Lateral Epitaxial Growth of Nanowires for Electronics

电子产品纳米线的横向外延生长

基本信息

  • 批准号:
    1508140
  • 负责人:
  • 金额:
    $ 42万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2015
  • 资助国家:
    美国
  • 起止时间:
    2015-07-01 至 2020-06-30
  • 项目状态:
    已结题

项目摘要

The project is jointly funded by the Electronic and Photonic Materials (EPM) in the Division of Materials Research (DMR), and by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS).Nontechnical Description: From mobile phones, to solar cells, to solid-state lighting, semiconductor devices have enabled our modern life. This research project focuses on establishing the fundamental and technical foundation of a new III-V semiconductor nanotechnology platform encompassing nanowires aligned in the surface plane, instead of the common geometry with nanowires aligned perpendicular to the surface. The platform is not only suitable for aggressive scaling of future generations of integrated circuits, but also compatible with the existing planar processing technology for the microelectronics industry. This project provides a natural platform for interdisciplinary research and education activities, allowing curriculum development in nanotechnology, nanomanufacturing, nanoelectronics, and nanoscale non-destructive characterization. Outreach activities involving local and nationwide high-school teachers are carried out in conjunction with a Research Experience for Teachers program led by the principle investigator (PI). Webinars, seminars, short courses, and summer schools are organized to disseminate research results to the general public. Both the PI and co-PI are committed to promoting the participation of underrepresented groups in science and engineering. Technical Description: This project explores the growth and characterization of a self-aligned planar compound semiconductor nanowire array for manufacturable nanoelectronics. The nanowire array grown using lateral epitaxy enables true one-dimensional electronic transport properties and well-defined p-n junctions and heterojunctions. Specifically, fundamental growth and doping studies are carried out through controlled growth, size scaling, doping scaling and control of junction abruptness as well as electrical characterization at the device level. The project tasks/goals are: (1) to achieve III-V nanowire-based arrays with true one-dimensional density of states; (2) to realize lateral p-n junction monolithically for tunnel field-effect transistors; and (3) to understand electrical properties and their correlation with morphology at the nanoscale, using microwave impedance microscopy and nanoscale infrared imaging and spectroscopy. The findings are expected to shed light on impurity incorporation, precipitation, and segregation in the lateral growth and transport properties of alloyed semiconductor nanowires, and ultimately help to accelerate the advancement of fundamental nano concepts as engineering solutions.
该项目由材料研究部(DMR)的电子与光子材料(EPM)和电气、通信和网络系统(ECCS)的电子、光子学和磁性设备(EPMD)计划共同资助。非技术描述:从移动电话到太阳能电池,再到固态照明,半导体设备使我们的现代生活成为可能。本研究项目致力于建立一种新的III-V半导体纳米技术平台的基础和技术基础,该平台包括在表面平面排列的纳米线,而不是通常的纳米线垂直于表面排列的几何结构。该平台不仅适用于未来几代集成电路的大规模扩展,而且与微电子行业现有的平面加工技术兼容。该项目为跨学科研究和教育活动提供了一个天然的平台,允许开发纳米技术、纳米制造、纳米电子学和纳米级无损表征方面的课程。涉及地方和全国高中教师的外展活动与首席调查员(PI)领导的教师研究经验方案一起开展。组织网络研讨会、研讨会、短期课程和暑期学校,向公众传播研究成果。国际和平协会和共同国际和平协会都致力于促进未被充分代表的群体参与科学和工程。技术描述:该项目探索了用于可制造纳米电子的自对准平面化合物半导体纳米线阵列的生长和表征。利用横向外延生长的纳米线阵列能够实现真正的一维电子传输特性以及定义明确的p-n结和异质结。具体地说,基本的生长和掺杂研究是通过控制生长、尺寸缩放、掺杂缩放和结突发度控制以及器件级别的电学特性来进行的。该项目的任务/目标是:(1)获得具有真正一维态密度的III-V纳米线阵列;(2)单片实现隧道场效应晶体管的横向p-n结;以及(3)利用微波阻抗显微镜和纳米红外成像和光谱分析,在纳米尺度上了解电学性质及其与形态的关系。这些发现有望揭示合金化半导体纳米线横向生长和传输特性中的杂质掺入、析出和偏析,并最终有助于加速基本纳米概念作为工程解决方案的发展。

