Collaborative:High Performance III-V Nanowire FETs Enabled by Controlled MOCVD Growth and ALD High-k Passivation

协作：通过受控 MOCVD 生长和 ALD 高 k 钝化实现高性能 III-V 纳米线 FET

• 批准号: 1001928
• 负责人: Xiuling Li
• 金额: $ 25万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-08-15 至 2014-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1001928&HistoricalAwards=false
• 关键词: Collaborative; Performance; III; Nanowire; FETs

The objective of this research is to explore the growth mechanism and transport properties of a novel type of III-V semiconductor nanowires and establish it as a viable nanotechnology building block that is suitable for high performance metal-oxide field effect transistor devices in a scalable and integrable fashion. The approach is to grow nanowire transistor with precise alignment and tailored lateral doping profile through controlled metalorganic chemical vapor deposition on appropriate substrates, passivate by atomic layer deposited high-k dielectrics, and transfer-print to desired substrates for heterogeneous integration. The intellectual merit of this research is to open up a new direction in III-V device possibilities using the self-aligned planar geometry; and fundamentally advance the understanding of 1D semiconductor epitaxial growth aspects from nucleation, propagation, to dopant incorporation and activation at the nanometer scale, as well as surface states and Fermi level pinning and unpinning effect on carrier transport properties at nano-scale dimensions. The broader impact of this research is to accelerate the advancement of fundamental nano concepts into engineering solutions by making the bottom-up nanowire growth method compatible with the manufacturable planar processing technology; to attract and retain women engineers and reduce attrition rate at the master degree level through active mentoring and community building; and to cultivate environment for elementary school girls to defy negative stereotype and confidently stay on track for a career in science and engineering.

本研究的目的是探索一种新型的III-V族半导体纳米线的生长机制和输运性质，并将其作为一种可行的纳米技术构建块，适用于高性能金属氧化物场效应晶体管器件的可扩展和可集成的方式。该方法是通过在适当的衬底上控制金属有机化学气相沉积来生长具有精确对准和定制的横向掺杂分布的纳米线晶体管，通过沉积高k值的原子层来钝化，并且转印到所需的衬底上用于异质集成。这项研究的智力价值是开辟了一个新的方向，在III-V族器件的可能性，使用自对准平面几何形状;从根本上推进一维半导体外延生长方面的理解，从成核，传播，掺杂剂的掺入和激活在纳米尺度，以及表面状态和费米能级钉扎和取消钉扎效应的载流子输运性质在纳米尺度尺寸。这项研究的更广泛的影响是，通过使自下而上的纳米线生长方法与可制造的平面加工技术兼容，加速将基本纳米概念推进到工程解决方案中;通过积极的指导和社区建设，吸引和留住女工程师，降低硕士学位一级的自然减员率;并为小学女生创造环境，使她们能够克服负面的刻板印象，自信地走上科学和工程职业的道路。