Lateral Epitaxial Growth of Nanowires for Electronics

该项目由材料研究部 (DMR) 电子和光子材料 (EPM) 以及电气、通信和网络系统 (ECCS) 部电子、光子和磁性器件 (EPMD) 项目联合资助。非技术说明：从移动电话到太阳能电池，再到固态照明，半导体器件使我们的现代生活成为可能。该研究项目的重点是建立新的 III-V 族半导体纳米技术平台的基础和技术基础，该平台包含在表面平面上排列的纳米线，而不是垂直于表面排列的纳米线的常见几何形状。该平台不仅适合未来几代集成电路的大规模微缩，而且与微电子行业现有的平面加工技术兼容。该项目为跨学科研究和教育活动提供了一个天然的平台，允许纳米技术、纳米制造、纳米电子学和纳米级无损表征方面的课程开发。涉及当地和全国高中教师的外展活动是与首席研究员 (PI) 领导的教师研究经验项目结合开展的。组织网络研讨会、研讨会、短期课程和暑期学校，向公众传播研究成果。 PI 和 co-PI 均致力于促进代表性不足的群体参与科学和工程领域。技术描述：该项目探索用于可制造纳米电子学的自对准平面化合物半导体纳米线阵列的生长和表征。使用横向外延生长的纳米线阵列可实现真正的一维电子传输特性以及明确的 p-n 结和异质结。具体来说，基本的生长和掺杂研究是通过控制生长、尺寸缩放、掺杂缩放和结突变控制以及器件级的电特性来进行的。项目任务/目标是：（1）实现具有真正一维态密度的III-V纳米线阵列； (2)单片实现横向p-n结隧道场效应晶体管； (3) 使用微波阻抗显微镜和纳米级红外成像和光谱学来了解纳米级的电特性及其与形态的相关性。这些发现有望揭示合金半导体纳米线横向生长和输运特性中的杂质掺入、沉淀和偏析，并最终有助于加速基本纳米概念作为工程解决方案的进步。

The project is jointly funded by the Electronic and Photonic Materials (EPM) in the Division of Materials Research (DMR), and by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS).Nontechnical Description: From mobile phones, to solar cells, to solid-state lighting, semiconductor devices have enabled our modern life. This research project focuses on establishing the fundamental and technical foundation of a new III-V semiconductor nanotechnology platform encompassing nanowires aligned in the surface plane, instead of the common geometry with nanowires aligned perpendicular to the surface. The platform is not only suitable for aggressive scaling of future generations of integrated circuits, but also compatible with the existing planar processing technology for the microelectronics industry. This project provides a natural platform for interdisciplinary research and education activities, allowing curriculum development in nanotechnology, nanomanufacturing, nanoelectronics, and nanoscale non-destructive characterization. Outreach activities involving local and nationwide high-school teachers are carried out in conjunction with a Research Experience for Teachers program led by the principle investigator (PI). Webinars, seminars, short courses, and summer schools are organized to disseminate research results to the general public. Both the PI and co-PI are committed to promoting the participation of underrepresented groups in science and engineering. Technical Description: This project explores the growth and characterization of a self-aligned planar compound semiconductor nanowire array for manufacturable nanoelectronics. The nanowire array grown using lateral epitaxy enables true one-dimensional electronic transport properties and well-defined p-n junctions and heterojunctions. Specifically, fundamental growth and doping studies are carried out through controlled growth, size scaling, doping scaling and control of junction abruptness as well as electrical characterization at the device level. The project tasks/goals are: (1) to achieve III-V nanowire-based arrays with true one-dimensional density of states; (2) to realize lateral p-n junction monolithically for tunnel field-effect transistors; and (3) to understand electrical properties and their correlation with morphology at the nanoscale, using microwave impedance microscopy and nanoscale infrared imaging and spectroscopy. The findings are expected to shed light on impurity incorporation, precipitation, and segregation in the lateral growth and transport properties of alloyed semiconductor nanowires, and ultimately help to accelerate the advancement of fundamental nano concepts as engineering solutions.