Nonlinear Semiconductor-Metal Phase Transition Induced Frequency Modulation (FM) based Mid-Infrared Detection at Room Temperature

基于非线性半导体-金属相变感应调频 (FM) 的室温中红外检测

• 批准号: 2015722
• 负责人: Debashis Chanda
• 金额: $ 35万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-05-01 至 2025-04-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2015722&HistoricalAwards=false
• 关键词: Nonlinear; Semiconductor; Metal; Phase; Transition

PROJECT ABSTRACTProposal Title:Nonlinear Semiconductor-Metal Phase Transition Induced Frequency Modulation (FM) based Mid-Infrared Detection at Room Temperature(2015722)Non-technical AbstractThe proposed research intends to develop a novel infrared detection scheme that takes advantage of the ultrafast resistance change in self-resonant vanadium dioxide film at the semiconductor-metal transition. The optical antenna patterned composite film absorbs strongly across a wide incident angle effectively working like a light funnel. The phase transition and strong infrared absorption process results in large change in the resonance frequency. The proposed infrared detection scheme provides solutions to overcome limitations arising from thermal memory that has been a major bottleneck in operating vanadium dioxide-based detectors and promises much higher detectivity comparable to the cryogenically cooled detectors. The localized absorption and low thermal mass promise faster response compared to bulk absorption based present uncooled infrared detectors. The optical antenna pattern will be encoded in a master pattern. One such master produces 100’s of polymeric imprinting stamps, and one stamp can produce 1000’s of imprints without any noticeable pattern degradation for low cost uncooled infrared detection and imaging schemes. In this context, the proposed work is revolutionary because it promises uncooled, tunable and low-cost infrared detection. The program provides a good platform for interdisciplinary research and graduate education. The research will generate exciting scientific contents for enriching graduate and undergraduate teaching. The proposed project will also serve to train graduate students in nanolithography and optoelectronic device fabrication to prepare a qualified work force for US manufacturing industry.Technical AbstractA deterministic infrared absorption induced phase transition seems to be a plausible option for high-sensitive infrared detection at room temperature. This opens the opportunity to explore phase transition of vanadium dioxide in the context of this proposal where light localization on a nanostructured thin-film promises high-sensitive infrared detection. The optical antenna behaves as perfect light collector to couple light to the active vanadium dioxide film with ~100% efficiency where, in a unique way, the majority of the absorption takes place in the vanadium dioxide film instead of the gold optical antenna, required for high sensitive detection. This proposal will generate new scientific knowledge by (1) providing fundamental understanding of phase transition of nanostructured vanadium dioxide in presence of strong light localization, (2) the phase transition mechanism promising to create low-loss, long life-time plasmons on the interfaces of semiconductor-metal grains over a specified range of semiconductor-metal transition edge, resulting in high signal to noise ratio, (3) the detector time response measurements will shed light on the dominant phenomenon (Hubbard correlation or Peierls transition) of the phase transition of the nanostructured vanadium dioxide film, and (4) in the self-cascaded scenario, the central oscillation shifts over several kilo-hertz as the infrared radiation changes the local temperature. Tracking the change in the oscillator frequency with respect to change in local temperature, while the vanadium dioxide system is electrically biased in the phase transition edge promises higher sensitivity. All present detectors function based on amplitude modulation and the performance is limited by the amplitude noise. The proposed frequency modulation-based detection scheme offers noise resistance and higher photon detection sensitivity. Overall, frequency tunable high-sensitive infrared detection ability will add an unexplored dimension to room temperature infrared detection and imaging techniques.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

PROJECT ABSTRACTProposal Title:Nonlinear Semiconductor-Metal Phase Transition Induced Frequency Modulation (FM) based Mid-Infrared Detection at Room Temperature(2015722)Non-technical AbstractThe proposed research intends to develop a novel infrared detection scheme that takes advantage of the ultrafast resistance change in self-resonant vanadium dioxide film at the semiconductor-metal transition.光学天线图案化的复合膜在较大的入射角上强烈吸收，像光漏斗一样有效地工作。相变和强大影响的抽象过程导致共振频率发生巨大变化。拟议的受影响的检测方案提供了解决热记忆产生的局限性的解决方案，这是基于二氧化二氧化氧化钒的探测器的主要瓶颈，并承诺更高的检测到可与低温冷却的探测器相当。与目前未冷却的感染探测器相比，与大量遭受相比，局部抽象和低热量质量有望更快的反应。光天线图案将以主模式进行编码。一位这样的大师会产生100张聚合物印记邮票，一张邮票可以产生1000张烙印，而没有任何明显的模式降解，而对于低成本的不冷感染感染检测和成像方案。在这种情况下，拟议的工作是革命性的，因为它承诺将不具有冷却，可调和低成本的红外检测。该计划为跨学科研究和研究生教育提供了一个很好的平台。这项研究将产生令人兴奋的科学内容，以丰富研究生和本科教学。拟议的项目还将有助于培训纳米见解和光电设备制造的研究生，以准备美国制造业的合格劳动力。技术摘要确定性红外分析诱导的相过渡似乎是在室温下高敏感红外检测的普利亚选择。这为探索二氧化钒的相过渡的机会开放了，在此提案中，纳米结构化薄膜上的光定位有望高敏感的红外检测。光学天线表现为完美的光收集器，可将光线与活跃的二氧化钒膜搭配到约100％的效率，在独特的方式中，大部分受损失发生在二氧化钒膜中而不是金光学天线，而不是高敏感检测所需的金色光天线。该提议将通过（1）在存在强光定位的情况下（1）提供对纳米结构二氧化衣的二氧化钒的相过渡的基本了解，（2）相过渡机制有望在半差异范围内的半导体范围内的噪声范围内产生低损坏的长期等离子，从而在半差异范围内产生噪声范围，从而产生噪声范围，从而产生了噪声范围，从而产生了杂音范围，从而覆盖了高度范围。时间响应测量结果将阐明纳米结构式二氧化钒膜的相变的主要现象（哈伯德相关性或PEIERLS跃迁），以及（4）在自我震荡的情况下，中央振荡的转移，几公斤的辐射范围会随着局部辐射的数量而变化。跟踪振荡器频率在局部温度变化方面的变化，而二氧化钒系统则在相过渡边缘有电偏向于较高的灵敏度。所有当前检测器的功能基于放大器调制，并且性能受到放大器噪声的限制。提出的基于频率调制的检测方案具有噪声阻力和较高的光子检测灵敏度。总体而言，频率可调节的高敏性抑制检测能力将为室温红外检测和成像技术增加意外的维度。该奖项反映了NSF的法定任务，并且我们是否使用基金会的智力优点和更广泛的影响来审查标准。