项目成果

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Xiuling Li其他文献

Exploring the challenge of early gastric cancer diagnostic AI system face in multiple centers and its potential solutions
探讨早期胃癌诊断AI系统在多中心面临的挑战及其潜在解决方案
  • DOI:
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    6.3
  • 作者:
    Z. Dong;Xiao Tao;Hongliu Du;Junxiao Wang;Li Huang;C. He;Zhi;Xinli Mao;Yaowei Ai;Beiping Zhang;Mei Liu;Hong Xu;Zhenyu Jiang;Yun;Xiuling Li;Zhihong Liu;Jinzhong Chen;Ying Song;Guowei Liu;Chaijie Luo;Yanxia Li;Xiao;Jun Liu;Yijie Zhu;Lianlian Wu;Honggang Yu
  • 通讯作者:
    Honggang Yu
Interfacially Polymerized Particles with Heterostructured Nanopores for Glycopeptide Separation
用于糖肽分离的具有异质结构纳米孔的界面聚合颗粒
  • DOI:
    10.1002/adma.201803299
  • 发表时间:
    2018-08
  • 期刊:
  • 影响因子:
    29.4
  • 作者:
    Yongyang Song;Xiuling Li;Jun‐Bing Fan;Hongjian Kang;Xiaofei Zhang;Cheng Chen;Xinmiao Liang;Shutao Wang
  • 通讯作者:
    Shutao Wang
Enhanced Catalytic Activity of Nickel Wire Encapsulated Boron Nitride Nanotubes Toward O2 Activation and CO Oxidation: A Theoretical Study
镍丝封装氮化硼纳米管增强 O2 活化和 CO 氧化催化活性:理论研究
SERS strategy based on the modified Au nanoparticles for highly sensitive detection of bisphenol A residues in milk
基于修饰金纳米颗粒的 SERS 策略用于高灵敏度检测牛奶中的双酚 A 残留
  • DOI:
    10.1016/j.talanta.2017.10.055
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    6.1
  • 作者:
    Libin Yang;Yongliang Chen;Yu Shen;Ming Yang;Xiuling Li;Xiaoxia Han;Xin Jiang;Bing Zhao
  • 通讯作者:
    Bing Zhao
Enhanced Catalytic Activity of Boron Nitride Nanotubes by Encapsulation of Nickel Wire Toward O2 Activation and CO Oxidation: A Theoretical Study
镍丝封装增强氮化硼纳米管对 O2 活化和 CO 氧化的催化活性:理论研究
  • DOI:
    10.3389/fceng.2021.807510
  • 发表时间:
    2022-01
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Keke Mao;Haifeng Lv;Xiuling Li;Jiajia Cai
  • 通讯作者:
    Jiajia Cai

Xiuling Li的其他文献

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{{ truncateString('Xiuling Li', 18)}}的其他基金

Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
  • 批准号:
    2200651
  • 财政年份:
    2021
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs
合作研究:Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长
  • 批准号:
    1809946
  • 财政年份:
    2018
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
I-Corps: Passive Electronics Miniaturization Technology
I-Corps:无源电子小型化技术
  • 批准号:
    1722234
  • 财政年份:
    2017
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
PFI:AIR-TT: Technology Translation: Rolled-up 3D Passive Electronic Component Prototype Development
PFI:AIR-TT:技术翻译:卷式 3D 无源电子元件原型开发
  • 批准号:
    1701047
  • 财政年份:
    2017
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Collaborative Research: Programmable Metal-Assisted Chemical Etching for Three-Dimensional Functional Metamaterials
合作研究:三维功能超材料的可编程金属辅助化学蚀刻
  • 批准号:
    1462946
  • 财政年份:
    2015
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
GOALI: Scaling-up Electronic Purification of Single Wall Carbon Nanotubes via Nanoscale Thermocapillary Flows for High Performance Transistors
GOALI:通过高性能晶体管的纳米级热毛细管流扩大单壁碳纳米管的电子纯化
  • 批准号:
    1436133
  • 财政年份:
    2014
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
nano@illinois RET: Research Experience for Teachers Site in Nanotechnology (RET in Engineering and Computer Science Site)
nano@illinois RET:纳米技术教师研究经验网站(工程和计算机科学网站 RET)
  • 批准号:
    1407194
  • 财政年份:
    2014
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
On-Chip 3D Spiral Inductors by Self-rolled-up Membranes: Extreme Miniaturization and Performance Enhancement
自卷膜片上 3D 螺旋电感器:极度小型化和性能增强
  • 批准号:
    1309375
  • 财政年份:
    2013
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Collaborative:High Performance III-V Nanowire FETs Enabled by Controlled MOCVD Growth and ALD High-k Passivation
协作:通过受控 MOCVD 生长和 ALD 高 k 钝化实现高性能 III-V 纳米线 FET
  • 批准号:
    1001928
  • 财政年份:
    2010
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Exploring the Mechanism of VLS Planar Nanowire Growth through Structural and Impurity Perturbation
通过结构和杂质扰动探索 VLS 平面纳米线生长机制
  • 批准号:
    1006581
  • 财政年份:
    2010
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant

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In-situ X-ray Scattering Studies of Oxide Epitaxial Growth Kinetics and Dynamics
氧化物外延生长动力学和动力学的原位 X 射线散射研究
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