SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices

摘要-Veena Misra-SGER该提案的目的是通过革命性的超薄SiC膜平台，提供超快的温度速率（1200摄氏度/毫秒），研究基于纳米颗粒的电子器件的实时形成和表征的高度创新路线。 这种方法可以彻底改变nanostructureformation，可以大大提高商业化潜力ofnanodevice.Intellectual优点：近年来，纳米粒子已经获得了巨大的兴趣，他们在存储设备，化学生物传感器和自旋电子学的潜在用途。然而，纳米粒子商业化面临的最大挑战之一是形成致密、均匀和单分散的薄膜。不能控制通常用于形成纳米颗粒的退火条件的动力学，例如温度、升温速率和冷却速率，可能导致不受控制的过程，从而导致不期望的尺寸和变化。在毫秒范围内的动力学研究提供了新的洞察纳米结构的形成，这将直接影响设备的特性。完全制造的纳米级器件将直接集成在半导体膜加热，同时进行电特性。纳米级MOSFET和二端库仑阻塞器件将被制作。测量C-V和I-V曲线的特征，如台阶的周期性、台阶的尖锐性、电荷储存程度和库仑阻塞窗口。有了这个系统，最终可以在几秒钟内完成一百多个退火/测量步骤。多个分立的加热器，制造在一个晶圆上，可以进一步加快学习周期。更广泛的影响：这一知识将影响存储器，传感器，光子学和生物电子学领域。这里提议的系统由于占地面积小和易于访问，非常适合加强教育模块。我们将使用这个系统作为一个可视化工具，为本科生相关的动态变化的尺寸和形状的纳米结构的设备特性在实时。更广泛地使用受控和有组织的纳米结构将带来商业化机会，并为纳米技术的投资带来高回报。

Abstract-Veena Misra-SGERThe objective of this proposal is to investigate a highly innovative route inthe real-time formation and characterization of nanoparticle based electronic devices viaa revolutionary ultra thin SiC membrane platform that provides ultra-fast temperaturerates (1200degree centigrade/msec). This approach can revolutionize nanostructureformation which can substantially increase the commercialization potential ofnanodevices.Intellectual Merit:In recent years, nanoparticles have gained tremendous interest for their potential use in memory devices, chem-bio sensors and spintronics. However, one of the biggest challenges facing nanoparticle commercialization is the formation of dense, uniform and mono-disperse films. The inability to control kinetics of the anneal conditions, such as temperatures, ramp rates and cool down rates, typically used to form nanoparticles can lead to uncontrolled process leading to undesired sizes and variations. The study of kinetics at the millisecond range affords novel insight into nanostructure formation which will directly influence the device characteristics. Fully fabricated nanoscale devices will be integrated directly on the semiconductor membrane heating while undergoing simultaneous electrical characterization. Nanoscale MOSFETs and two-terminal coulomb blockade devices will be fabricated. The features of C-V and I-V curves, such as periodicity of steps, sharpness of steps, degree of charge storage and coulomb blockade window will be measured. With this system, over a hundred anneal/measurement steps can ultimately be achieved in a matter of seconds. Multiple discrete heaters, fabricated on a single wafer, can further expedite cycles of learning.Broader Impact: This knowledge will impact the fields of memories, sensors, photonics and bioelectronics. The system being proposed here is highly amenable to enhance education modules due to its small footprint and ease of access. We will use this system as a visualization tool for undergraduates to correlate dynamic changes in size and shape of nanostructures to device characteristics in real-time. Broader use of controlled and organized nanostructures will result in commercialization opportunities and give high return on investment in nanotechnology.