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SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices

SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices
SGER:用于纳米颗粒器件原位研究的新型超快速加热平台
批准号:
0811137
负责人:
Veena Misra
金额:
$6.74万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-03-01 至 2009-02-28

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中文摘要
翻译
该提案的目的是研究一种高度创新的途径,通过革命性的超薄SiC膜平台实时形成和表征纳米颗粒电子器件,该平台可提供超快温度(1200摄氏度/毫秒)。这种方法可以彻底改变纳米结构的形成,从而大大增加纳米器件的商业化潜力。近年来,纳米粒子因其在存储器件、化学生物传感器和自旋电子学方面的潜在应用而引起了极大的兴趣。然而,纳米颗粒商业化面临的最大挑战之一是形成致密、均匀和单分散的薄膜。无法控制退火条件的动力学,如温度、斜坡速率和冷却速率,通常用于形成纳米颗粒,可能导致不受控制的过程,导致不期望的尺寸和变化。在毫秒范围内的动力学研究提供了对纳米结构形成的新见解,这将直接影响器件的特性。完全制造的纳米级器件将直接集成在半导体膜上加热,同时进行电气表征。纳米级mosfet和双端库仑阻塞器件将被制造。测量C-V和I-V曲线的阶跃周期性、阶跃锐度、电荷储存度和库仑阻挡窗等特性。有了这个系统,一百多个退火/测量步骤最终可以在几秒钟内实现。在单个晶圆上制造多个分立加热器,可以进一步加快学习周期。更广泛的影响:这些知识将影响存储器、传感器、光子学和生物电子学领域。由于占地面积小,易于访问,因此这里提出的系统非常适合增强教育模块。我们将使用该系统作为本科生的可视化工具,实时地将纳米结构的尺寸和形状的动态变化与器件特性联系起来。更广泛地使用受控和有组织的纳米结构将带来商业化的机会,并给纳米技术的投资带来高回报。
英文摘要
Abstract-Veena Misra-SGERThe objective of this proposal is to investigate a highly innovative route inthe real-time formation and characterization of nanoparticle based electronic devices viaa revolutionary ultra thin SiC membrane platform that provides ultra-fast temperaturerates (1200degree centigrade/msec). This approach can revolutionize nanostructureformation which can substantially increase the commercialization potential ofnanodevices.Intellectual Merit:In recent years, nanoparticles have gained tremendous interest for their potential use in memory devices, chem-bio sensors and spintronics. However, one of the biggest challenges facing nanoparticle commercialization is the formation of dense, uniform and mono-disperse films. The inability to control kinetics of the anneal conditions, such as temperatures, ramp rates and cool down rates, typically used to form nanoparticles can lead to uncontrolled process leading to undesired sizes and variations. The study of kinetics at the millisecond range affords novel insight into nanostructure formation which will directly influence the device characteristics. Fully fabricated nanoscale devices will be integrated directly on the semiconductor membrane heating while undergoing simultaneous electrical characterization. Nanoscale MOSFETs and two-terminal coulomb blockade devices will be fabricated. The features of C-V and I-V curves, such as periodicity of steps, sharpness of steps, degree of charge storage and coulomb blockade window will be measured. With this system, over a hundred anneal/measurement steps can ultimately be achieved in a matter of seconds. Multiple discrete heaters, fabricated on a single wafer, can further expedite cycles of learning.Broader Impact: This knowledge will impact the fields of memories, sensors, photonics and bioelectronics. The system being proposed here is highly amenable to enhance education modules due to its small footprint and ease of access. We will use this system as a visualization tool for undergraduates to correlate dynamic changes in size and shape of nanostructures to device characteristics in real-time. Broader use of controlled and organized nanostructures will result in commercialization opportunities and give high return on investment in nanotechnology.
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EAGER: A novel route for high activation of implanted p-type regions in vertical Gallium Nitride devices.
  • 批准号:
    2230090
  • 项目类别:
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  • 资助金额:
    $13.74万
  • 财政年份:
    2022
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    1407202
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  • 资助金额:
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    2014
  • 负责人:
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  • 批准号:
    1160483
  • 项目类别:
    Cooperative Agreement
  • 资助金额:
    $1850.0万
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    2012
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  • 项目类别:
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  • 财政年份:
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  • 负责人:
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