Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA

拟议的项目寻求资金支持，以举办一次关于带隙大于3.4 eV，即大于GaN带隙的一大类半导体的现状和挑战的讲习班。具有代表性的材料有AlGaN(包括二元终点AlN)、钻石、Ga2O以及它们的异质结构。研讨会将于2016年4月25日至26日在弗吉尼亚州阿灵顿的基础研究创新与合作中心(BRICC)举行。研讨会将通过聚集不同的专家小组，促进极端(超)宽禁带半导体(UWBG)领先研究的进展。研讨会的主题包括体相和外延生长、低场和高场电子传输、器件体系结构、异质结构设计、器件性能的基本限制、器件制造和加工技术，研讨会将包括7个受邀演讲、10个投稿演讲，预计将有来自工业界、学术界和政府的70名与会者参加。组委会将选择主题引导者，以协助选择与会者。讲习班编写的报告将总结讨论的结果，并将提供给所有讲习班与会者以及科学界的其他成员。

The proposed project seeks financial support for organizing a Workshop on the status and challenges of a broad class of semiconductors with bandgaps larger than 3.4 eV, i.e., larger than the bandgap of GaN. Representative materials are AlGaN (including the binary endpoint AlN), diamond, Ga2O3, and their heterostructures. The Workshop will be held April 25-26, 2016 at the Basic Research Innovation and Collaboration Center (BRICC) in Arlington VA. The Workshop will foster advances in the leading research of extreme (ultra) wide-bandgap (UWBG) semiconductors by gathering a diverse group of experts. Topics to be addressed include among other bulk and epitaxial growth, electronic transport at low and high fields, device architectures, heterostructure designs, fundamental limits to device performance, device fabrication and processing techniques, The workshop will include 7 invited talks, 10 contributed presentations and is expected to be attended by 70 attendees from industry, academia, and government. The organizing committee will select topic leads to assist with selection of attendees. The report prepared on the Workshop will summarize the outcome of the discussions and will be available to all the workshop attendees, as well as other members of the scientific community.