Scalable Strained Silicon MOSFET Technology with Advanced Gatestack Materials
采用先进栅极堆叠材料的可扩展应变硅 MOSFET 技术
基本信息
- 批准号:0301238
- 负责人:
- 金额:$ 27万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-07-01 至 2007-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The primary objective of this proposal is to demonstrate a scalable strained silicon technology that is integrated with advanced front-end processes. The scalability of the proposed approach is due to its applicability not only in planar bulk devices but also in a) strained silicon directly on oxide (SSOI) and in b) a novel double gate strained MOSFET (SSDG) that will be described in the proposal. The research will focus on strained Si layers since mobility enhancement can be obtained in both p-channel and n-channel devices. The program will consist of three research thrusts: a) Epitaxy of Strained Silicon layers, b) Advanced Gate stacks on Strained Silicon Layers and c) Device Demonstration. Since ITRS predicts the need for enhanced channel mobility by 2010, we believe initiation of this research effort in a timely manner is especially critical. The program is expected to stimulate innovation in development of alternative gate stack and junction processes suitable for strained layers. The program will take advantage of the diverse backgrounds of its investigators who have been working on advanced materials and processes for gate stacks, ultra-shallow junctions and low temperature epitaxy of Si and Si1-xGex alloys.In the education and outreach activities, we plan to provide an enriching research experience for graduate students with emphasis on nanoscale materials and devices and establish a collaborative and interdisciplinary group research environment. We will also create a course on beyond planar devices for the graduate curriculum. Opportunities will also be provided for undergraduate students to get involved in the research through existing REU programs.
本提案的主要目标是展示一种可扩展的应变硅技术,该技术与先进的前端工艺相集成。所提出的方法的可扩展性是由于其不仅适用于平面体器件,而且适用于a)直接在氧化物上的应变硅(SSOI)和B)一种新型的双栅应变MOSFET(SSDG),这将在提案中描述。由于应变硅层在p沟道和n沟道器件中都可以获得迁移率的增强,因此研究将集中在应变硅层上。该计划将包括三个研究重点:a)应变硅层的外延,B)应变硅层上的先进栅极叠层和c)器件演示。由于ITRS预测到2010年需要增强通道移动性,我们认为及时启动这项研究工作尤为重要。该计划预计将刺激创新的替代栅极堆叠和结工艺的发展适用于应变层。该计划将利用其研究人员的不同背景,他们一直致力于栅极堆栈,超浅结和Si和Si 1-xGex合金的低温外延的先进材料和工艺。在教育和推广活动中,我们计划为研究生提供丰富的研究经验,重点是纳米材料和器件,并建立一个合作和跨学科的小组研究环境我们还将为研究生课程开设一门关于超越平面器件的课程。还将为本科生提供机会,通过现有的REU计划参与研究。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Veena Misra其他文献
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
- DOI:
10.1007/s11664-001-0165-1 - 发表时间:
2001-12-01 - 期刊:
- 影响因子:2.500
- 作者:
Veena Misra;Manoj Kulkarni;Huicai Zhong - 通讯作者:
Huicai Zhong
Hybrid silicon/molecular FETs: a study of the interaction of redox-active molecules with silicon MOSFETs
混合硅/分子 FET:氧化还原活性分子与硅 MOSFET 相互作用的研究
- DOI:
- 发表时间:
2006 - 期刊:
- 影响因子:2.4
- 作者:
S. Gowda;G. Mathur;Qiliang Li;S. Surthi;Veena Misra - 通讯作者:
Veena Misra
High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide
- DOI:
10.1007/bf02666631 - 发表时间:
1996-03-01 - 期刊:
- 影响因子:2.500
- 作者:
Veena Misra;Xiaoli Xu;Brian E. Hornung;Richard T. Kuehn;Donald S. Miles;John R. Hauser;Jimmie J. Wortman - 通讯作者:
Jimmie J. Wortman
Development of plasmonics-active SERS substrates on a wafer scale for chemical and biological sensing applications
开发用于化学和生物传感应用的晶圆级等离子体活性 SERS 基底
- DOI:
10.1109/iedm.2008.4796732 - 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
A. Dhawan;Yan Du;Hsin;Donovan N. Leonard;Veena Misra;Mehmet C. Öztürk;M. Gerhold;Tuan Vo - 通讯作者:
Tuan Vo
Properties of Ta–Mo alloy gate electrode for n-MOSFET
- DOI:
10.1007/s10853-005-2108-3 - 发表时间:
2005-05-01 - 期刊:
- 影响因子:3.900
- 作者:
Chung Keun Lee;Jae Young Kim;Shin Nam Hong;Huicai Zhong;Bei Chen;Veena Misra - 通讯作者:
Veena Misra
Veena Misra的其他文献
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{{ truncateString('Veena Misra', 18)}}的其他基金
EAGER: A novel route for high activation of implanted p-type regions in vertical Gallium Nitride devices.
EAGER:一种在垂直氮化镓器件中高度激活注入 p 型区域的新途径。
- 批准号:
2230090 - 财政年份:2022
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
Wearable Nanodevices, Linking Health and Environment: RET in Engineering and Computer Science Site
可穿戴纳米设备,连接健康与环境:工程和计算机科学网站中的 RET
- 批准号:
1407202 - 财政年份:2014
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
NSF Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST)
NSF 纳米系统先进自供电集成传感器和技术系统工程研究中心 (ASSIST)
- 批准号:
1160483 - 财政年份:2012
- 资助金额:
$ 27万 - 项目类别:
Cooperative Agreement
SGER: Novel Ultra Fast Heating Platform for In-Situ Study of Nanoparticle Based Devices
SGER:用于纳米颗粒器件原位研究的新型超快速加热平台
- 批准号:
0811137 - 财政年份:2008
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
Collaborative Research: High Density Metal and Semiconductor Nanoparticles for Memory and Photonic Applications
合作研究:用于存储器和光子应用的高密度金属和半导体纳米颗粒
- 批准号:
0802157 - 财政年份:2008
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
PECASE: Novel Approaches for Integration of Vertical Si Nanoelectronics
PECASE:垂直硅纳米电子集成的新方法
- 批准号:
0093815 - 财政年份:2001
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
POWRE: Nano-gate Engineering for Ultra-fast CMOS devices
POWRE:超快 CMOS 器件的纳米门工程
- 批准号:
0074800 - 财政年份:2000
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
Advanced Gate Dielectrics for Silicon Carbide Metal Oxide Semiconductor Application
用于碳化硅金属氧化物半导体应用的先进栅极电介质
- 批准号:
9906255 - 财政年份:1999
- 资助金额:
$ 27万 - 项目类别:
Standard Grant
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