PFI:AIR-TT: Technology Translation: Rolled-up 3D Passive Electronic Component Prototype Development
PFI:AIR-TT:技术翻译:卷式 3D 无源电子元件原型开发
基本信息
- 批准号:1701047
- 负责人:
- 金额:$ 20万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2017
- 资助国家:美国
- 起止时间:2017-06-01 至 2020-11-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This PFI:AIR Technology Translation project focuses on translating the strain-induced self-roll-up membrane nanotechnology to fill the need to reduce the size of widely used lumped passive components in integrated circuits. The miniaturization of passive electronic components is important because it will shrink the overall size and weight of wearable devices or allow more functionalities to be implemented without changing the footprint of the electronic components. The project will result in a prototype of an integrated circuit chip with rolled-up passive components, particularly an inductor. This rolled-up inductor has the following unique features: small, light, and high operating frequency. These features provide advantages including better wearability and higher frequency mobile communications when compared to the leading competing planar coil inductors and other passive components in this market space. This project addresses the following technology gaps as it translates the strain-induced self-rolled-up membrane (S-RuM) based passive components from research discovery toward commercial application. The current widely used lumped passive components, especially planar inductors in monolithic integrated circuits (ICs) have several drawbacks that include large on-wafer footprint (occupy as much as 90% of the IC), low operation frequency, and sensitivity to substrate doping levels and deformation. One of the solutions to solve these problems is to use three-dimensional (3D) structures, because hierarchical 3D structures enable efficient use of materials without changing the footprint in plane and lead to advanced functionalities that are otherwise out of reach. However, if conventional fabrication technologies are used to produce 3D structures, issues such as mechanical stability, conformity, alignment, process complexity and cost are difficult to address. The S-RuM based passive technology provides a revolutionary platform because of the self-assembly nature, which produces a 3D cylindrical structure from a 2D layout spontaneously once released from the mechanical support, minimizing mechanical stability concerns by avoiding processing on suspended or curved surfaces. The CMOS-compatibility of the materials and processes also makes integration with active devices and other passive components feasible. In contrast to the planar counterpart, this 3D platform promises to produce IC chips with dramatically enhanced inductance density, superior Q factor/frequency, and minimized substrate coupling. Personnel involved in this project, including one graduate student and two undergraduate students, will receive innovation and technology translation experiences through making a functional prototype that meets the needs of potential customers.
该PFI:空气技术翻译项目的重点是翻译应变引起的自动膜纳米技术,以填补减少集成电路中广泛使用的集团被动组件大小的需求。被动电子组件的微型化非常重要,因为它将缩小可穿戴设备的整体尺寸和重量,或者允许在不改变电子组件的足迹的情况下实现更多功能。该项目将导致具有卷起的被动组件的集成电路芯片的原型,尤其是诱导的组件。该卷起的电感器具有以下独特的功能:小,光线和高工作频率。与领先的竞争平面线圈电感器和该市场空间中的其他被动组件相比,这些功能提供了更好的可穿戴能力和更高的移动通信。该项目解决了以下技术差距,因为它转化了基于应变的自倾膜(S-RUM)的被动组件,从研究发现到商业应用。目前使用的总体用被动组件,尤其是整体集成电路(ICS)中计划的电感器(ICS)具有几个缺点,其中包括大型磁力占地面积(占IC的90%的90%),低操作频率和对底物掺杂水平和变形的敏感性。解决这些问题的解决方案之一是使用三维(3D)结构,因为层次结构3D结构可以有效地使用材料,而无需更改平面上的足迹并导致高级功能,否则这些功能是无法触及的。但是,如果使用常规制造技术来生产3D结构,则难以解决机械稳定,合格,一致性,过程复杂性和成本等问题。基于S-RUM的被动技术提供了一个革命性的平台,因为自我组装性质是从机械支持中释放出的2D布局的3D圆柱结构,从而避免在悬浮或弯曲的表面上处理处理机械稳定性问题。材料和过程的CMOS兼容还使与活动设备和其他被动组件可行。与平面对应物相反,这个3D平台有望产生具有动态增强电感密度,Q因子/频率和最小化底物耦合的IC芯片。参与该项目的人员,包括一名研究生和两名本科生,将通过制定满足潜在客户需求的功能原型来获得创新和技术翻译体验。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology
- DOI:10.1126/sciadv.aay4508
- 发表时间:2020-01-01
- 期刊:
- 影响因子:13.6
