Antimony-based self-organized quantum dots: epitaxial growth, characterization, and photonics at the nanoscale

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The driving forces for future technologies have increasingly relied on the exploration of novel nanoscale materials. Antimony (Sb)-based self-organized semiconductor nanostructures, such as InAs(Sb)/InGaAsSb and InSb(As)/InAs quantum dots and nanowires, a class of novel materials with tremendous importance for infrared and terahertz photonics, have remained largely unexplored. In this program, the PI will investigate the growth and fundamental characteristics of such nanostructures and develop near-, mid-, and far-infrared nanophotonic devices, providing enabling solutions for critical technologies in communications, spectroscopic sensing, medical imaging and future quantum computing. In the short-term, the PI will develop 1.55 µm InAs(Sb)/InGaAsSb quantum dot lasers and amplifiers on GaAs that can significantly outperform their quantum well counterparts, for applications in fiber optical communications. In the medium-term, the PI will investigate the epitaxial growth and characterization of Sb-based mid-infrared quantum dot heterostructures and extend, for the first time, the demonstrated InAs quantum dot technology developed by the PI and other researchers, to the mid- and far-infrared frequency ranges. The third focus is the development of novel quantum dot and nanowire heterostructures with precisely controlled properties by utilizing the novel technique of selective area growth on nano-patterned substrates, with the long-term goal is to realize electrically-injected ultrahigh-speed nanoscale lasers and high-efficiency single photon sources, fundamental building blocks for future quantum computing and information processing systems.