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GOALI: Fabrication and Device Physics of Bit-Patterned Magnetic Recording Media

GOALI: Fabrication and Device Physics of Bit-Patterned Magnetic Recording Media
GOALI:位图磁记录介质的制造和器件物理
批准号:
0926027
负责人:
Dmitri Litvinov
金额:
$36.49万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-01 至 2015-08-31

项目摘要

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中文摘要
翻译
本研究概述了磁性位图介质的向下可扩展性,其定义目标是在大约3-4 nm的位尺寸下达到基本磁数据存储极限(即超顺磁极限),使用高各向异性磁性纳米颗粒在精密制造模板中的引导自组装。在这个项目过程中开发的技术将产生前所未有的能力,例如在一台台式电脑上满足世界上最大的公司的数据存储需求,或者在iPod上存储美国国会图书馆的全部内容!提出的研究的智力价值是多方面的,为引导自组装科学、用于高保真模板制造的自限制离子铣削机制以及高各向异性磁性纳米颗粒的合成提供了独特的见解。此外,这项工作将极大地扩展磁位图形介质记录物理的现有理论模型和实验测试。具体来说,真正的纳米结构阵列的可用性,将在这个项目的过程中开发出来,将使微磁形式主义的局限性的基础研究成为可能,微磁形式主义广泛用于磁性纳米结构的理论建模。拟议研究的更广泛的技术影响包括发展最先进的纳米制造技术,使我们目前的能力远远超出国际半导体技术路线图的预期目标。超高密度磁介质的可用性将使一系列变革性的磁数据存储应用成为可能,包括基于探针的数据存储设备,其中二维读/写纳米换能器阵列可用于定位图案磁盘上的位。低成本、低功耗和小尺寸是使探针存储成为移动应用(例如掌上电脑和移动电话)有吸引力的解决方案的关键属性。就对整个社会的广泛影响而言,休斯顿大学是博士学位授予机构中种族最多样化的学生群体。我们的大部分研究生都来自这个多元化的学生群体。此外,这里概述的研究计划将与现有的NSF-REU, RET, NUE和tk -12计划以及各种国家和州支持的计划相结合,研究人员积极加强对女性和未被充分代表的少数民族进入科学和工程领域的招募。该项目还将提供符合休斯顿大学本科课程的研究项目。此外,在这个项目过程中获得的知识将通过新采用的纳米工程辅修选项进行传播,该选项将于2009年秋季启动。
英文摘要
The research outlined in this proposal explores the downward scalability of magnetic bit-patterned media with a defined target of reaching the fundamental magnetic data storage limit (i.e., the superparamagnetic limit) at a bit size of approximately 3-4 nm using the guided self-assembly of highly anisotropic magnetic nanoparticles in precision-fabricated templates. The technology to be developed during the course of this project will give rise to unprecedented capabilities, such as meeting the data storage needs of the world's largest corporations on a single desktop computer, or storing the entire contents of the Library of Congress on an iPod! The intellectual merit of the proposed research is multi-faceted, offering unique insights to the science of guided self-assembly, to the mechanisms of the self-limiting ion milling for high-fidelity template fabrication, and to the synthesis of highly anisotropic magnetic nanoparticles. Furthermore, this work will dramatically expand current theoretical models and experimental testing in the recording physics of magnetic bit-patterned media. Specifically, the availability of genuine nanostructured arrays, which will be developed during the course of this project, will enable fundamental studies of the limits of the micromagnetic formalism widely used for the theoretical modeling of magnetic nanostructures.The broader technological impacts of the proposed research include the development of state-of-the-art nanofabrication technologies that expand our current capabilities far beyond the projected goals of the international semiconductor technology roadmap. The availability of ultra-high-density magnetic media will enable a range of transformative magnetic data-storage applications, including probe-based data storage devices in which a two-dimensional array of read/write nanotransducers can be used to address the bits on a patterned disk. Low cost, low power consumption, and small size are key attributes that make probe storage an attractive solution for mobile applications (e.g., hand-held computers and cellular telephones).With regard to broader impacts on society as a whole, the University of Houston serves the most ethnically diverse student body among doctoral-degree-granting institutions. It is from this diverse student body that the bulk of our graduate students are drawn. Furthermore, the research program outlined here will be integrated with existing NSF-REU, RET, NUE, and GK-12 programs as well as various national and state-supported programs in which the investigators actively enhance the recruitment of women and underrepresented minorities into the fields of science and engineering. The program will also provide research projects that will be compliant with the University of Houston's undergraduate Capstone program. Moreover, the knowledge gained over the course of this program will be disseminated through the newly adopted Nanoengineering Minor Option, which launches in the fall of 2009.
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