76th Device Research Conference (DRC) to be held at the University of California, Santa Barbara, June 24 to 27, 2018

第 76 届设备研究会议 (DRC) 将于 2018 年 6 月 24 日至 27 日在加州大学圣塔芭芭拉分校举行

基本信息

  • 批准号:
    1836790
  • 负责人:
  • 金额:
    $ 1万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2018
  • 资助国家:
    美国
  • 起止时间:
    2018-08-01 至 2019-01-31
  • 项目状态:
    已结题

项目摘要

The proposed project seeks financial support for increasing the diversity of speakers and enhancing student participation at a Conference to be held from June 24 to 27, 2018 at the University of California, Santa Barbara. The "76th Device Research Conference (DRC)" will focus on a variety of devices ranging from semiconductors to organic, molecular devices, as well as spin and quantum devices. The Conference will host world-renowned researchers in advanced devices as invited speakers, whose expertise range from design, to fabrication characterization and applications. In addition to technical talks, short courses on highly relevant topics presented by renowned world experts will greatly enhance the usefulness of the conference to attendees. This year's course will be on future computing technologies based on architectures beyond traditional von Neumann computing. The technical program will provide student participants with the opportunity to gain exposure to new materials and devices, their basic physics, and their engineering applications. Exposing the next generation of researchers to these important disciplines is critical to maintain the supply of STEM workers with the skillsets necessary to address emerging commercial trends. The information will be disseminated through the conference proceedings which will be available online through the IEEEXplore.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
拟议的项目寻求财政支持,以增加演讲者的多样性,并提高学生参与会议将于2018年6月24日至27日在加州大学,圣巴巴拉举行。“第76届器件研究会议(DRC)”将集中讨论从半导体到有机、分子器件以及自旋和量子器件的各种器件。会议将邀请先进器件领域的世界知名研究人员作为特邀演讲者,他们的专业知识范围从设计到制造表征和应用。除了技术讲座外,由世界知名专家就高度相关的主题举办的短期课程将大大提高会议对与会者的实用性。今年的课程将是基于超越传统冯诺依曼计算架构的未来计算技术。该技术计划将为学生参与者提供接触新材料和设备,其基础物理及其工程应用的机会。让下一代研究人员接触这些重要学科,对于维持STEM工作者的供应至关重要,这些工作者具备应对新兴商业趋势所需的技能。该奖项反映了NSF的法定使命,并被认为值得通过使用基金会的知识价值和更广泛的影响审查标准进行评估来支持。

项目成果

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Siddharth Rajan其他文献

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
具有再生 p-AlGaN 栅极层和欧姆接触的富铝 AlGaN 晶体管
  • DOI:
    10.1002/admi.202301080
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    5.4
  • 作者:
    B.A. Klein;Andrew A. Allerman;A.M. Armstrong;M. Rosprim;Colin Tyznik;Yinxuan Zhu;C. Joishi;Chris Chae;Siddharth Rajan
  • 通讯作者:
    Siddharth Rajan
Design and Simulation of a III-Nitride Light Emitting Transistor
III 族氮化物发光晶体管的设计与仿真
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Mohammad Awwad;Sheikh Ifatur Rahman;C. Joishi;B. L. Anderson;Siddharth Rajan
  • 通讯作者:
    Siddharth Rajan
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy
X 射线光电子能谱测定接枝单晶 Si (0 0 1)/β-Ga2O3 (0 1 0) p-n 异质结的能带排列
  • DOI:
    10.1016/j.apsusc.2024.159615
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    6.7
  • 作者:
    Jiarui Gong;Jie Zhou;Ashok Dheenan;Moheb Sheikhi;F. Alema;T. Ng;S. Pasayat;Qiaoqiang Gan;A. Osinsky;Vincent Gambin;Chirag Gupta;Siddharth Rajan;Boon S. Ooi;Zhenqiang Ma
  • 通讯作者:
    Zhenqiang Ma
All MOCVD grown Al<sub>0.7</sub>Ga<sub>0.3</sub>N/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
  • DOI:
    10.1016/j.sse.2019.107696
  • 发表时间:
    2020-02-01
  • 期刊:
  • 影响因子:
  • 作者:
    Hao Xue;Seongmo Hwang;Towhidur Razzak;Choonghee Lee;Gabriel Calderon Ortiz;Zhanbo Xia;Shahadat Hasan Sohel;Jinwoo Hwang;Siddharth Rajan;Asif Khan;Wu Lu
  • 通讯作者:
    Wu Lu

Siddharth Rajan的其他文献

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{{ truncateString('Siddharth Rajan', 18)}}的其他基金

FuSe-TG: Co-design based Wide bandgap Semiconductor Research Center
FuSe-TG:基于协同设计的宽带隙半导体研究中心
  • 批准号:
    2235373
  • 财政年份:
    2023
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance
合作研究:FuSe:III族氮化物和砷化硼的异质集成以增强热和电子性能
  • 批准号:
    2329108
  • 财政年份:
    2023
  • 资助金额:
    $ 1万
  • 项目类别:
    Continuing Grant
MRI: Acquisition of Electron Beam Lithography System for Next-Generation Nanomanufacturing and Education
MRI:采购用于下一代纳米制造和教育的电子束光刻系统
  • 批准号:
    2018876
  • 财政年份:
    2020
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Beta-Gallium Oxide Transistors for High Frequency Applications
适用于高频应用的 β-氧化镓晶体管
  • 批准号:
    1809682
  • 财政年份:
    2018
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
  • 批准号:
    1740119
  • 财政年份:
    2017
  • 资助金额:
    $ 1万
  • 项目类别:
    Continuing Grant
Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA
超宽带隙 (UWBG) 半导体研讨会:研究机会和方向 - 2016 年 4 月 25 日至 26 日,弗吉尼亚州阿灵顿
  • 批准号:
    1641056
  • 财政年份:
    2016
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
PFI:AIR - TT: High Efficiency Ultraviolet Light Emitting Diodes Based on Tunneling
PFI:AIR - TT:基于隧道的高效紫外发光二极管
  • 批准号:
    1640700
  • 财政年份:
    2016
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Major Research Instrumentation: Development of Epitaxial Growth System for Few Layer Semiconductors
主要研究仪器:少层半导体外延生长系统的开发
  • 批准号:
    1429143
  • 财政年份:
    2014
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Collaborative Research EAGER: Reliable High Current Density Vacuum Electronics
合作研究 EAGER:可靠的高电流密度真空电子器件
  • 批准号:
    1450508
  • 财政年份:
    2014
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
High Conductivity Tunnel Junctions for Next-Generation UV Emitters
用于下一代紫外线发射器的高电导率隧道结
  • 批准号:
    1408416
  • 财政年份:
    2014
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant

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