Surface Chemical Functionalization of Technologically Important Semiconductors: Silicon, Germanium, and Silicon Carbide

Chabal/Rutgers在分析和表面化学项目的支持下，Rutgers大学表面改性实验室的Chabal教授和他的同事正在研究硅、锗和碳化硅的详细表面化学。 正在进行氧化、氮化、氯化、有机官能团的附着和金属化的研究。 高分辨率红外光谱加上改性表面的结构和电子性质的理论研究提供了对这些重要过程的基本理解。 这项工作的结果直接适用于半导体工艺化学的发展，新的纳米材料合成方法的理解，以及生物传感器器件的开发。了解氧、氮、卤素和碳氢化合物与半导体表面的反应对于开发电子和光电器件的加工方法至关重要。 基本的结构和动力学信息需要获得这种理解。 使用红外光谱和电子结构计算，这些反应的基本机制正在研究硅，锗和碳化硅表面。 本科生和研究生正在接受基础表面科学的培训，这对这些技术至关重要。

AbstractCHE-0415652Chabal/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Chabal and his colleagues in the Laboratory for Surface Modification at Rutgers University are examining the detailed surface chemistry of silicon, germanium, and silicon carbide. Studies of oxidation, nitridation, chlorination, attachment of organic functionalities, and metallization are being carried out. High resolution infrared spectroscopy coupled with theoretical studies of the structure and electronic properties of the modified surfaces provides the fundamental understanding of these important processes. The results of this work are directly applicable to the development of semiconductor process chemistry, the understanding of new nanomaterials synthesis methods, and the development of biological sensor devices. An understanding of the reactions of oxygen, nitrogen, halogens, and hydrocarbons with semiconductor surfaces is essential to the development of electronic and optoelectronic device processing methods. Fundamental structural and kinetic information is needed to obtain this understanding. Using infrared spectroscopy and electronic structure calculations, the fundamental mechanisms of these reactions are being examined on silicon, germanium, and silicon carbide surfaces. Undergraduate and graduate students are being trained in the fundamental surface science that is crucial to these technologies.