Investigation of high In-composition InGaN

高成分InGaN的研究

• 批准号: 1106177
• 负责人: Siddharth Rajan
• 金额: $ 43.24万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1106177&HistoricalAwards=false
• 关键词: Investigation; composition; InGaN

Abstract:Technical: High In-composition alloys (InGaN, xIn 0.25) are among the most unexplored materials in the III-nitride system. While the bandgap range of InGaN alloys can cover the entire spectrum from ultra-violet (Eg, GaN ~ 3.4 eV) to infrared (Eg, InN ~ 0.7 eV), technological applications until now are restricted to the higher energy range of this spectrum. The relatively low number of applications in the lower bandgap III-nitride alloys is due to the challenges associated with epitaxial growth, and poor understanding of the electrical, defect, and optical characteristics of these materials. This project will address the critical issues relating growth and structural properties to electrical, optical, and defect properties to achieve higher composition InGaN films on N-polar orientation of GaN. This project will investigate the growth kinetics for this material in metal-rich and nitrogen-rich regimes to create a comprehensive growth model for Ga- and N-polar InGaN. This study will include thick InGaN films and strained InGaN films on GaN to understand the physical origins of phase segragation, dislocation-mediated relaxation, and surface morphologies. Electrical and optical characterizations of the films will lead to an understanding of p-type and n-type doping, as well as the background defect incorporation in the films (through deep level optical spectroscopy). Non-Technical: The study will enable device applications that exploit the large bandgap range of III-nitrides. Extending the tremendous commercial success of III-nitride emitters to a larger range of optical and electronic applications will be transformative to the semiconductor technology industry. The PIs have a strong record of extending their research activities to involve high school students. The interdisciplinary nature of this project requires close collaboration between the different groups involved, and will be excellent training for undergraduate and graduate students involved.

翻译后摘要：技术：高In成分合金（InGaN，xIn 0. 25）是最未开发的材料中的III族氮化物系统。虽然InGaN合金的带隙范围可以覆盖从紫外（例如，GaN ~ 3.4 eV）到红外（例如，InN ~ 0.7 eV）的整个光谱，但到目前为止，技术应用仅限于该光谱的较高能量范围。较低带隙III族氮化物合金的应用数量相对较少是由于与外延生长相关的挑战以及对这些材料的电学、缺陷和光学特性的理解不足。该项目将解决与生长和结构特性以及电学、光学和缺陷特性相关的关键问题，以在GaN的N极取向上获得更高成分的InGaN薄膜。该项目将研究这种材料在富金属和富氮状态下的生长动力学，为Ga和N极性InGaN创建一个全面的生长模型。这项研究将包括GaN上的厚InGaN膜和应变InGaN膜，以了解相分离，位错介导的弛豫和表面形貌的物理起源。薄膜的电学和光学特性将导致对p型和n型掺杂的理解，以及薄膜中的背景缺陷掺入（通过深能级光谱）。 非技术性：该研究将使利用III族氮化物的大带隙范围的器件应用成为可能。将III族氮化物发射器的巨大商业成功扩展到更大范围的光学和电子应用将对半导体技术行业产生变革。PI在将其研究活动扩展到高中生方面有着良好的记录。该项目的跨学科性质需要所涉及的不同群体之间的密切合作，并且将为所涉及的本科生和研究生提供出色的培训。