Electrical control and read-out of color centers in diamond

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This project aims at the development of the technology and the demonstration of proof-of-concepts for the electrical control and read-out of spin states of color centers in diamond, with a focus on nitrogen-vacancy (NV) centers. The electrical control of the charge state of color centers in diamond will be explored via two different concepts. On the one hand, charge injection and applied electric fields generated in local p-n hetero Heterodiodes based on nanowires of group Ill-nitrides on diamond will be employed under forward or reverse bias conditions to modify the charge state of color centers positioned in the vicinity of the heterojunction. ln a second development, we will explore the use of field-effect transistors based on surface conductive diamond to electrically control the surface band bending and, thus, the charge state of color centers implanted near the surface. Furthermore, this project also aims at demonstrating the electric readout of the spin states of NV centers in diamond via electrically detected magnetic resonance (EDMR) spectroscopy. This project consists of three main activity blocks: the development of novel architectures based on field-effect devices for the electrical control of color centers in diamond, the fabrication of AIGaN/diamond p-n heterodiodes via molecular beam epitaxy and the investigation of spindependent electronic transport in these devices.