Lateral Epitaxial Growth of Nanowires for Electronics

该项目由材料研究部(DMR)的电子与光子材料(EPM)和电气、通信和网络系统(ECCS)的电子、光子学和磁性设备(EPMD)计划共同资助。非技术描述：从移动电话到太阳能电池，再到固态照明，半导体设备使我们的现代生活成为可能。本研究项目致力于建立一种新的III-V半导体纳米技术平台的基础和技术基础，该平台包括在表面平面排列的纳米线，而不是通常的纳米线垂直于表面排列的几何结构。该平台不仅适用于未来几代集成电路的大规模扩展，而且与微电子行业现有的平面加工技术兼容。该项目为跨学科研究和教育活动提供了一个天然的平台，允许开发纳米技术、纳米制造、纳米电子学和纳米级无损表征方面的课程。涉及地方和全国高中教师的外展活动与首席调查员(PI)领导的教师研究经验方案一起开展。组织网络研讨会、研讨会、短期课程和暑期学校，向公众传播研究成果。国际和平协会和共同国际和平协会都致力于促进未被充分代表的群体参与科学和工程。技术描述：该项目探索了用于可制造纳米电子的自对准平面化合物半导体纳米线阵列的生长和表征。利用横向外延生长的纳米线阵列能够实现真正的一维电子传输特性以及定义明确的p-n结和异质结。具体地说，基本的生长和掺杂研究是通过控制生长、尺寸缩放、掺杂缩放和结突发度控制以及器件级别的电学特性来进行的。该项目的任务/目标是：(1)获得具有真正一维态密度的III-V纳米线阵列；(2)单片实现隧道场效应晶体管的横向p-n结；以及(3)利用微波阻抗显微镜和纳米红外成像和光谱分析，在纳米尺度上了解电学性质及其与形态的关系。这些发现有望揭示合金化半导体纳米线横向生长和传输特性中的杂质掺入、析出和偏析，并最终有助于加速基本纳米概念作为工程解决方案的发展。

The project is jointly funded by the Electronic and Photonic Materials (EPM) in the Division of Materials Research (DMR), and by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS).Nontechnical Description: From mobile phones, to solar cells, to solid-state lighting, semiconductor devices have enabled our modern life. This research project focuses on establishing the fundamental and technical foundation of a new III-V semiconductor nanotechnology platform encompassing nanowires aligned in the surface plane, instead of the common geometry with nanowires aligned perpendicular to the surface. The platform is not only suitable for aggressive scaling of future generations of integrated circuits, but also compatible with the existing planar processing technology for the microelectronics industry. This project provides a natural platform for interdisciplinary research and education activities, allowing curriculum development in nanotechnology, nanomanufacturing, nanoelectronics, and nanoscale non-destructive characterization. Outreach activities involving local and nationwide high-school teachers are carried out in conjunction with a Research Experience for Teachers program led by the principle investigator (PI). Webinars, seminars, short courses, and summer schools are organized to disseminate research results to the general public. Both the PI and co-PI are committed to promoting the participation of underrepresented groups in science and engineering. Technical Description: This project explores the growth and characterization of a self-aligned planar compound semiconductor nanowire array for manufacturable nanoelectronics. The nanowire array grown using lateral epitaxy enables true one-dimensional electronic transport properties and well-defined p-n junctions and heterojunctions. Specifically, fundamental growth and doping studies are carried out through controlled growth, size scaling, doping scaling and control of junction abruptness as well as electrical characterization at the device level. The project tasks/goals are: (1) to achieve III-V nanowire-based arrays with true one-dimensional density of states; (2) to realize lateral p-n junction monolithically for tunnel field-effect transistors; and (3) to understand electrical properties and their correlation with morphology at the nanoscale, using microwave impedance microscopy and nanoscale infrared imaging and spectroscopy. The findings are expected to shed light on impurity incorporation, precipitation, and segregation in the lateral growth and transport properties of alloyed semiconductor nanowires, and ultimately help to accelerate the advancement of fundamental nano concepts as engineering solutions.