SGER: Identifying and Characterizing Reliability Properties for a Sub 5 nm High k Dielectric Device
SGER: Identifying and Characterizing Reliability Properties for a Sub 5 nm High k Dielectric Device
批准号:
0243409
负责人:
Yue Kuo
金额:
$9.71万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-02-01 至 2004-07-31
中文摘要
这项探索性研究(SGER)试点研究的目的是:1)确定新设计和制造的高k介电纳米器件的失效模式和失效机制;2)分析和表征可用于贝叶斯分析的早期失效模式。本研究的目的是利用失效模式识别为新设计的纳米产品(由Co-PI制造)的可靠性分析和验证奠定基础。破坏机制和其他物理性质对高婴儿死亡率和低产量有重要影响。由于可用于可靠性测试的样品数量少,产品价格昂贵,因此不可避免地要使用贝叶斯分析。这项研究的目的是确定确切的信息提取这样的分析。这项工作的最终结果将导致一个全面的项目,用于开发一个理论模型,以桥接纳米产品的可靠性和产量关系。这个多学科项目将严格探索新发明的纳米产品的可靠性应用。该项目将为学术界建立纳米可靠性模型提供理论基础。该项目将对社会产生重大影响,因为它是第一个在新制造的纳米器件的设计阶段解决可靠性问题的探索性研究。
英文摘要
The objectives of this Small Grant for Exploratory Research (SGER) pilot study are: 1) to identify the failure modes and the failure mechanisms of newly designed and fabricated high k dielectric nano devices, and 2) to analyze and characterize the early failure pattern that can be used in a Bayesian analysis. The goal of the study is to use failure mode identification to set the foundation for reliability analysis and validation in newly designed nano products (being fabricated by the Co-PI). Failure mechanisms and other physical properties have a significant bearing on high infant mortality and low yield. Because the sample quantity available for reliability testing is small and the products are expensive, it is inevitable that Bayesian analysis will have to be used. This study intends to determine exactly what information to extract for such an analysis. The end result of the work will lead to a full-scale project for developing a theoretical model to bridge the reliability and yield relationship for nano products.This multidisciplinary project will rigorously explore reliability applications in a newly invented nano product. The project will bring to the academic community a theoretical foundation for modeling nano reliability. This project will have major impact on society because it is the first exploratory study to address the reliability issue at the design stage in newly fabricated nano devices.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Defects Driven Reliability Modeling and Stress Burn-in Optimization in Nanoelectronics Manufacturing
-
批准号:1633580
-
项目类别:Standard Grant
-
资助金额:$24.27万
-
财政年份:2016
-
负责人:Yue Kuo
-
依托单位:
A Novel Fabrication Process for Polysilicon Thin Film Solar Cells
-
批准号:0968862
-
项目类别:Standard Grant
-
资助金额:$37.09万
-
财政年份:2010
-
负责人:Yue Kuo
-
依托单位:
Collaborative Research: Nonparametric Bayesian Modeling of Reliability of Nanoelectronics
-
批准号:0926379
-
项目类别:Standard Grant
-
资助金额:$20.62万
-
财政年份:2009
-
负责人:Yue Kuo
-
依托单位:
Collaborative Research: Modeling Reliability for Scale-Driven Degradation and Spatial Defects
-
批准号:0654172
-
项目类别:Standard Grant
-
资助金额:$15.74万
-
财政年份:2007
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring the nano structural properties of the 2 nm interface layer of the metal oxide and its nano device characteristics
-
批准号:0403280
-
项目类别:Standard Grant
-
资助金额:$10.0万
-
财政年份:2004
-
负责人:Yue Kuo
-
依托单位:
SGER: Exploring A Novel Bipolar Thin-Film Transistor of Nanocrystalline Silicon Material
-
批准号:0236835
-
项目类别:Standard Grant
-
资助金额:$6.99万
-
财政年份:2003
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring a Nanoscale Amorphous Silicon Thin Film Transistor
-
批准号:0301960
-
项目类别:Standard Grant
-
资助金额:$8.0万
-
财政年份:2003
-
负责人:Yue Kuo
-
依托单位:
NER: Exploring A Novel Plasma-Based Copper Nano-Line Etch Method for Nano-Devices And Circuits
-
批准号:0103022
-
项目类别:Standard Grant
-
资助金额:$8.12万
-
财政年份:2001
-
负责人:Yue Kuo
-
依托单位:
Acquisition of a Multi-Purpose, Multi-User Mask Aligner
-
批准号:9912490
-
项目类别:Standard Grant
-
资助金额:$7.84万
-
财政年份:2000
-
负责人:Yue Kuo
-
依托单位:
Amorophous Silicon-Based Thin Film Diodes
-
批准号:0000806
-
项目类别:Fellowship Award
-
资助金额:$4.08万
-
财政年份:2000
-
负责人:Yue Kuo
-
依托单位:
海外基金