Surface Chemical Functionalization of Technologically Important Semiconductors: Silicon, Germanium, and Silicon Carbide
具有重要技术意义的半导体的表面化学功能化:硅、锗和碳化硅
基本信息
- 批准号:0827634
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-01-01 至 2010-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AbstractCHE-0415652Chabal/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Chabal and his colleagues in the Laboratory for Surface Modification at Rutgers University are examining the detailed surface chemistry of silicon, germanium, and silicon carbide. Studies of oxidation, nitridation, chlorination, attachment of organic functionalities, and metallization are being carried out. High resolution infrared spectroscopy coupled with theoretical studies of the structure and electronic properties of the modified surfaces provides the fundamental understanding of these important processes. The results of this work are directly applicable to the development of semiconductor process chemistry, the understanding of new nanomaterials synthesis methods, and the development of biological sensor devices. An understanding of the reactions of oxygen, nitrogen, halogens, and hydrocarbons with semiconductor surfaces is essential to the development of electronic and optoelectronic device processing methods. Fundamental structural and kinetic information is needed to obtain this understanding. Using infrared spectroscopy and electronic structure calculations, the fundamental mechanisms of these reactions are being examined on silicon, germanium, and silicon carbide surfaces. Undergraduate and graduate students are being trained in the fundamental surface science that is crucial to these technologies.
在分析和表面化学计划的支持下,罗格斯大学表面修饰实验室的Chabal教授和他的同事们正在研究硅、锗和碳化硅的详细表面化学。氧化、氮化、氯化、有机官能团连接和金属化的研究正在进行中。高分辨率红外光谱结合对改性表面的结构和电子性质的理论研究,提供了对这些重要过程的基本理解。这项工作的结果直接适用于半导体过程化学的发展,对新的纳米材料合成方法的理解,以及生物传感器器件的开发。了解氧、氮、卤素和碳氢化合物与半导体表面的反应对于开发电子和光电子器件加工方法是至关重要的。需要基本的结构和动力学信息才能获得这种理解。利用红外光谱和电子结构计算,在硅、锗和碳化硅表面研究了这些反应的基本机理。本科生和研究生正在接受对这些技术至关重要的基础表面科学方面的培训。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Yves Chabal其他文献
Yves Chabal的其他文献
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{{ truncateString('Yves Chabal', 18)}}的其他基金
Materials World Network, SusChEM: Control of Interfacial Chemistry in Reactive Nanolaminates (CIREN)
材料世界网络,SusChEM:反应性纳米层压材料中界面化学的控制(CIREN)
- 批准号:
1312525 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Standard Grant
Role of structure in chemical functionalization of oxide-free silicon surfaces and nanoparticles
结构在无氧化物硅表面和纳米粒子化学功能化中的作用
- 批准号:
1300180 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Standard Grant
AIR Option 1: Tech Translation - Ultrananocrystalline Diamond Coating Tech for Integrated Electrode-Membrane-Inner Wall Case Coating for Long Life Commercial Li-Sulfur Battery
AIR选项1:技术翻译-用于长寿命商用锂硫电池的集成电极-膜-内壁外壳涂层的超纳米晶金刚石涂层技术
- 批准号:
1343461 - 财政年份:2013
- 资助金额:
-- - 项目类别:
Standard Grant
Surface Chemical Functionalization of Semiconductors and Nanostructures
半导体和纳米结构的表面化学功能化
- 批准号:
0911197 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Standard Grant
MRI: Development of an Integrated Thin Film Growth System with Comprehensive In-situ Characterization for Research and Education
MRI:开发具有综合原位表征的集成薄膜生长系统,用于研究和教育
- 批准号:
0421028 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Standard Grant
Surface Chemical Functionalization of Technologically Important Semiconductors: Silicon, Germanium, and Silicon Carbide
具有重要技术意义的半导体的表面化学功能化:硅、锗和碳化硅
- 批准号:
0415652 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Continuing Grant
US-France Cooperative Research: Molecule/Surface Interaction and the Formation of Ultra-Thin Layers During High-k Dielectric Growth on Silicon
美法合作研究:硅上高 k 电介质生长过程中的分子/表面相互作用和超薄层的形成
- 批准号:
0341053 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Standard Grant
相似国自然基金
Chinese Journal of Chemical Engineering
- 批准号:21224004
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- 资助金额:20.0 万元
- 项目类别:专项基金项目
Chinese Journal of Chemical Engineering
- 批准号:21024805
- 批准年份:2010
- 资助金额:20.0 万元
- 项目类别:专项基金项目
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