Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity

传感器：两种超高灵敏度悬浮硅纳米线传感器

• 批准号: 0822609
• 负责人: Cheng Luo
• 金额: $ 10.07万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2009-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0822609&HistoricalAwards=false
• 关键词: Sensors; Two; Types; Suspended; Silicon

0529104LUOThis project will systematically explore a thinning and trimming approach to the production of silicon nanowires (SiNW) from silicon microwires using a combination of theoretical, numerical and experimental investigations. The thinning and trimming approach will be used to generate SiNWs of diameters down to 20nm. Subsequently, two types of new suspended-SiNW-based sensors of ultra-high sensitivity will be developed to detect nontoxic and toxic targets of interest, respectively. One-dimensional nanostructures have attracted great attention recently because of their potential applications as excellent components in micro/nanodevices. SiNWs in particular have received much attention since silicon is the most widely used material in integrated-circuit and microfabrication processes and has unique mechanical and electrical properties. However, due to the shortcomings of the existing fabrication approaches, new methods are needed to produce SiNWs that cannot only be massively fabricated but also batch integrated to functional devices. The proposed thinning and trimming approach is believed to be such a method, and would permit precise control of the structure, size and positions of SiNWs. Furthermore, this method may be used to break through the limitation of lithography in the sense that silicon features fabricated by any lithographic methods can be further miniaturized using the approach. Compared with microbeam-based sensors, the two types of sensors are expected to be several orders higher in sensitivity. The project will contribute to nanotechnology education through new teaching modules and presentations for undergraduate and graduate students, and the animation of nanotechnology concepts on a website for K-12 students and teachers.

0529104LUO该项目将结合理论、数值和实验研究，系统地探索一种从硅微米线生产硅纳米线（SiNW）的细化和修整方法。减薄和修整方法将用于生成直径小至 20 nm 的 SiNW。随后，将开发两种新型的超高灵敏度悬浮硅纳米线传感器，分别检测无毒和有毒目标。一维纳米结构最近因其作为微纳米器件中优异组件的潜在应用而引起了极大的关注。 SiNW 尤其受到广泛关注，因为硅是集成电路和微加工工艺中使用最广泛的材料，并且具有独特的机械和电气性能。然而，由于现有制造方法的缺点，需要新的方法来生产SiNW，不仅可以大规模制造，而且可以批量集成到功能器件中。所提出的细化和修整方法被认为是这样的方法，并且将允许精确控制SiNW的结构、尺寸和位置。此外，该方法可以用于突破光刻的限制，因为可以使用该方法进一步小型化通过任何光刻方法制造的硅特征。与基于微束的传感器相比，这两种类型的传感器的灵敏度预计高几个数量级。该项目将通过为本科生和研究生提供新的教学模块和演示，以及在网站上为 K-12 学生和教师提供纳米技术概念动画，为纳米技术教育做出贡献。