Collaborative Research: Defects Driven Reliability Modeling and Stress Burn-in Optimization in Nanoelectronics Manufacturing
Collaborative Research: Defects Driven Reliability Modeling and Stress Burn-in Optimization in Nanoelectronics Manufacturing
批准号:
1633580
负责人:
Yue Kuo
金额:
$24.27万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-09-01 至 2020-08-31
中文摘要
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英文摘要
Yield and reliability are critical factors in determining the success of nanoelectronics manufacturing. They are traditionally evaluated separately based on different sources of information. Yield is generally estimated based on process control data such as measurements of manufacturing defects; while reliability prediction generally relies on lifetime data obtained from reliability tests. It is difficult to implement an end-of-line reliability assessment approach at early stages of a product's life cycle when data are limited. If successful, this award will enable a unified framework for managing yield, reliability, and stress burn-in in nanoelectronics manufacturing using process-control data. In addition, the integrated research and education plan associated with this award will provide interdisciplinary education and research opportunities for students from the underrepresented and impoverished Appalachian Ohio area and promote STEM education through K-12 outreach activities. This award focuses on yield and reliability of nanoelectronics products via spatiotemporal modeling of defects. The spatial modeling and temporal modeling of defects refer to modeling of the spatial distribution of defects and modeling of the growth of defects with time when devices are subject to stresses, respectively. A multidisciplinary team consisting of two PIs with expertise in nanoelectronics manufacturing and reliability engineering, respectively, is formed. Systematic accelerated destructive degradation tests followed by detailed physics-of-failure analysis will be conducted to explore failure mechanisms and to derive physics-based random defect-growth models. New yield models will be built based on the knowledge of defect size distribution and spatial distribution of defects. New reliability models will be suggested based on the defect-growth mechanisms and models. The reliability models will lead to new burn-in procedures. Ultra-narrow copper interconnect lines with sub 100 nanometers width prepared from a plasma-based etch process will be used as the testbed for the methodology.
期刊论文(5)
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DOI:
10.1557/adv.2020.310
发表时间:
2020
期刊:
MRS Advances
影响因子:
0.8
作者:
[J. Su, Y. Kuo]
通讯作者:
Y. Kuo
Electromigration Study of Plasma Etched Copper Lines with Copper Oxide Capping Layers
具有氧化铜覆盖层的等离子蚀刻铜线的电迁移研究
DOI:
10.1149/09703.0051ecst
发表时间:
2020
期刊:
ECS Transactions
影响因子:
--
作者:
[Su, Jia Quan, Kuo, Yue]
通讯作者:
Kuo, Yue
A Differential Burn-in Policy Considering Nonhomogeneous Distribution of Spatial Defects in Semiconductor Manufacturing
考虑半导体制造中空间缺陷非均匀分布的差分老化策略
DOI:
10.1109/aparm49247.2020.9209427
发表时间:
2020
期刊:
2020 Asia-Pacific International Symposium on Advanced Reliability and Maintenance Modeling (APARM
影响因子:
--
作者:
[Yuan, Tao, Chen, Yuan, Kuo, Yue]
通讯作者:
Kuo, Yue
Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines
金属覆盖层对等离子蚀刻铜线电迁移失效现象的影响
DOI:
10.1149/2162-8777/abbb71
发表时间:
2020
期刊:
ECS Journal of Solid State Science and Technology
影响因子:
2.2
作者:
[Su, Jia Quan, Li, Mingqian, Kuo, Yue]
通讯作者:
Kuo, Yue
Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines
氧化铜钝化对等离子蚀刻铜线电迁移寿命的影响
DOI:
10.1149/09803.0099ecst
发表时间:
2020
期刊:
ECS transactions
影响因子:
--
作者:
[Su, Jia Quan, Kuo, Yue]
通讯作者:
Kuo, Yue
A Novel Fabrication Process for Polysilicon Thin Film Solar Cells
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批准号:0968862
-
项目类别:Standard Grant
-
资助金额:$37.09万
-
财政年份:2010
-
负责人:Yue Kuo
-
依托单位:
Collaborative Research: Nonparametric Bayesian Modeling of Reliability of Nanoelectronics
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批准号:0926379
-
项目类别:Standard Grant
-
资助金额:$20.62万
-
财政年份:2009
-
负责人:Yue Kuo
-
依托单位:
Collaborative Research: Modeling Reliability for Scale-Driven Degradation and Spatial Defects
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批准号:0654172
-
项目类别:Standard Grant
-
资助金额:$15.74万
-
财政年份:2007
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring the nano structural properties of the 2 nm interface layer of the metal oxide and its nano device characteristics
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批准号:0403280
-
项目类别:Standard Grant
-
资助金额:$10.0万
-
财政年份:2004
-
负责人:Yue Kuo
-
依托单位:
SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material
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批准号:0236835
-
项目类别:Standard Grant
-
资助金额:$6.99万
-
财政年份:2003
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring a Nanoscale Amorphous Silicon Thin Film Transistor
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批准号:0301960
-
项目类别:Standard Grant
-
资助金额:$8.0万
-
财政年份:2003
-
负责人:Yue Kuo
-
依托单位:
SGER: Identifying and Characterizing Reliability Properties for a Sub 5 nm High k Dielectric Device
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批准号:0243409
-
项目类别:Standard Grant
-
资助金额:$9.71万
-
财政年份:2003
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring A Novel Plasma-Based Copper Nano-Line Etch Method for Nano-Devices And Circuits
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批准号:0103022
-
项目类别:Standard Grant
-
资助金额:$8.12万
-
财政年份:2001
-
负责人:Yue Kuo
-
依托单位:
Acquisition of a Multi-Purpose, Multi-User Mask Aligner
-
批准号:9912490
-
项目类别:Standard Grant
-
资助金额:$7.84万
-
财政年份:2000
-
负责人:Yue Kuo
-
依托单位:
Amorophous Silicon-Based Thin Film Diodes
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批准号:0000806
-
项目类别:Fellowship Award
-
资助金额:$4.08万
-
财政年份:2000
-
负责人:Yue Kuo
-
依托单位:
国内基金
海外基金
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