Wiring quantum dots - phase separation inducing new functionality

接线量子点——相分离带来新功能

• 批准号: 195150566
• 负责人: Professor Dr. Carsten Ronning
• 金额: --
• 依托单位: Institut für Festkörperelektronik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/195150566?language=en
• 关键词: Wiring; quantum; dots; phase; separation

Today, most modern technology relies mainly on materials with reduced dimensionalities, such as thin films (2D), nanowires (1D), and quantum dots (0D). An extreme success in synthesis, characterization, and application of the respective – but separated – material classes has been achieved within the past 30 years.In this research proposal we merge: (a) three young and important research groups out of Switzerland, Austria and Germany, as well as (b) two of the most important nanostructures for future applications: quantum dots and nanowires, which will result into nano-materials with superior functionality. The synthesis techniques will be based on the use of phase separation as a vehicle for creating inhomogeneities within particular nanowire materials. Three promising approaches will be investigated within our research: (i) synthesis of stochiometrically unstable compounds during growth, (ii) subsequent ion implantation beyond solubility limits, and (iii) controlled phase conversion by diffusion. The resulting “wired quantum dots” will need a comprehensive structural characterization using e.g. electron microscopy, X-Ray diffraction and Raman scattering so that the optimum synthesis parameters can be identified. The main focus of this project is the investigation of the correlation between the structure and functionality of the wired quantum dots, in order to enable novel electronic and photonic devices.A long term goal of the project includes indeed the realization of a proto-type light emitting diode device and an electrical memory transistor with high-performance properties.

今天，大多数现代技术主要依赖于降维材料，如薄膜(2D)、纳米线(1D)和量子点(0D)。在过去的30年里，在各自独立的材料类别的合成、表征和应用方面取得了巨大的成功。在这项研究计划中，我们合并了：(A)来自瑞士、奥地利和德国的三个年轻而重要的研究小组，以及(B)两个最重要的未来应用的纳米结构：量子点和纳米线，这将导致具有优异功能的纳米材料。合成技术将基于使用相分离作为在特定纳米线材料中制造不均匀的载体。在我们的研究中，将探索三种有希望的方法：(I)在生长过程中合成化学计量不稳定的化合物，(Ii)随后的离子注入超过溶解度限制，以及(Iii)通过扩散控制相转变。由此产生的“连线量子点”将需要使用电子显微镜、X射线衍射和拉曼散射等进行全面的结构表征，以便确定最佳的合成参数。该项目的主要重点是研究布线量子点的结构和功能之间的相关性，以实现新的电子和光子器件。该项目的长期目标确实包括实现具有高性能特性的原型发光二极管器件和电存储晶体管。

项目成果

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

Mn离子注入GaAs:Zn纳米线中的磁阻

• DOI: 10.1063/1.4870423
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: W. Paschoal Jr;S. Kumar;D. Jacobsson;A. Johannes;V. Jain;C. M. Canali;A. Pertsova;C. Ronning;K. A. Dick;L. Samuelson;H. Pettersson
• 通讯作者: H. Pettersson

Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

• DOI: 10.1088/0022-3727/47/39/394003
• 发表时间: 2014-10-01
• 期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• 影响因子: 3.4
• 作者: Johannes, A.;Noack, S.;Ronning, C.
• 通讯作者: Ronning, C.

A general approach toward shape-controlled synthesis of silicon nanowires.

形状控制合成硅纳米线的通用方法

• DOI: 10.1021/nl303152b
• 发表时间: 2013
• 期刊: Nano letters
• 影响因子: 10.8
• 作者: W. Molnar;A. Lugstein;P. Pongratz;M. Seyring;M. Rettenmayr;C. Borschel;C. Ronning;N. Auner;C. Bauch;E. Bertagnolli
• 通讯作者: E. Bertagnolli