Collaborative Research: Nonparametric Bayesian Modeling of Reliability of Nanoelectronics

合作研究:纳米电子可靠性的非参数贝叶斯建模

基本信息

  • 批准号:
    0926379
  • 负责人:
  • 金额:
    $ 20.62万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-09-01 至 2013-08-31
  • 项目状态:
    已结题

项目摘要

This grant provides funding for the investigation of reliability in nanoelectronics. Nanoelectronics is a driving force for strong economic growth in the United States. Reliability is recognized as one of the most critical factors in determining the success of nano fabrication and manufacturing. This collaborative project will be led by a nano device engineer and a reliability specialist. The objective of this interdisciplinary research is to investigate effective and practical nonparametric Bayesian methods to assess the reliability of nanoelectronic products during the early design and development stages. Specially, the proposed research tasks consist of two closely-related components: (i) an analytical study to develop practical nonparametric Bayesian methods for estimating important reliability measures of nanoelectronic devices, and (ii) an experimental study to validate the models by fabricating and characterizing newly developed nonvolatile memories based on nanocrystals embedded high-k thin films. Upon the successful completion of this project, new methods and tools that are critical to design and manufacture reliable nanoelectronic products will be developed. This will be the first systematic study in modeling and predicting reliability of nano products based on experimental data and nonparametric Bayesian methods which offer great flexibility and capability to address challenges in real products influencing yield and cost. The result will enable manufacturers to assess reliability of new nano products and involved costs in the early design and development stages, which would expedite products to the market. Furthermore, the new nonvolatile memory devices have practical applications in future generation integrated circuits (ICs) and data storage. This multidisciplinary research project will provides students with both theoretical and experimental education in reliability, semiconductor devices, thin film materials, and high-tech fabrication processes.
该赠款为纳米电子学的可靠性研究提供资金。纳米电子学是美国经济强劲增长的推动力。可靠性被认为是决定纳米制造和制造成功的最关键因素之一。该合作项目将由一名纳米器件工程师和一名可靠性专家领导。这项跨学科研究的目的是探讨有效和实用的非参数贝叶斯方法,以评估在早期设计和开发阶段的纳米电子产品的可靠性。特别是,拟议的研究任务包括两个密切相关的组件:(i)的分析研究,以开发实用的非参数贝叶斯方法估计重要的可靠性措施的纳米电子器件,和(ii)的实验研究,以验证模型的制造和表征新开发的非易失性存储器的基础上,纳米晶体嵌入高k薄膜。该项目成功完成后,将开发出对设计和制造可靠的纳米电子产品至关重要的新方法和工具。这将是第一个系统的研究,在纳米产品的可靠性建模和预测的基础上,实验数据和非参数贝叶斯方法,提供了很大的灵活性和能力,以解决在真实的产品影响产量和成本的挑战。研究结果将使制造商能够在早期设计和开发阶段评估新纳米产品的可靠性和所涉成本,这将加快产品推向市场。此外,新的非易失性存储器器件在下一代集成电路(IC)和数据存储中具有实际应用。这个多学科的研究项目将为学生提供可靠性,半导体器件,薄膜材料和高科技制造工艺的理论和实验教育。

项目成果

期刊论文数量(0)
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Yue Kuo其他文献

High-performance organic–inorganic hybrid optocouplers based on organic light-emitting diodes and a-Si: H photodiodes.
基于有机发光二极管和 a-Si:H 光电二极管的高性能有机-无机混合光耦合器。
  • DOI:
    10.1016/j.sna.2015.11.004
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Dong Li;Kibum Kim;Shumao Zhang;Guifang Dong;Yue Kuo
  • 通讯作者:
    Yue Kuo
Dielectric relaxation and breakdown detection of doped tantalum oxide high-k thin films
掺杂氧化钽高k薄膜的介电弛豫和击穿检测
Advanced Flat-Panel Displays and Materials
  • DOI:
    10.1557/mrs2002.273
  • 发表时间:
    2011-01-31
  • 期刊:
  • 影响因子:
    4.900
  • 作者:
    Yue Kuo;Kouji Suzuki
  • 通讯作者:
    Kouji Suzuki
Thin Film Transistor Array Based Active Matrix Flat Panel Displays—Past and Next Application in Immersive Displays
High-performance organic–inorganic hybrid optocouplers based on organic light-emitting diodes and a-Si: H photodiodes.
  • DOI:
    doi:10.1016/j.sna.2015.11.004
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
  • 作者:
    Dong Li;Kibum Kim;Shumao Zhang;Guifang Dong;Yue Kuo
  • 通讯作者:
    Yue Kuo

Yue Kuo的其他文献

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{{ truncateString('Yue Kuo', 18)}}的其他基金

Collaborative Research: Defects Driven Reliability Modeling and Stress Burn-in Optimization in Nanoelectronics Manufacturing
合作研究:纳米电子制造中缺陷驱动的可靠性建模和应力老化优化
  • 批准号:
    1633580
  • 财政年份:
    2016
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
A Novel Fabrication Process for Polysilicon Thin Film Solar Cells
多晶硅薄膜太阳能电池的新型制造工艺
  • 批准号:
    0968862
  • 财政年份:
    2010
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
Collaborative Research: Modeling Reliability for Scale-Driven Degradation and Spatial Defects
合作研究:规模驱动的退化和空间缺陷的可靠性建模
  • 批准号:
    0654172
  • 财政年份:
    2007
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
NER: Exploring the nano structural properties of the 2 nm interface layer of the metal oxide and its nano device characteristics
NER:探索金属氧化物2 nm界面层的纳米结构特性及其纳米器件特性
  • 批准号:
    0403280
  • 财政年份:
    2004
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material
SGER:探索纳米晶硅材料的新型双极薄膜晶体管
  • 批准号:
    0236835
  • 财政年份:
    2003
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
NER: Exploring a Nanoscale Amorphous Silicon Thin Film Transistor
NER:探索纳米级非晶硅薄膜晶体管
  • 批准号:
    0301960
  • 财政年份:
    2003
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
SGER: Identifying and Characterizing Reliability Properties for a Sub 5 nm High k Dielectric Device
SGER:识别和表征亚 5 nm 高 k 电介质器件的可靠性特性
  • 批准号:
    0243409
  • 财政年份:
    2003
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
NER: Exploring A Novel Plasma-Based Copper Nano-Line Etch Method for Nano-Devices And Circuits
NER:探索一种用于纳米器件和电路的新型等离子体铜纳米线蚀刻方法
  • 批准号:
    0103022
  • 财政年份:
    2001
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
Acquisition of a Multi-Purpose, Multi-User Mask Aligner
购买多用途、多用户掩模对准器
  • 批准号:
    9912490
  • 财政年份:
    2000
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Standard Grant
Amorophous Silicon-Based Thin Film Diodes
非晶硅基薄膜二极管
  • 批准号:
    0000806
  • 财政年份:
    2000
  • 资助金额:
    $ 20.62万
  • 项目类别:
    Fellowship Award

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