Exploring the Mechanism of VLS Planar Nanowire Growth through Structural and Impurity Perturbation

通过结构和杂质扰动探索 VLS 平面纳米线生长机制

• 批准号: 1006581
• 负责人: Xiuling Li
• 金额: $ 39.54万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-06-01 至 2015-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006581&HistoricalAwards=false
• 关键词: Exploring; Mechanism; VLS; Planar; Nanowire

Technical: This project explores the mechanism of VLS (vapor-liquid-solid) planar III-V nanowire growth. The aim is to establish planar III-V nanowires as a viable nanotechnology building block on silicon, amorphous or plastic substrates for high performance nanophotonic and nanoelectronic applications in a scalable and integrable fashion. Such nanowires would be self-aligned, in-plane, nearly twin-plane defect free, and transfer-printable. The scope of the project includes: 1) positioning and alignment, 2) doping incorporation, and 3) heterojunction formation in III-V semi-conductor planar nanowires, using metalorganic chemical vapor deposition (MOCVD) through VLS, with a focus on GaAs, InGaAs, and InGaP material systems. Self-aligned planar III-V nanowires oriented in the 110 direction with no twin plane defects may open a new direction in III-V device possibilities, and represent fundamental advancement of semiconductor nanostructure growth and technology. Knowledge gained will also contribute to fundamental understanding of the materials science of 1D semiconductor epitaxial growth from nucleation, propagation, to dopant incorporation and activation at the nanometer scale. Non-technical: The project addresses basic research issues in a topical area of materials science with technological relevance. Results from the proposed research will be incorporated in the syllabus of a new course the PI is teaching on Semiconductor Nanotechnology. A semi-annual Student Research Symposium on Semiconductor Nanotechnology led by the PI will serve the dual purpose of dissemination of research results and training of students in public speaking and scientific presentation, The interdisciplinary nature of the project reflects materials science, electrical engineering, chemistry and physics, with potential technological impacts in electronics and photonics. By engaging students in such integrated research and education, the competence and leadership of our future workforce will be enhanced. By recruiting and retaining women engineers through creating and maintaining a sense of community and leading by example, the PI seeks to make a long lasting effect on the education and training of a broadly inclusive science and technology workforce. The outreach component of the project targeting elementary school girls will expose more young minds at a timely stage about the interesting challenges and opportunities in science and engineering careers.

技术：本项目探索了气-液-固(VLS)平面III-V纳米线生长的机理。其目的是在硅、非晶或塑料衬底上建立平面III-V纳米线作为可行的纳米技术构建块，以可扩展和可集成的方式用于高性能纳米光子学和纳米电子应用。这样的纳米线将是自对准的，在平面内，几乎没有双平面缺陷，并且可以转移印刷。该项目的范围包括：1)定位和取向，2)掺杂掺杂，3)III-V半导体平面纳米线中异质结的形成，通过VLS使用金属有机化学气相沉积(MOCVD)，重点是GaAs，InGaAs和InGaP材料系统。无孪晶面缺陷的110方向自对准平面III-V纳米线可能为III-V器件的发展开辟新的方向，代表着半导体纳米结构生长和技术的根本性进步。所获得的知识也将有助于基本理解一维半导体外延生长的材料科学，从成核、传播到掺杂和纳米级的激活。非技术性：该项目解决与技术相关的材料科学专题领域的基础研究问题。这项拟议研究的结果将被纳入国际半导体协会正在教授的一门新课程的教学大纲中。每半年举行一次的半导体纳米技术学生研究研讨会将兼具传播研究成果和培训学生公开演讲和科学陈述的双重目的，该项目的跨学科性质反映了材料科学、电气工程、化学和物理，以及对电子和光子学的潜在技术影响。通过让学生参与这种综合研究和教育，我们未来的劳动人口的能力和领导力将得到加强。通过创造和保持社区意识并以身作则来招聘和留住女工程师，国际工程师协会寻求对广泛包容的科学和技术劳动力的教育和培训产生长期持久的影响。该项目以小学女生为对象的外联部分将及时向更多的年轻人展示科学和工程职业中有趣的挑战和机会。