SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material

一种新型的纳米器件-双极薄膜晶体管（B-TFT），它是由纳米硅（nano-Si）-将被研究。这种器件可以为未来在低温衬底上的纳米电子和光电子器件和电路打开机会之窗。我们计划通过以下步骤进行这项研究：1）设计新的晶体管和制造工艺，2）研究用于B-TFT的本征、p型和n型纳米Si膜的先进低温PECVD工艺，以及3）制造和表征完整的纳米Si B-TFT。最高工艺温度为250 ℃。我们将探讨B-TFT的性能限制因素与纳米硅性能的变化。这个项目将包括PI，一名研究生和一名本科生。参与的学生将接触到纳米硅材料，低温晶体管工艺和半导体表征的跨学科教育机会。

A novel nano-device-a bipolar thin-film transistor (B-TFT) that is composed of nanocrystalline silicon (nano-Si)-will be investigated. This kind of device could open windows of opportunity for future nano-electronic and -optoelectronic devices and circuits on low-temperature substrates. We plan to carry out this research through the following steps: 1) to design the new transistor and fabrication processes, 2) to investigate advanced low-temperature PECVD processes for intrinsic, p-, and n-type nano-Si films for B-TFT, and 3) to fabricate and to characterize the complete nano-Si B-TFTs. The highest process temperature will be 250 C. We will explore the performance-limiting factors of B-TFT with respect to variations of the nano-Si properties. This project will include the PI, one graduate student, and one undergraduate student. Participating students will be exposed to interdisciplinary educational opportunity in nano-Si materials, low temperature transistor processes, and semiconductor characterization.