NIRT: Surface State Engineering - Charge Storage and Conduction in Organo-Silicon Heterostructures as a Basis for Nanoscale Devices

0708923约翰·比恩(欧洲经委会)、阿维克·戈什(欧洲经委会)、劳埃德·R·哈里奥特(欧洲经委会)、林普(化学)、基思·威廉姆斯(物理学)，弗吉尼亚大学：《表面状态工程》--作为纳米尺度器件基础的有机硅异质结构中的电荷存储和传导智力价值：本提案是应活跃的纳米结构和纳米系统征集而收到的，NSF 06-595，NIRT类别。该项目结合了分子电子学和微电子学的工作，为“表面状态工程”奠定了科学技术基础。具体地说，有机分子将如此强烈而紧密地附着在硅表面，以至于两种材料中的电子将能够以量子力学的方式重叠。这为精确地将电荷引入未来纳米级金属氧化物半导体场效应晶体管提供了全新的机制。它也为基于有机分子和半导体电子波函数之间的量子力学干涉的新的导电现象打开了大门。该建议通过开发三种工具，弥合了学科边界和基础科学与技术之间的边界：(1)针对量子点和硅层的非常不同的物理的尖端建模技术，结合这些技术产生有机硅结构的混合模型；(2)以与现代微电子工艺兼容的方式在硅上附着高纯度自限制单分子层的新的气相技术；(3)基于技术相关的绝缘体上硅的背栅纳米场效应晶体管的表征和器件验证平台。更广泛的影响：除了打开科学学科之间的大门外，这项提议还提出了穿过美国半导体电子业面前的“砖墙”的方法。它这样做的方式并不是要求奇迹般地开发新的独立纳米技术，而是利用吸取的经验教训提出一种结合了分子电子学和现代微电子学的优点的混合技术。最后，该提案建立在网络和课堂上先前在纳米科学教育方面的开创性工作的基础上，与弗吉尼亚州科学博物馆发展新的合作伙伴关系，将纳米科学交到弗吉尼亚州联邦各地的K-12学生和教师手中。

0708923John C. Bean (ECE), Avik Ghosh (ECE), Lloyd R. Harriott (ECE), Lin Pu (Chemistry), Keith Williams (Physics), University of VirginiaNIRT: "Surface State Engineering" - Charge Storage and Conduction in Organo-Silicon Heterostructures as a Basis for Nanoscale DevicesIntellectual Merit: This proposal was received in response to the Active Nanostructures and Nanosystems solicitation, NSF 06-595, category NIRT. The project combines work in molecular electronics and microelectronics to lay the scientific and technological foundations of "Surface State Engineering." Specifically, organic molecules will be attached to silicon surfaces so strongly and intimately that electrons in both materials will be able to overlap quantum mechanically. This offers entirely new mechanisms for precisely introducing charge into future nanoscale metal oxide semiconductor field effect transistors. It also opens the door to new conduction phenomenon based on quantum mechanical interference between organo-molecular and semiconductor electron wave functions. The proposal bridges disciplinary boundaries and the boundary between fundamental science and technology through its development of three tools: (1) Sophisticated modeling techniques addressing the very different physics of quantum dots and silicon layers, combining these to produce a hybrid model of organo-silicon structures; (2) New vapor phase techniques for attaching high purity self-limiting single molecular layers on silicon in a manner compatible with modern microelectronics processing; (3) A characterization and device validation platform based on technologically relevant silicon-on-insulator back-gated nanoscale field effect transistors. Broader Impacts: In addition to opening doors between scientific disciplines, this proposal suggests ways to pass through the "Brick Wall" looming ahead of the U.S. semiconductor electronics industry. It does this in a manner that does not call for miraculous development of new stand-alone nanotechnologies, but instead uses lessons learned to propose a hybrid technology combining the strengths of molecular electronics with the strengths of modern microelectronics. Finally, the proposal builds upon prior ground-breaking work in nanoscience education on both the web and in the classroom to develop a new partnership with the Science Museum of Virginia that will place nanoscience into the hands of K-12 students and teachers across the Commonwealth of Virginia.