Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity

传感器：两种超高灵敏度悬浮硅纳米线传感器

• 批准号: 0529104
• 负责人: Cheng Luo
• 金额: $ 24万
• 依托单位: Louisiana Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-09-01 至 2008-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0529104&HistoricalAwards=false
• 关键词: Sensors; Two; Types; Suspended; Silicon

0529104LUOThis project will systematically explore a thinning and trimming approach to the production of silicon nanowires (SiNW) from silicon microwires using a combination of theoretical, numerical and experimental investigations. The thinning and trimming approach will be used to generate SiNWs of diameters down to 20nm. Subsequently, two types of new suspended-SiNW-based sensors of ultra-high sensitivity will be developed to detect nontoxic and toxic targets of interest, respectively. One-dimensional nanostructures have attracted great attention recently because of their potential applications as excellent components in micro/nanodevices. SiNWs in particular have received much attention since silicon is the most widely used material in integrated-circuit and microfabrication processes and has unique mechanical and electrical properties. However, due to the shortcomings of the existing fabrication approaches, new methods are needed to produce SiNWs that cannot only be massively fabricated but also batch integrated to functional devices. The proposed thinning and trimming approach is believed to be such a method, and would permit precise control of the structure, size and positions of SiNWs. Furthermore, this method may be used to break through the limitation of lithography in the sense that silicon features fabricated by any lithographic methods can be further miniaturized using the approach. Compared with microbeam-based sensors, the two types of sensors are expected to be several orders higher in sensitivity. The project will contribute to nanotechnology education through new teaching modules and presentations for undergraduate and graduate students, and the animation of nanotechnology concepts on a website for K-12 students and teachers.

0529104LUO本项目将通过理论、数值和实验研究相结合的方法，系统地探索从硅微线生产硅纳米线(SiNW)的细化和修剪方法。细化和修剪方法将被用来产生直径小于20 nm的SiNW。随后，将开发两种新的基于悬浮SiNW的超高灵敏度传感器，分别用于检测感兴趣的无毒和有毒目标。一维纳米结构因其在微纳米器件中的潜在应用前景而引起了人们的极大关注。由于硅是集成电路和微制造工艺中应用最广泛的材料，并且具有独特的机械和电学性能，因此硅纳米管尤其受到人们的关注。然而，由于现有制备方法的不足，需要新的方法来制备不仅可以大规模制造而且可以批量集成到功能器件中的SiNW。拟议的细化和修剪方法被认为是这样一种方法，并将允许精确控制SiNW的结构、大小和位置。此外，这种方法可以用来突破光刻的局限性，即任何光刻方法制造的硅特征都可以使用该方法进一步微型化。与基于微束的传感器相比，这两种类型的传感器的灵敏度预计将高出几个数量级。该项目将通过为本科生和研究生提供新的教学模块和演示，以及在面向K-12学生和教师的网站上制作纳米技术概念动画，为纳米技术教育作出贡献。