- 作者:Huang, Wen;Yang, Zhendong;Li, Xiuling
- 通讯作者:Li, Xiuling
Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures
- DOI:10.1002/admi.201901022
- 发表时间:2019-09
- 期刊:
- 影响因子:5.4
- 作者:J. Michaels;Derek Wood;Paul J. Froeter;Wen Huang;D. Sievers;Xiuling Li
- 通讯作者:J. Michaels;Derek Wood;Paul J. Froeter;Wen Huang;D. Sievers;Xiuling Li
Three-dimensional radio-frequency transformers based on a self-rolled-up membrane platform
- DOI:10.1038/s41928-018-0073-5
- 发表时间:2018-05-01
- 期刊:
- 影响因子:34.3
- 作者:Huang, Wen;Zhou, Jingchao;Li, Xiuling
- 通讯作者:Li, Xiuling
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Xiuling Li其他文献
First-Trimester Evaluation of Cleft Lip and Palate by A Novel Two-Dimensional Sonographic Technique: A Prospective Study
通过新型二维超声技术评估唇裂和腭裂的妊娠早期:一项前瞻性研究
- DOI:
10.2174/1573405618666220713103500 - 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Xiuling Li;Guanghui Xiu;Fang Yan;Qingsha Hou;Chun Chen;Xudong Dong;Huanling Liu - 通讯作者:
Huanling Liu
Mesoporous semiconducting TiO2 with rich active sites as a remarkable substrate for surface-enhanced Raman scattering
具有丰富活性位点的介孔半导体 TiO2 作为表面增强拉曼散射的出色基材
- DOI:
10.1039/c7cp03399k - 发表时间:
2017 - 期刊:
- 影响因子:0
- 作者:
Libin Yang;Di Yin;Yu Shen;Ming Yang;Xiuling Li;Xiaoxia Han;Xin Jiang;Bing Zhao - 通讯作者:
Bing Zhao
Fluorine-Induced Dual Defects in Cobalt Phosphide Nanosheets Enhance Hydrogen Evolution Reaction Activity
磷化钴纳米片中氟诱导的双重缺陷增强析氢反应活性
- DOI:
10.1021/acsmaterialslett.0c00209 - 发表时间:
2020-05 - 期刊:
- 影响因子:11.4
- 作者:
Kun Xu;Yiqiang Sun;Xiuling Li;Zihan Zhao;Yongqi Zhang;Cuncheng Li;Hong Jin Fan - 通讯作者:
Hong Jin Fan
Bidirectional and Unidirectional Negative Differential Thermal Resistance Effect in a Modified Lorentz Gas Mode
改进洛伦兹气体模式下的双向和单向负微分热阻效应
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:3.5
- 作者:
Yu Yang;Xiuling Li;Lifa Zhang - 通讯作者:
Lifa Zhang
采用Click OEG-CD 分段、富集磷酸化肽
- DOI:
- 发表时间:
2012 - 期刊:
- 影响因子:3.1
- 作者:
Xiuling Li - 通讯作者:
Xiuling Li
Xiuling Li的其他文献
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{{ truncateString('Xiuling Li', 18)}}的其他基金
Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
- 批准号:
2200651 - 财政年份:2021
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
- 批准号:
1809946 - 财政年份:2018
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
I-Corps: Passive Electronics Miniaturization Technology
I-Corps:无源电子小型化技术
- 批准号:
1722234 - 财政年份:2017
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Collaborative Research: Programmable Metal-Assisted Chemical Etching for Three-Dimensional Functional Metamaterials
合作研究:三维功能超材料的可编程金属辅助化学蚀刻
- 批准号:
1462946 - 财政年份:2015
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Lateral Epitaxial Growth of Nanowires for Electronics
电子产品纳米线的横向外延生长
- 批准号:
1508140 - 财政年份:2015
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
GOALI: Scaling-up Electronic Purification of Single Wall Carbon Nanotubes via Nanoscale Thermocapillary Flows for High Performance Transistors
GOALI:通过高性能晶体管的纳米级热毛细管流扩大单壁碳纳米管的电子纯化
- 批准号:
1436133 - 财政年份:2014
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
nano@illinois RET: Research Experience for Teachers Site in Nanotechnology (RET in Engineering and Computer Science Site)
nano@illinois RET:纳米技术教师研究经验网站(工程和计算机科学网站 RET)
- 批准号:
1407194 - 财政年份:2014
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
On-Chip 3D Spiral Inductors by Self-rolled-up Membranes: Extreme Miniaturization and Performance Enhancement
自卷膜片上 3D 螺旋电感器:极度小型化和性能增强
- 批准号:
1309375 - 财政年份:2013
- 资助金额:
$ 20万 - 项目类别:
Continuing Grant
Collaborative:High Performance III-V Nanowire FETs Enabled by Controlled MOCVD Growth and ALD High-k Passivation
协作:通过受控 MOCVD 生长和 ALD 高 k 钝化实现高性能 III-V 纳米线 FET
- 批准号:
1001928 - 财政年份:2010
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Exploring the Mechanism of VLS Planar Nanowire Growth through Structural and Impurity Perturbation
通过结构和杂质扰动探索 VLS 平面纳米线生长机制
- 批准号:
1006581 - 财政年份:2010
- 资助金额:
$ 20万 - 项目类别:
Continuing Grant
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