Scalable Strained Silicon MOSFET Technology with Advanced Gatestack Materials

本提案的主要目标是展示一种可扩展的应变硅技术，该技术与先进的前端工艺相集成。所提出的方法的可扩展性是由于其不仅适用于平面体器件，而且适用于a）直接在氧化物上的应变硅（SSOI）和B）一种新型的双栅应变MOSFET（SSDG），这将在提案中描述。由于应变硅层在p沟道和n沟道器件中都可以获得迁移率的增强，因此研究将集中在应变硅层上。该计划将包括三个研究重点：a）应变硅层的外延，B）应变硅层上的先进栅极叠层和c）器件演示。由于ITRS预测到2010年需要增强通道移动性，我们认为及时启动这项研究工作尤为重要。该计划预计将刺激创新的替代栅极堆叠和结工艺的发展适用于应变层。该计划将利用其研究人员的不同背景，他们一直致力于栅极堆栈，超浅结和Si和Si1-xGex合金的低温外延的先进材料和工艺。在教育和推广活动中，我们计划为研究生提供丰富的研究经验，重点是纳米材料和器件，并建立一个合作和跨学科的小组研究环境我们还将为研究生课程开设一门关于超越平面器件的课程。还将为本科生提供机会，通过现有的REU计划参与研究。

The primary objective of this proposal is to demonstrate a scalable strained silicon technology that is integrated with advanced front-end processes. The scalability of the proposed approach is due to its applicability not only in planar bulk devices but also in a) strained silicon directly on oxide (SSOI) and in b) a novel double gate strained MOSFET (SSDG) that will be described in the proposal. The research will focus on strained Si layers since mobility enhancement can be obtained in both p-channel and n-channel devices. The program will consist of three research thrusts: a) Epitaxy of Strained Silicon layers, b) Advanced Gate stacks on Strained Silicon Layers and c) Device Demonstration. Since ITRS predicts the need for enhanced channel mobility by 2010, we believe initiation of this research effort in a timely manner is especially critical. The program is expected to stimulate innovation in development of alternative gate stack and junction processes suitable for strained layers. The program will take advantage of the diverse backgrounds of its investigators who have been working on advanced materials and processes for gate stacks, ultra-shallow junctions and low temperature epitaxy of Si and Si1-xGex alloys.In the education and outreach activities, we plan to provide an enriching research experience for graduate students with emphasis on nanoscale materials and devices and establish a collaborative and interdisciplinary group research environment. We will also create a course on beyond planar devices for the graduate curriculum. Opportunities will also be provided for undergraduate students to get involved in the research through existing REU programs.