NIRT: Surface State Engineering - Charge Storage and Conduction in Organo-Silicon Heterostructures as a Basis for Nanoscale Devices

0708923John C. Bean（ECE），Avik Ghosh（ECE），Lloyd R. Harriott（ECE），Lin Pu（化学），基思威廉姆斯（物理），美国伊利诺伊大学NIRT：“表面态工程”-有机硅异质结构中的电荷存储和传导作为纳米级器件的基础知识价值：该提案是响应NSF 06-595，类别NIRT的有源纳米结构和纳米系统征集而收到的。该项目结合了分子电子学和微电子学的工作，为“表面状态工程”奠定了科学和技术基础。“具体来说，有机分子将如此强烈和紧密地附着在硅表面上，以至于两种材料中的电子将能够量子力学地重叠。 这为精确地将电荷引入未来的纳米级金属氧化物半导体场效应晶体管提供了全新的机制。 它还打开了一扇大门，新的导电现象的基础上的量子力学干涉有机分子和半导体电子波函数。 该提案通过开发三种工具，弥合了学科界限和基础科学与技术之间的界限：（1）针对量子点和硅层的非常不同的物理特性的复杂建模技术，将这些技术结合起来，产生有机硅结构的混合模型;（2）以与现代微电子加工相容的方式在硅上附着高纯度自限性单分子层的新气相技术;（3）基于技术相关的绝缘体上硅背栅纳米级场效应晶体管的表征和器件验证平台。更广泛的影响：除了在科学学科之间打开大门外，该提案还提出了穿越美国半导体电子行业面前隐约可见的“砖墙”的方法。 它这样做的方式，不要求奇迹般的发展新的独立的纳米技术，而是利用经验教训，提出一种混合技术相结合的分子电子学的优势与现代微电子学的优势。 最后，该提案建立在网络和课堂上纳米科学教育的开创性工作的基础上，与弗吉尼亚科学博物馆建立了新的合作伙伴关系，将纳米科学置于弗吉尼亚联邦K-12学生和教师手中。

0708923John C. Bean (ECE), Avik Ghosh (ECE), Lloyd R. Harriott (ECE), Lin Pu (Chemistry), Keith Williams (Physics), University of VirginiaNIRT: "Surface State Engineering" - Charge Storage and Conduction in Organo-Silicon Heterostructures as a Basis for Nanoscale DevicesIntellectual Merit: This proposal was received in response to the Active Nanostructures and Nanosystems solicitation, NSF 06-595, category NIRT. The project combines work in molecular electronics and microelectronics to lay the scientific and technological foundations of "Surface State Engineering." Specifically, organic molecules will be attached to silicon surfaces so strongly and intimately that electrons in both materials will be able to overlap quantum mechanically. This offers entirely new mechanisms for precisely introducing charge into future nanoscale metal oxide semiconductor field effect transistors. It also opens the door to new conduction phenomenon based on quantum mechanical interference between organo-molecular and semiconductor electron wave functions. The proposal bridges disciplinary boundaries and the boundary between fundamental science and technology through its development of three tools: (1) Sophisticated modeling techniques addressing the very different physics of quantum dots and silicon layers, combining these to produce a hybrid model of organo-silicon structures; (2) New vapor phase techniques for attaching high purity self-limiting single molecular layers on silicon in a manner compatible with modern microelectronics processing; (3) A characterization and device validation platform based on technologically relevant silicon-on-insulator back-gated nanoscale field effect transistors. Broader Impacts: In addition to opening doors between scientific disciplines, this proposal suggests ways to pass through the "Brick Wall" looming ahead of the U.S. semiconductor electronics industry. It does this in a manner that does not call for miraculous development of new stand-alone nanotechnologies, but instead uses lessons learned to propose a hybrid technology combining the strengths of molecular electronics with the strengths of modern microelectronics. Finally, the proposal builds upon prior ground-breaking work in nanoscience education on both the web and in the classroom to develop a new partnership with the Science Museum of Virginia that will place nanoscience into the hands of K-12 students and teachers across the Commonwealth of Virginia.