Collaborative Research: High Density Metal and Semiconductor Nanoparticles for Memory and Photonic Applications

合作研究:用于存储器和光子应用的高密度金属和半导体纳米颗粒

基本信息

  • 批准号:
    0802157
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2008
  • 资助国家:
    美国
  • 起止时间:
    2008-06-01 至 2012-05-31
  • 项目状态:
    已结题

项目摘要

Abstract:Research Objectives and Approaches: The objective of this research is to study and optimize the interactions of nanoparticles in memory and photonic devices. Activities carried out under this project will include the formation and thermal stability of nanocrystals of the right size, size distribution and spacing by three viable methods, understanding electron injection into the metallic and semiconductor nanoparticles, understanding electron transfer between nanoparticles and the adjacent dielectric material and integrating nanoparticles in emerging memory and photonic devices such as FinFLASH and FinLight. Intellectual Merit The success of the proposed activity will result in high performance memory and photonics devices which are fully compatible with CMOS. This will be accompanied by gaining fundamental insight into the interface between nanocrystals and its surrounding dielectrics. The collaboration with industry leaders in memory area will further solidify the approaches used in this work and transition them into viable manufacturable processes. Broader Impact: The successful implementation of robust nanoparticle based devices will open up new opportunities not only in electronics but also in emerging areas such as biosensors and energy efficiency. PIs at both institutions will develop educational programs such as undergraduate nanolab course, development of a a nanocamp for high school students, an engineer?s week for even younger students, and career fairs for minorities for graduate schools which will enrich the student experience and also increase diversity of the education workforce. In addition, industrial internships provided to the graduate students will foster communication of industry needs to the university, while providing a highly trained workforce for industry in the future.
摘要:研究目标和方法:本研究的目的是研究和优化纳米粒子在存储和光子器件中的相互作用。在该项目下开展的活动将包括通过三种可行的方法形成合适尺寸、尺寸分布和间距的纳米晶体的形成和热稳定性,了解电子注入到金属和半导体纳米颗粒中,了解纳米颗粒与相邻介质材料之间的电子转移,以及将纳米颗粒集成到新兴的存储器和光子器件中,如FinFLASH和FinLight。智能价值建议的活动的成功将导致高性能的存储器和光电子器件,这些器件完全与cmos兼容。这将伴随着对纳米晶体及其周围电介质之间的界面的基本洞察。与存储领域的行业领先者的合作将进一步巩固这项工作中使用的方法,并将它们转变为可行的可制造工艺。更广泛的影响:强大的纳米颗粒设备的成功实施将不仅在电子领域,而且在生物传感器和能源效率等新兴领域开辟新的机会。这两所大学的PIS将开展教育项目,如本科纳米实验室课程,为高中生开发纳米夏令营,为更年轻的学生举办工程师?S周,以及为研究生举办少数民族招聘会,这将丰富学生体验,并增加教育队伍的多样性。此外,为研究生提供的行业实习将促进行业需求与大学的沟通,同时为未来的行业提供训练有素的劳动力。

项目成果

期刊论文数量(0)
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Veena Misra其他文献

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
  • DOI:
    10.1007/s11664-001-0165-1
  • 发表时间:
    2001-12-01
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Veena Misra;Manoj Kulkarni;Huicai Zhong
  • 通讯作者:
    Huicai Zhong
Hybrid silicon/molecular FETs: a study of the interaction of redox-active molecules with silicon MOSFETs
混合硅/分子 FET:氧化还原活性分子与硅 MOSFET 相互作用的研究
High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide
  • DOI:
    10.1007/bf02666631
  • 发表时间:
    1996-03-01
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Veena Misra;Xiaoli Xu;Brian E. Hornung;Richard T. Kuehn;Donald S. Miles;John R. Hauser;Jimmie J. Wortman
  • 通讯作者:
    Jimmie J. Wortman
Development of plasmonics-active SERS substrates on a wafer scale for chemical and biological sensing applications
开发用于化学和生物传感应用的晶圆级等离子体活性 SERS 基底
  • DOI:
    10.1109/iedm.2008.4796732
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Dhawan;Yan Du;Hsin;Donovan N. Leonard;Veena Misra;Mehmet C. Öztürk;M. Gerhold;Tuan Vo
  • 通讯作者:
    Tuan Vo
Properties of Ta–Mo alloy gate electrode for n-MOSFET
  • DOI:
    10.1007/s10853-005-2108-3
  • 发表时间:
    2005-05-01
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Chung Keun Lee;Jae Young Kim;Shin Nam Hong;Huicai Zhong;Bei Chen;Veena Misra
  • 通讯作者:
    Veena Misra

Veena Misra的其他文献

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{{ truncateString('Veena Misra', 18)}}的其他基金

EAGER: A novel route for high activation of implanted p-type regions in vertical Gallium Nitride devices.
EAGER:一种在垂直氮化镓器件中高度激活注入 p 型区域的新途径。
  • 批准号:
    2230090
  • 财政年份:
    2022
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Wearable Nanodevices, Linking Health and Environment: RET in Engineering and Computer Science Site
可穿戴纳米设备,连接健康与环境:工程和计算机科学网站中的 RET
  • 批准号:
    1407202
  • 财政年份:
    2014
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
NSF Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST)
NSF 纳米系统先进自供电集成传感器和技术系统工程研究中心 (ASSIST)
  • 批准号:
    1160483
  • 财政年份:
    2012
  • 资助金额:
    $ 30万
  • 项目类别:
    Cooperative Agreement
SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices
SGER:用于纳米颗粒器件原位研究的新型超快速加热平台
  • 批准号:
    0811137
  • 财政年份:
    2008
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Scalable Strained Silicon MOSFET Technology with Advanced Gatestack Materials
采用先进栅极堆叠材料的可扩展应变硅 MOSFET 技术
  • 批准号:
    0301238
  • 财政年份:
    2003
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
PECASE: Novel Approaches for Integration of Vertical Si Nanoelectronics
PECASE:垂直硅纳米电子集成的新方法
  • 批准号:
    0093815
  • 财政年份:
    2001
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
POWRE: Nano-gate Engineering for Ultra-fast CMOS devices
POWRE:超快 CMOS 器件的纳米门工程
  • 批准号:
    0074800
  • 财政年份:
    2000
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Advanced Gate Dielectrics for Silicon Carbide Metal Oxide Semiconductor Application
用于碳化硅金属氧化物半导体应用的先进栅极电介质
  • 批准号:
    9906255
  • 财政年份:
    1999
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant

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