Correlation of Atomic Level Growth, Characterization and Electronic Properties of Epitaxial Ferromagnetic Alloys on Compound Semiconductors

化合物半导体上外延铁磁合金的原子级生长、表征和电子性能的相关性

• 批准号: 0913561
• 负责人: Christopher Palmstrom
• 金额: $ 13.58万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-06-01 至 2010-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0913561&HistoricalAwards=false
• 关键词: Correlation; Atomic; Level; Growth; Characterization

Technical: Theoretical studies have suggested that the spin polarization of magnetic materials is very sensitive to compositional changes and defects at surfaces and interfaces. This sensitivity to composition and defects is believed to be responsible for limiting the performance of spin transport based devices and the aim of this proposal is to experimentally determine these correlations. Single crystal ferromagnetic alloys will be grown by molecular beam epitaxy (MBE) on atomically clean, well characterized, MBE-grown semiconductor surfaces. In-situ deposition and annealing will be used to modify the surface composition and structure. In-situ scanning tunneling microscopy (STM), reflection high energy electron diffraction, low energy electron diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and magneto optic Kerr effect (MOKE) measurements will be combined with ex-situ Rutherford backscattering, high resolution x-ray diffraction, transmission electron microscopy (TEM), vibration sample (VSM) and superconducting quantum interference device (SQUID) magnetometry to obtain a detailed understanding of the atomic level structural, chemical and magnetic properties. The spin polarization will be determined by measurements of in-situ fabricated superconductor-ferromagnetic metal tunnel junctions, in-situ fabricated ferromagnetic metal tunnel junctions, and in-situ point contact Andreev reflections (PCAR). In-situ PCAR is advantageous for determining the effect of surface composition and structure, as it does not require deposition of a tunnel barrier material on top of the ferromagnetic layer, which is likely to change the surface properties. It also has the advantage that the spin polarization of the same sample can be measured sequentially after surface modification. By comparing the three spin polarization measurements, the influence the surfaces, interfaces and tunnel barrier on the spin transport in tunnel junctions will be determined experimentally. Non-Technical: The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities for potential next generation electronic/spintronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The interdisciplinary nature of the project including magnetism, materials science, molecular beam epitaxy, surface science, low-temperature physics, superconductivity, ultra high vacuum technology, and electron microscopy provides a unique training ground for future materials scientists at the undergraduate and graduate levels. Students will have opportunities and be trained and educated in all aspects of these interdisciplinary fields. The ability to gain a fundamental understanding of how atomic structure at surfaces, interfaces and in the bulk of the materials affects magnetic and spin properties of thin films will be a critical component of their education. The PI has a strong commitment to assisting diversity and to training students and postdoctoral associates to collaborate with other students and scientists. Opportunities provided by collaborative projects make this training unique and important to future materials scientists. Currently, the PI's group consists of 4 graduate students and two postdoctoral associates from different ethnic backgrounds, including US, Germany, Taiwan, India, and Korea. Half of the students are women. Broadening the range of areas in which students and postdoctoral associates have knowledge enhances their future career choices. Students will gain invaluable exposure to state of the art atomic level characterization techniques and learn what information may or may not be gained through various techniques. The PI has been successful in involving a balance of male (50%) and female (50%) undergraduate students from four-year colleges to participate in summer research and training programs and will continue these efforts. Emphasis is made on developing interactive and collaborative skills through collaborations and research interactions with groups of complementary expertise.

技术支持：理论研究表明，磁性材料的自旋极化对表面和界面处的成分变化和缺陷非常敏感。这种对组成和缺陷的敏感性被认为是限制基于自旋输运的器件的性能的原因，并且该提议的目的是通过实验确定这些相关性。单晶铁磁合金将通过分子束外延（MBE）生长在原子级清洁的，良好表征的MBE生长的半导体表面上。原位沉积和退火将用于修改表面组成和结构。原位扫描隧道显微镜（STM）、反射高能电子衍射、低能电子衍射、X射线光电子能谱、俄歇电子能谱和磁光克尔效应（MOKE）测量将与非原位卢瑟福背散射、高分辨率X射线衍射、透射电子显微镜（TEM）、振动样品（VSM）和超导量子干涉仪（SQUID）的磁力测量，以获得原子水平的结构，化学和磁性的详细了解。自旋极化将通过测量原位制造的超导铁磁金属隧道结、原位制造的铁磁金属隧道结和原位点接触Andreev反射（PCAR）来确定。原位PCAR对于确定表面组成和结构的影响是有利的，因为它不需要在铁磁层的顶部上沉积隧道势垒材料，这可能改变表面性质。它还具有的优点是，相同的样品的自旋极化可以在表面改性后连续测量。通过比较三种自旋极化测量方法，确定了隧道结中表面、界面和隧道势垒对自旋输运的影响。非技术性：该项目涉及具有高度技术相关性的材料科学专题领域的基础研究问题。该研究将在基础层面上为潜在的下一代电子/自旋电子器件的新理解和能力贡献基础材料科学知识。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目的跨学科性质，包括磁学，材料科学，分子束外延，表面科学，低温物理，超导，超高真空技术和电子显微镜，为未来的材料科学家在本科和研究生水平提供了一个独特的培训基地。学生将有机会在这些跨学科领域的各个方面接受培训和教育。获得表面，界面和材料中的原子结构如何影响薄膜的磁性和自旋特性的基本理解的能力将是他们教育的关键组成部分。PI坚定地致力于协助多样性，并培训学生和博士后同事与其他学生和科学家合作。合作项目提供的机会使这种培训对未来的材料科学家来说是独特和重要的。目前，PI的团队由来自不同种族背景的4名研究生和2名博士后组成，包括美国，德国，台湾，印度和韩国。一半的学生是女性。扩大学生和博士后研究员的知识领域范围可以增强他们未来的职业选择。学生将获得最先进的原子级表征技术的宝贵经验，并了解通过各种技术可以或不可以获得哪些信息。PI成功地让四年制大学的男女本科生（各占50%）参加暑期研究和培训方案，并将继续努力。重点是通过与互补专业知识群体的合作和研究互动来发展互动和协作技能。