Collaborative:High Performance III-V Nanowire FETs Enabled by Controlled MOCVD Growth and ALD High-k Passivation

本研究的目的是探索一种新型的III-V半导体纳米线的生长机制和输运性质，并将其作为一种可行的纳米技术构件，以可扩展和可集成的方式适用于高性能的金属氧化物场效应晶体管器件。该方法是通过控制金属有机化学气相沉积在合适的衬底上生长具有精确取向和定制横向掺杂分布的纳米线晶体管，通过沉积高k电介质的原子层进行钝化，然后转移印刷到所需的衬底上进行异质集成。这项研究的学术价值在于利用自对准的平面几何结构为III-V器件的可能性开辟了一个新的方向；并从根本上促进了对一维半导体外延生长方面的理解，从成核、传播到纳米尺度的掺杂和激活，以及表面态和费米能级钉扎和解钉扎对纳米尺度载流子传输特性的影响。这项研究的更广泛影响是，通过使自下而上的纳米线生长方法与可制造的平面加工技术兼容，加速将基本纳米概念转化为工程解决方案；通过积极的指导和社区建设，吸引和留住女性工程师，并减少硕士学位水平的流失率；以及为小学女孩创造环境，让她们克服负面刻板印象，自信地走上科学和工程职业的轨道。

The objective of this research is to explore the growth mechanism and transport properties of a novel type of III-V semiconductor nanowires and establish it as a viable nanotechnology building block that is suitable for high performance metal-oxide field effect transistor devices in a scalable and integrable fashion. The approach is to grow nanowire transistor with precise alignment and tailored lateral doping profile through controlled metalorganic chemical vapor deposition on appropriate substrates, passivate by atomic layer deposited high-k dielectrics, and transfer-print to desired substrates for heterogeneous integration. The intellectual merit of this research is to open up a new direction in III-V device possibilities using the self-aligned planar geometry; and fundamentally advance the understanding of 1D semiconductor epitaxial growth aspects from nucleation, propagation, to dopant incorporation and activation at the nanometer scale, as well as surface states and Fermi level pinning and unpinning effect on carrier transport properties at nano-scale dimensions. The broader impact of this research is to accelerate the advancement of fundamental nano concepts into engineering solutions by making the bottom-up nanowire growth method compatible with the manufacturable planar processing technology; to attract and retain women engineers and reduce attrition rate at the master degree level through active mentoring and community building; and to cultivate environment for elementary school girls to defy negative stereotype and confidently stay on track for a career in science and engineering.