SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material

一种新型的纳米器件——由纳米晶硅（nano-Si）组成的双极薄膜晶体管（B-TFT）——将被研究。这种器件为未来低温衬底上的纳米电子和光电子器件和电路打开了机会之窗。我们计划通过以下步骤进行这项研究：1)设计新的晶体管和制造工艺，2)研究先进的低温PECVD工艺用于B-TFT的本征型，p型和n型纳米si薄膜，以及3)制造和表征完整的纳米si B-TFT。最高工艺温度为250℃，我们将从纳米硅性能的变化方面探讨B-TFT的性能限制因素。该项目将包括PI，一名研究生和一名本科生。参与的学生将有机会接触到纳米硅材料、低温晶体管工艺和半导体表征等跨学科的教育机会。

A novel nano-device-a bipolar thin-film transistor (B-TFT) that is composed of nanocrystalline silicon (nano-Si)-will be investigated. This kind of device could open windows of opportunity for future nano-electronic and -optoelectronic devices and circuits on low-temperature substrates. We plan to carry out this research through the following steps: 1) to design the new transistor and fabrication processes, 2) to investigate advanced low-temperature PECVD processes for intrinsic, p-, and n-type nano-Si films for B-TFT, and 3) to fabricate and to characterize the complete nano-Si B-TFTs. The highest process temperature will be 250 C. We will explore the performance-limiting factors of B-TFT with respect to variations of the nano-Si properties. This project will include the PI, one graduate student, and one undergraduate student. Participating students will be exposed to interdisciplinary educational opportunity in nano-Si materials, low temperature transistor processes, and semiconductor characterization.