Generation Of Sidewall Patterns Using A Thermal Shape-Memory Polymer
使用热形状记忆聚合物生成侧壁图案
基本信息
- 批准号:1030659
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-08-15 至 2014-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The grant provides funding for investigating a novel approach to fabricate chips on the sidewalls of substrate structures. Consequently, chip density in a miniaturized semiconductor system will be increased resulting in improved functionality, such as increased computer speed. There is no viable method yet developed which takes advantage of the sidewall areas of substrate structures to generate patterns; only the top surfaces of the substrate structures are used to store chips. The proposed process makes good use of the strain-recovery deformation of a thermal shape-memory polymer. Such a polymer recovers its original shape from the deformed shape when it is heated above a certain temperature. This project will systematically explore the creation of sidewall chips of sizes down to 100 nanometers, using a combination of theoretical, numerical and experimental investigations.If successful, this method will become one of the major approaches to generate miniaturized semiconductor systems of densely distributed chips, and the systematic investigation of the method in this project will be a critical move to achieve this goal. The project will also focus on an effort to help K-12, undergraduate and graduate students visualize micro- and nanotechnology concepts. In addition, the principal investigator is committed to furthering the involvement of undergraduate students and minorities in scientific research.
该赠款为研究在衬底结构侧壁上制造芯片的新方法提供资金。因此,小型化半导体系统中的芯片密度将增加,从而导致改进的功能,例如增加的计算机速度。还没有开发出利用衬底结构的侧壁区域来产生图案的可行方法;仅衬底结构的顶表面用于存储芯片。所提出的工艺很好地利用了热形状记忆聚合物的应变恢复变形。当这种聚合物被加热到一定温度以上时,其从变形的形状恢复其原始形状。本项目将结合理论、数值和实验研究,系统地探索100纳米以下的侧壁芯片的制造方法。如果成功,该方法将成为制造密集分布芯片的小型化半导体系统的主要方法之一,本项目中对该方法的系统研究将是实现这一目标的关键步骤。该项目还将致力于帮助K-12,本科生和研究生可视化微米和纳米技术概念。此外,首席研究员致力于促进本科生和少数民族参与科学研究。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Cheng Luo其他文献
Critical role of Lüders banding in hydrogen embrittlement susceptibility of medium Mn steels
Lüders 带在中锰钢氢脆敏感性中的关键作用
- DOI:
10.1016/j.scriptamat.2020.08.025 - 发表时间:
2021 - 期刊:
- 影响因子:6
- 作者:
Jun Zhang;Mingxin Huang;Binhan Sun;Boning Zhang;Ran Ding;Cheng Luo;Wu Zeng;Chi Zhang;Zhigang Yang;Sybr;van der Zwaag;Hao Chen - 通讯作者:
Hao Chen
Design, synthesis, biological evaluation and cocrystal structures with tubulin of chiral β-lactam bridged combretastatin A-4 analogues as potent antitumor agents
设计、合成、生物学评价和共晶体结构与手性 β-内酰胺桥考布他汀 A-4 类似物的微管蛋白作为有效的抗肿瘤剂
- DOI:
10.1016/j.ejmech.2017.12.004 - 发表时间:
2017 - 期刊:
- 影响因子:6.7
- 作者:
Pengfei Zhou;Yuru Liang;Hao Zhang;Hao Jiang;Kechang Feng;Pan Xu;Jie Wang;Xiaoming Wang;Kuiling Ding;Cheng Luo;Mingming Liu;Yang Wang - 通讯作者:
Yang Wang
Pornography Detection with the Wisdom of Crowds
利用群众的智慧进行色情检测
- DOI:
10.1007/978-3-642-45068-6_20 - 发表时间:
2013 - 期刊:
- 影响因子:0
- 作者:
Cheng Luo;Yiqun Liu;Shaoping Ma;Min Zhang;Liyun Ru;Kuo Zhang - 通讯作者:
Kuo Zhang
An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs
用于并联 SiC MOSFET 动态均流的有源栅极驱动器
- DOI:
10.1109/ecce47101.2021.9596040 - 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Xun Wang;Yang He;Junming Zhang;Shuai Shao;Han Li;Cheng Luo - 通讯作者:
Cheng Luo
Fabrication and properties of micro-additive manufactured Ni-based composite coatings by short-pulsed laser
短脉冲激光微增材制造镍基复合涂层的制备及性能
- DOI:
10.1016/j.optlastec.2022.107973 - 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Youqiang Xing;Cheng Luo;Ze Wu;Kedong Zhang;Lei Liu - 通讯作者:
Lei Liu
Cheng Luo的其他文献
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{{ truncateString('Cheng Luo', 18)}}的其他基金
Development Of A Nanopunching Lithography Method For Generating Sidewall Templates And Polymer-Based Nanodevices
开发用于生成侧壁模板和聚合物纳米器件的纳米冲孔光刻方法
- 批准号:
0900595 - 财政年份:2009
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Theoretical, Numerical and Experimental Studies of an Intermediate-Layer Lithography Approach
中间层光刻方法的理论、数值和实验研究
- 批准号:
0654202 - 财政年份:2007
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Theoretical, Numerical and Experimental Studies of an Intermediate-Layer Lithography Approach
中间层光刻方法的理论、数值和实验研究
- 批准号:
0811888 - 财政年份:2007
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity
传感器:两种超高灵敏度悬浮硅纳米线传感器
- 批准号:
0822609 - 财政年份:2007
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity
传感器:两种超高灵敏度悬浮硅纳米线传感器
- 批准号:
0529104 - 财政年份:2005
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
NER: An Innovative Intermediate-Layer Lithography Approach For Patterning Conducting Polymers
NER:用于图案化导电聚合物的创新中间层光刻方法
- 批准号:
0508454 - 财政年份:2005
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
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