silicon
合作提案:通过硅上锗的自模板选择性外延生长实现低成本 III-V 光伏衬底
- 批准号:
0907365 - 财政年份:2009
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
Rational Self-Assembly of Ordered Nanoparticle Composites using DNA Interactions
利用 DNA 相互作用合理自组装有序纳米粒子复合材料
- 批准号:
0829045 - 财政年份:2008
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
Multiscale Modeling, Optimization, and Control of Microstructural Evolution
微观结构演化的多尺度建模、优化和控制
- 批准号:
0730971 - 财政年份:2007
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
NIRT: Directed Assembly of Nanostructures: Theory, Simulations, and Experiments in Hard and Soft Materials
NIRT:纳米结构的定向组装:硬材料和软材料的理论、模拟和实验
- 批准号:
0404259 - 财政年份:2004
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
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