MRI: Acquisition of a Hybrid Diamond/III-N Synthesis Cluster Tool

MRI：获得混合金刚石/III-N 合成簇工具

• 批准号: 0923215
• 负责人: Ezekiel Johnston-Halperin
• 金额: $ 42.13万
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-10-01 至 2012-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0923215&HistoricalAwards=false
• 关键词: MRI; Acquisition; Hybrid; Diamond; III

0923215Johnston-HalperinOhio State U. Res. Fdn.Technical Summary: Wide bandgap semiconductors, and in particular III-Ns and diamond, are emerging as a powerful force for innovation across a wide spectrum of science and technology. This breadth of potential is captured by the extraordinary diversity of the interdisciplinary team assembled for this proposal, with research interests ranging over 15 orders of magnitude in energy (from ~1 meV to ~ 1,000 TeV), 13 orders of magnitude in time (~ 100 fs to ~ 1 ms), and 11 orders of magnitude in length (from ~ 1 nm to ~ 10 cm). This diversity provides a unique and powerful opportunity, by optimizing a relatively modest set of material parameters: electron mobility, spin relaxation time, electron-hole recombination time and structural quality, it is possible to have a transformative impact across a truly broad front of leading edge research. This optimization will require the rapid development of these emerging materials, necessitating a tight coupling between high quality materials synthesis and precise materials characterization informed by a fundamental understanding of the science underlying these diverse applications. The collaborative network presented here, including the PIs and both on-site and off-site collaborators, posses the necessary expertise as well as the necessary infrastructure in materials characterization to exploit this unique opportunity; the only piece lacking is the appropriate infrastructure for materials synthesis. As a result, the acquisition of the hybrid diamond/III-N synthesis cluster tool proposed here will have an immediate impact on a wide spectrum of active research programs as well as providing interdisciplinary collaborations with the necessary infrastructure to successfully compete in this rapidly developing area of materials science. The proposed tool will consist of two growth chambers, one optimized for microwave-plasma chemical vapor deposition (MPCVD) of diamond films, and the other optimized for ammonia-based molecular beam epitaxy (MBE) of III-N epilayers. The chambers are linked by an air-free glove box and an ultra-high vacuum (UHV) transfer line, allowing for in situ sample transfer and high quality heterostructure growth. Finally, the diversity of this collaboration will lead directly to the training of graduate and undergraduate students who are optimally positioned to take advantage of increasingly interdisciplinary opportunities in both the academic and industrial workforce.Layman Summary: The objective of this project is to establish a materials fabrication facility to investigate the properties of new nanoscale materials based on diamond and III-N semiconductors. Wide bandgap semiconductors, and in particular III-Ns and diamond, are emerging as a powerful force for innovation across a wide spectrum of science and technology. Research in this area will benefit industries including magnetoelectronics/spintronics, high-speed electronics, solid state lighting, photovoltaics, and energy-efficient transportation. This breadth of potential is captured by the extraordinary diversity of the interdisciplinary team assembled for this proposal, with affiliations including Materials Science and Engineering, Electrical and Computer Engineering, Condensed Matter Physics and High Energy Physics and research interests ranging over 15 orders of magnitude in energy, 13 orders of magnitude in time and 11 orders of magnitude in length. For example, this variation is equivalent to temperatures from 10° C above absolute zero to 1 million times hotter than the sun, the difference in time between 1 millionth of a second and the age of the earth and sizes ranging from several atoms to the size of a cell phone. As a consequence, the acquisition of the hybrid diamond/III-N synthesis cluster tool proposed here will have an immediate impact on a wide spectrum of active research programs, laying the groundwork for fundamental discoveries and new technology and providing training for graduate and undergraduate students in emerging interdisciplinary applications of fundamental materials science research.

0923215Johnston-HalperinOhio State美国联邦调查局技术概述：宽带隙半导体，特别是III-Ns和金刚石，正在成为广泛的科学和技术创新的强大力量。这一潜力的广度被跨学科团队的非凡多样性所捕捉，他们的研究兴趣范围包括15个数量级的能量（从~ 1mev到~ 1000tev）， 13个数量级的时间（~ 100fs到~ 1ms），以及11个数量级的长度（从~ 1nm到~ 10cm）。这种多样性提供了一个独特而强大的机会，通过优化一组相对适度的材料参数：电子迁移率，自旋弛豫时间，电子-空穴复合时间和结构质量，有可能在真正广泛的前沿研究中产生变革性的影响。这种优化将需要这些新兴材料的快速发展，需要高质量材料合成和精确材料表征之间的紧密耦合，这需要对这些不同应用背后的科学的基本理解。这里展示的合作网络，包括pi和现场和非现场合作者，拥有必要的专业知识和必要的材料表征基础设施，以利用这一独特的机会；唯一缺少的是适当的材料合成基础设施。因此，本文提出的混合金刚石/III-N合成簇工具的获得将对广泛的活跃研究计划产生直接影响，并提供跨学科合作和必要的基础设施，以成功地在这一快速发展的材料科学领域竞争。该工具将由两个生长室组成，一个优化用于微波等离子体化学气相沉积（MPCVD）金刚石薄膜，另一个优化用于氨基分子束外延（MBE） III-N涂层。这些腔室由无空气手套箱和超高真空（UHV）传输线连接，允许原位样品转移和高质量异质结构生长。最后，这种合作的多样性将直接导致研究生和本科生的培训，他们处于最佳位置，可以利用学术和工业劳动力中越来越多的跨学科机会。摘要：本项目的目标是建立一个材料制造设备，以研究基于金刚石和III-N半导体的新型纳米材料的性能。宽带隙半导体，特别是III-Ns和金刚石，正在成为广泛的科学和技术创新的强大力量。该领域的研究将有利于包括磁电子/自旋电子学、高速电子、固态照明、光伏和节能运输在内的行业。这种潜力的广度被跨学科团队的非凡多样性所捕获，这些团队包括材料科学与工程，电气与计算机工程，凝聚态物理和高能物理，研究兴趣范围超过15个数量级的能量，13个数量级的时间和11个数量级的长度。例如，这种变化相当于从绝对零度以上10°C到比太阳热100万倍的温度，相当于百万分之一秒和地球年龄之间的时间差异，大小从几个原子到手机大小不等。因此，本文提出的混合金刚石/III-N合成簇工具的获得将对广泛的活跃研究项目产生直接影响，为基础发现和新技术奠定基础，并为研究生和本科生提供基础材料科学研究新兴跨学科应用的培训。