GOALI: Scaling-up Electronic Purification of Single Wall Carbon Nanotubes via Nanoscale Thermocapillary Flows for High Performance Transistors

GOALI:通过高性能晶体管的纳米级热毛细管流扩大单壁碳纳米管的电子纯化

基本信息

  • 批准号:
    1436133
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-09-01 至 2017-08-31
  • 项目状态:
    已结题

项目摘要

Historically the microelectronics industry has been driving integrated circuit technology development, shrinking silicon transistor sizes, reducing their power consumption and lowering their cost. For strategic electronic applications like satellite technologies, advanced materials development is essential. Single Wall Carbon Nanotubes have emerged as an important material candidate for these applications. The industry believes that electronic devices fabricated using nanotubes may eventually replace silicon-based devices for logic applications; but it is also well known that nanotube-based radiofrequency transistors are important as high-performance analog components in wireless systems. Key to the advance of high performance is the availability of aligned films of semiconducting nanotubes with high purity (99.999 percent semiconducting nanotubes) at the wafer scale. Scaling-up electronic purification of nanotubes is the key challenge. Recently the Illinois team developed a path to purification for grown aligned nanotubes at levels that meet these daunting requirements. This Grant Opportunity for Academic Liaison with Industry (GOALI) award will support the work needed to scale this purification process to the wafer-scale, and integrate it into the process of record for nanotube field effect transistors in collaboration with Northrup Grumman Corporation. This work will have a great societal benefit, impacting power consumption and performance in wireless technologies, and will serve as one of the first scalable nanomanufacturing development efforts in the area. The work will provide a training platform for future engineers in this new manufacturing paradigm. Moreover this interdisciplinary effort will broaden participation of underrepresented groups in the research through use of the Summer Research Programs at Illinois and Northrup Grumman Corporation. Aligned sub-monolayer films of single walled carbon nanotubes grown by chemical vapor deposition represent a promising materials platform for high-performance electronic applications. However, film electronic purity is a critical issue. Recently the Illinois team developed a path to purification for as-grown aligned materials based on utilization of a thermal resist which serves as an etch barrier for semiconducting nanotubes during processing. The process uses nanoscale thermocapillary flows in thin organic films as a processing strategy for complete, selective removal of metallic nanotubes from aligned arrays of single walled nanotubes. Compatibility with current microelectronics fabrication tools suggests it can serve as a scalable technique for nanotube substrate purification. Microwave excitation leads to efficient, selective removal of metallic tubes via this process, enabling 100 percent purity. The research team will scale-up thermocapillary purification methods for wafer-scale manufacture and will introduce them into the transistor processing workflow at Northrup Grumman. A high volume microwave reactor will be designed, assembled, and developed. Ultimately high-performance, low-power, low noise linear carbon nanotube amplifiers will be fabricated at the wafer-scale.
从历史上看,微电子行业一直推动着集成电路技术的发展,缩小了硅晶体管的尺寸,降低了它们的功耗和成本。对于卫星技术等战略电子应用,先进材料的开发是必不可少的。单壁碳纳米管已经成为这些应用的重要候选材料。业界认为,使用纳米管制造的电子设备最终可能会在逻辑应用中取代硅基设备;但众所周知,基于纳米管的射频晶体管在无线系统中作为高性能模拟元件非常重要。提高高性能的关键是在晶片规模上获得高纯度(99.999%的半导体纳米管)的定向半导体纳米管薄膜。扩大纳米管电子提纯的规模是关键挑战。最近,伊利诺伊州的团队开发了一种方法,可以在满足这些令人望而生畏的要求的水平上对生长的定向纳米管进行纯化。这项学术与工业联系机会(GOALI)奖将支持将这种提纯工艺扩大到晶片规模所需的工作,并与诺斯罗普·格鲁曼公司合作,将其整合到纳米管场效应晶体管的记录过程中。这项工作将产生巨大的社会效益,影响无线技术的功耗和性能,并将成为该领域首批可扩展的纳米制造开发努力之一。这项工作将为未来工程师在这一新的制造模式中提供培训平台。此外,这种跨学科的努力将通过使用伊利诺伊州和诺斯罗普·格鲁曼公司的夏季研究计划,扩大代表不足的群体对研究的参与。化学气相沉积法制备的单壁碳纳米管定向亚单层膜是一种很有前途的高性能电子应用材料平台。然而,胶片的电子纯度是一个关键问题。最近,伊利诺伊州的研究小组开发了一种对生长的定向材料进行提纯的方法,这种方法基于热阻的使用,热阻在加工过程中充当半导体纳米管的腐蚀屏障。该方法使用薄膜中的纳米级热毛细管流动作为一种处理策略,从排列的单壁纳米管阵列中完全、选择性地去除金属纳米管。与目前微电子制造工具的兼容性表明,它可以作为一种可扩展的纳米管衬底提纯技术。通过这一过程,微波激发可以高效、选择性地去除金属管,从而实现100%的纯度。研究小组将扩大用于晶片规模制造的热毛细管净化方法,并将它们引入诺斯罗普·格鲁曼公司的晶体管加工工作流程。将设计、组装和开发一台大容量微波反应堆。最终,高性能、低功耗、低噪声的线性碳纳米管放大器将在晶片规模上制造出来。

