Surface Chemical Functionalization of Technologically Important Semiconductors: Silicon, Germanium, and Silicon Carbide

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AbstractCHE-0415652Chabal/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Chabal and his colleagues in the Laboratory for Surface Modification at Rutgers University are examining the detailed surface chemistry of silicon, germanium, and silicon carbide. Studies of oxidation, nitridation, chlorination, attachment of organic functionalities, and metallization are being carried out. High resolution infrared spectroscopy coupled with theoretical studies of the structure and electronic properties of the modified surfaces provides the fundamental understanding of these important processes. The results of this work are directly applicable to the development of semiconductor process chemistry, the understanding of new nanomaterials synthesis methods, and the development of biological sensor devices. An understanding of the reactions of oxygen, nitrogen, halogens, and hydrocarbons with semiconductor surfaces is essential to the development of electronic and optoelectronic device processing methods. Fundamental structural and kinetic information is needed to obtain this understanding. Using infrared spectroscopy and electronic structure calculations, the fundamental mechanisms of these reactions are being examined on silicon, germanium, and silicon carbide surfaces. Undergraduate and graduate students are being trained in the fundamental surface science that is crucial to these technologies.