US-France Cooperative Research: Molecule/Surface Interaction and the Formation of Ultra-Thin Layers During High-k Dielectric Growth on Silicon

美法合作研究：硅上高 k 电介质生长过程中的分子/表面相互作用和超薄层的形成

• 批准号: 0341053
• 负责人: Yves Chabal
• 金额: $ 0.9万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-15 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0341053&HistoricalAwards=false
• 关键词: US; France; Cooperative; Research; Molecule

0341053ChabalThis three-year U.S.-France cooperative research project's goal is to develop new modeling tools to deal with the initial growth of high k dielectrics at the microscopic level. The use of high k dielectric is imperative for the microelectronic industry and will be implemented well before the end of this decade. The urgency of this technology requires a concerted effort combining molecular level simulations and advanced characterization to uncover the elementary mechanisms fundamental to technological processing.In this project, researchers at Rutgers University led by Yves Chabal and researchers at the Laboratoire d'Architecture et Analyse des Systemes in Toulouse, France, led by Alain Esteve, combine theoretical and experimental expertise. The U.S. team brings to the collaboration expertise in high-k dielectric characterization. This is complemented by French specialization in modeling of high-k dielectric growth. Their partnership builds on initial research on silicon substrates using Atomic Layer Deposition (ALD) and takes advantage of novel Kinetic Monte Carlo (KMC) methods developed by the French team. The KMC methods will complement the more established approaches, such as infrared absorption spectroscopy for experimental input and ab-initio quantum chemicalcalculations for theoretical vibrational mode assignment. The goal is to uncover new microscopic mechanisms.The project is supported jointly by the National Science Foundation and the Centre National de la Recherche Scientifique (CNRS). NSF provides support to the U.S. institution for annual visits to France. This is complemented by reciprocal funding by the CNRS for visits to the U.S. by the French research team.

这个为期三年的美法合作研究项目的目标是开发新的建模工具，以在微观水平上处理高k电介质的初始增长。高k介电材料的使用对微电子工业来说是必不可少的，并将在本十年结束之前很好地实现。这项技术的紧迫性需要结合分子水平的模拟和先进的表征来共同努力，以揭示技术过程的基本机制。在这个项目中，由Yves Chabal领导的罗格斯大学的研究人员和由Alain Esteve领导的法国图卢兹的实验室的研究人员将理论和实验专业知识结合在一起。美国团队为合作带来了高k介电特性方面的专业知识。这一点得到了法国在高k介电生长建模方面的专门研究的补充。他们的合作建立在使用原子层沉积(ALD)对硅衬底进行初步研究的基础上，并利用了法国团队开发的新的动力学蒙特卡罗(KMC)方法。KMC方法将补充更成熟的方法，如用于实验输入的红外吸收光谱和用于理论振动模分配的从头算量子化学计算。该项目的目标是发现新的微观机制。该项目由国家科学基金会和国家科学研究中心(CNRS)联合支持。NSF为这家美国机构每年访问法国提供支持。此外，CNRS还为法国研究团队访问美国提供了互惠资金。