Surface Chemical Functionalization of Technologically Important Semiconductors: Silicon, Germanium, and Silicon Carbide

在分析和表面化学计划的支持下，罗格斯大学表面修饰实验室的Chabal教授和他的同事们正在研究硅、锗和碳化硅的详细表面化学。氧化、氮化、氯化、有机官能团连接和金属化的研究正在进行中。高分辨率红外光谱结合对改性表面的结构和电子性质的理论研究，提供了对这些重要过程的基本理解。这项工作的结果直接适用于半导体过程化学的发展，对新的纳米材料合成方法的理解，以及生物传感器器件的开发。了解氧、氮、卤素和碳氢化合物与半导体表面的反应对于开发电子和光电子器件加工方法是至关重要的。需要基本的结构和动力学信息才能获得这种理解。利用红外光谱和电子结构计算，在硅、锗和碳化硅表面研究了这些反应的基本机理。本科生和研究生正在接受对这些技术至关重要的基础表面科学方面的培训。

AbstractCHE-0415652Chabal/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Chabal and his colleagues in the Laboratory for Surface Modification at Rutgers University are examining the detailed surface chemistry of silicon, germanium, and silicon carbide. Studies of oxidation, nitridation, chlorination, attachment of organic functionalities, and metallization are being carried out. High resolution infrared spectroscopy coupled with theoretical studies of the structure and electronic properties of the modified surfaces provides the fundamental understanding of these important processes. The results of this work are directly applicable to the development of semiconductor process chemistry, the understanding of new nanomaterials synthesis methods, and the development of biological sensor devices. An understanding of the reactions of oxygen, nitrogen, halogens, and hydrocarbons with semiconductor surfaces is essential to the development of electronic and optoelectronic device processing methods. Fundamental structural and kinetic information is needed to obtain this understanding. Using infrared spectroscopy and electronic structure calculations, the fundamental mechanisms of these reactions are being examined on silicon, germanium, and silicon carbide surfaces. Undergraduate and graduate students are being trained in the fundamental surface science that is crucial to these technologies.