Scalable Strained Silicon MOSFET Technology with Advanced Gatestack Materials

这项提议的主要目标是展示一种可扩展的应变硅技术，该技术与先进的前端工艺相集成。该方法的可扩展性是因为它不仅适用于平面体器件，而且还适用于a)氧化物上直接应变硅(SSOI)和b)将在提案中描述的新型双栅应变MOSFET(SSDG)。由于在p沟道和n沟道器件中都可以获得迁移率增强，因此研究将集中在应变硅层上。该计划将由三个研究项目组成：a)应变硅层的外延，b)应变硅层上的先进栅极堆叠和c)器件演示。由于ITRS预测到2010年需要增强渠道移动性，我们认为及时启动这项研究工作尤为关键。该计划预计将刺激开发适用于应变层的替代栅堆叠和结工艺的创新。该计划将利用其研究人员的不同背景，他们一直致力于硅和Si1-xGex合金的栅堆叠、超浅结和低温外延的先进材料和工艺。在教育和推广活动中，我们计划为研究生提供丰富的研究经验，重点是纳米材料和器件，并建立一个协作和跨学科的小组研究环境。我们还将为研究生课程创建一门关于Beyond Plane Device的课程。还将通过现有的REU项目为本科生提供参与研究的机会。

The primary objective of this proposal is to demonstrate a scalable strained silicon technology that is integrated with advanced front-end processes. The scalability of the proposed approach is due to its applicability not only in planar bulk devices but also in a) strained silicon directly on oxide (SSOI) and in b) a novel double gate strained MOSFET (SSDG) that will be described in the proposal. The research will focus on strained Si layers since mobility enhancement can be obtained in both p-channel and n-channel devices. The program will consist of three research thrusts: a) Epitaxy of Strained Silicon layers, b) Advanced Gate stacks on Strained Silicon Layers and c) Device Demonstration. Since ITRS predicts the need for enhanced channel mobility by 2010, we believe initiation of this research effort in a timely manner is especially critical. The program is expected to stimulate innovation in development of alternative gate stack and junction processes suitable for strained layers. The program will take advantage of the diverse backgrounds of its investigators who have been working on advanced materials and processes for gate stacks, ultra-shallow junctions and low temperature epitaxy of Si and Si1-xGex alloys.In the education and outreach activities, we plan to provide an enriching research experience for graduate students with emphasis on nanoscale materials and devices and establish a collaborative and interdisciplinary group research environment. We will also create a course on beyond planar devices for the graduate curriculum. Opportunities will also be provided for undergraduate students to get involved in the research through existing REU programs.