SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material

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A novel nano-device-a bipolar thin-film transistor (B-TFT) that is composed of nanocrystalline silicon (nano-Si)-will be investigated. This kind of device could open windows of opportunity for future nano-electronic and -optoelectronic devices and circuits on low-temperature substrates. We plan to carry out this research through the following steps: 1) to design the new transistor and fabrication processes, 2) to investigate advanced low-temperature PECVD processes for intrinsic, p-, and n-type nano-Si films for B-TFT, and 3) to fabricate and to characterize the complete nano-Si B-TFTs. The highest process temperature will be 250 C. We will explore the performance-limiting factors of B-TFT with respect to variations of the nano-Si properties. This project will include the PI, one graduate student, and one undergraduate student. Participating students will be exposed to interdisciplinary educational opportunity in nano-Si materials, low temperature transistor processes, and semiconductor characterization.