Ion beam doping of semiconductor nanowires

半导体纳米线的离子束掺杂

• 批准号: 5428711
• 负责人: Professor Dr. Carsten Ronning
• 金额: --
• 依托单位: Arbeitsgruppe Experimentelle Festkörperphysik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2004
• 资助国家: 德国
• 起止时间: 2003-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5428711?language=en
• 关键词: Ion; beam; doping; semiconductor; nanowires

The aim of this research project is the modification and doping of very small one-dimensional structures, so called "nanowires", made out of semiconducting materials using energetic ion beams. Nanowires play a major rule within the area of nanotechnology and are usually synthesized by thermal evaporation, a method that will be applied within this research study. On one hand, the prepared simiconducting nanowire will be modified using ion beams in order to control the overall morphology as well as to induce new connection points between different nanowires. On the other hand, electrically, optically, and magnetic active impurity atoms will be incorporated into the semiconducting nanowires by ion implantation for the realization of the two long-term aims: one-dimensional nanoscale (1) diodes or transistors and (2) spintronics.

这个研究项目的目的是对非常小的一维结构进行修饰和掺杂，即所谓的“纳米线”，由半导体材料制成，使用高能离子束。纳米线在纳米技术领域起着重要的作用，通常是通过热蒸发方法合成的，这种方法将在本研究中应用。一方面，利用离子束对制备的相似导电纳米线进行修饰，以控制其整体形貌，并在不同纳米线之间诱导新的连接点。另一方面，为了实现一维纳米级(1)二极管或晶体管和(2)自旋电子学的两个长期目标，将通过离子注入将电、光学和磁性活性杂质原子整合到半导体纳米线中。