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US-France Cooperative Research: Molecule/Surface Interaction and the Formation of Ultra-Thin Layers During High-k Dielectric Growth on Silicon

US-France Cooperative Research: Molecule/Surface Interaction and the Formation of Ultra-Thin Layers During High-k Dielectric Growth on Silicon
美法合作研究:硅上高 k 电介质生长过程中的分子/表面相互作用和超薄层的形成
批准号:
0341053
负责人:
Yves Chabal
金额:
$0.9万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-01-15 至 2006-12-31

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中文摘要
翻译
这个为期三年的美法合作研究项目的目标是开发新的建模工具,以在微观水平上处理高k介电体的初始生长。高介电常数的使用对微电子工业是必要的,并将在本十年结束前得到很好的实施。这项技术的紧迫性需要协调一致的努力,结合分子水平模拟和高级表征,以揭示技术处理的基本机制。在这个项目中,由Yves Chabal领导的罗格斯大学的研究人员和由Alain Esteve领导的法国图卢兹建筑与系统分析实验室的研究人员将理论和实验专业知识结合起来。美国团队带来了高k介电特性方面的专业知识。这与法国在高k介电生长建模方面的专业知识相辅相成。他们的合作关系建立在使用原子层沉积(ALD)对硅衬底进行初步研究的基础上,并利用了法国团队开发的新型动能蒙特卡罗(KMC)方法。KMC方法将补充更成熟的方法,如用于实验输入的红外吸收光谱和用于理论振动模式分配的从头算量子化学计算。目标是揭示新的微观机制。该项目由国家科学基金会和国家科学研究中心(CNRS)联合支持。国家科学基金会每年为美国机构访问法国提供支持。此外,法国国家科学研究中心还为法国研究小组访问美国提供了互惠资助。
英文摘要
0341053ChabalThis three-year U.S.-France cooperative research project's goal is to develop new modeling tools to deal with the initial growth of high k dielectrics at the microscopic level. The use of high k dielectric is imperative for the microelectronic industry and will be implemented well before the end of this decade. The urgency of this technology requires a concerted effort combining molecular level simulations and advanced characterization to uncover the elementary mechanisms fundamental to technological processing.In this project, researchers at Rutgers University led by Yves Chabal and researchers at the Laboratoire d'Architecture et Analyse des Systemes in Toulouse, France, led by Alain Esteve, combine theoretical and experimental expertise. The U.S. team brings to the collaboration expertise in high-k dielectric characterization. This is complemented by French specialization in modeling of high-k dielectric growth. Their partnership builds on initial research on silicon substrates using Atomic Layer Deposition (ALD) and takes advantage of novel Kinetic Monte Carlo (KMC) methods developed by the French team. The KMC methods will complement the more established approaches, such as infrared absorption spectroscopy for experimental input and ab-initio quantum chemicalcalculations for theoretical vibrational mode assignment. The goal is to uncover new microscopic mechanisms.The project is supported jointly by the National Science Foundation and the Centre National de la Recherche Scientifique (CNRS). NSF provides support to the U.S. institution for annual visits to France. This is complemented by reciprocal funding by the CNRS for visits to the U.S. by the French research team.
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Materials World Network, SusChEM: Control of Interfacial Chemistry in Reactive Nanolaminates (CIREN)
  • 批准号:
    1312525
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.6万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
  • 依托单位:
Role of structure in chemical functionalization of oxide-free silicon surfaces and nanoparticles
  • 批准号:
    1300180
  • 项目类别:
    Standard Grant
  • 资助金额:
    $38.37万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
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AIR Option 1: Tech Translation - Ultrananocrystalline Diamond Coating Tech for Integrated Electrode-Membrane-Inner Wall Case Coating for Long Life Commercial Li-Sulfur Battery
  • 批准号:
    1343461
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2013
  • 负责人:
    Yves Chabal
  • 依托单位:
Surface Chemical Functionalization of Semiconductors and Nanostructures
  • 批准号:
    0911197
  • 项目类别:
    Standard Grant
  • 资助金额:
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  • 财政年份:
    2009
  • 负责人:
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  • 依托单位:
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