项目成果

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Xiuling Li其他文献

Exploring the challenge of early gastric cancer diagnostic AI system face in multiple centers and its potential solutions
探讨早期胃癌诊断AI系统在多中心面临的挑战及其潜在解决方案
  • DOI:
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    6.3
  • 作者:
    Z. Dong;Xiao Tao;Hongliu Du;Junxiao Wang;Li Huang;C. He;Zhi;Xinli Mao;Yaowei Ai;Beiping Zhang;Mei Liu;Hong Xu;Zhenyu Jiang;Yun;Xiuling Li;Zhihong Liu;Jinzhong Chen;Ying Song;Guowei Liu;Chaijie Luo;Yanxia Li;Xiao;Jun Liu;Yijie Zhu;Lianlian Wu;Honggang Yu
  • 通讯作者:
    Honggang Yu
Interfacially Polymerized Particles with Heterostructured Nanopores for Glycopeptide Separation
用于糖肽分离的具有异质结构纳米孔的界面聚合颗粒
  • DOI:
    10.1002/adma.201803299
  • 发表时间:
    2018-08
  • 期刊:
  • 影响因子:
    29.4
  • 作者:
    Yongyang Song;Xiuling Li;Jun‐Bing Fan;Hongjian Kang;Xiaofei Zhang;Cheng Chen;Xinmiao Liang;Shutao Wang
  • 通讯作者:
    Shutao Wang
Enhanced Catalytic Activity of Nickel Wire Encapsulated Boron Nitride Nanotubes Toward O2 Activation and CO Oxidation: A Theoretical Study
镍丝封装氮化硼纳米管增强 O2 活化和 CO 氧化催化活性:理论研究
SERS strategy based on the modified Au nanoparticles for highly sensitive detection of bisphenol A residues in milk
基于修饰金纳米颗粒的 SERS 策略用于高灵敏度检测牛奶中的双酚 A 残留
  • DOI:
    10.1016/j.talanta.2017.10.055
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    6.1
  • 作者:
    Libin Yang;Yongliang Chen;Yu Shen;Ming Yang;Xiuling Li;Xiaoxia Han;Xin Jiang;Bing Zhao
  • 通讯作者:
    Bing Zhao
Enhanced Catalytic Activity of Boron Nitride Nanotubes by Encapsulation of Nickel Wire Toward O2 Activation and CO Oxidation: A Theoretical Study
镍丝封装增强氮化硼纳米管对 O2 活化和 CO 氧化的催化活性:理论研究
  • DOI:
    10.3389/fceng.2021.807510
  • 发表时间:
    2022-01
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Keke Mao;Haifeng Lv;Xiuling Li;Jiajia Cai
  • 通讯作者:
    Jiajia Cai

Xiuling Li的其他文献

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{{ truncateString('Xiuling Li', 18)}}的其他基金

Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
  • 批准号:
    2200651
  • 财政年份:
    2021
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
  • 批准号:
    1809946
  • 财政年份:
    2018
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
I-Corps: Passive Electronics Miniaturization Technology
I-Corps:无源电子小型化技术
  • 批准号:
    1722234
  • 财政年份:
    2017
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
PFI:AIR-TT: Technology Translation: Rolled-up 3D Passive Electronic Component Prototype Development
PFI:AIR-TT:技术翻译:卷式 3D 无源电子元件原型开发
  • 批准号:
    1701047
  • 财政年份:
    2017
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Programmable Metal-Assisted Chemical Etching for Three-Dimensional Functional Metamaterials
合作研究:三维功能超材料的可编程金属辅助化学蚀刻
  • 批准号:
    1462946
  • 财政年份:
    2015
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Lateral Epitaxial Growth of Nanowires for Electronics
电子产品纳米线的横向外延生长
  • 批准号:
    1508140
  • 财政年份:
    2015
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
nano@illinois RET: Research Experience for Teachers Site in Nanotechnology (RET in Engineering and Computer Science Site)
nano@illinois RET:纳米技术教师研究经验网站(工程和计算机科学网站 RET)
  • 批准号:
    1407194
  • 财政年份:
    2014
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
On-Chip 3D Spiral Inductors by Self-rolled-up Membranes: Extreme Miniaturization and Performance Enhancement
自卷膜片上 3D 螺旋电感器:极度小型化和性能增强
  • 批准号:
    1309375
  • 财政年份:
    2013
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
Collaborative:High Performance III-V Nanowire FETs Enabled by Controlled MOCVD Growth and ALD High-k Passivation
协作:通过受控 MOCVD 生长和 ALD 高 k 钝化实现高性能 III-V 纳米线 FET
  • 批准号:
    1001928
  • 财政年份:
    2010
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Exploring the Mechanism of VLS Planar Nanowire Growth through Structural and Impurity Perturbation
通过结构和杂质扰动探索 VLS 平面纳米线生长机制
  • 批准号:
    1006581
  • 财政年份:
    2010
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant

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