Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA

拟议的项目寻求财政支持，以组织一个关于带隙大于3.4 eV的一大类半导体的现状和挑战的讲习班，即，大于GaN的带隙。代表性材料是AlGaN（包括二元端点AlN）、金刚石、Ga2O3及其异质结构。研讨会将于2016年4月25日至26日在基础研究创新与合作中心（BRICC）在弗吉尼亚州阿灵顿。该研讨会将通过聚集不同的专家组，促进极端（超）宽带隙（UWBG）半导体领先研究的进展。要解决的主题包括在其他块体和外延生长，电子传输在低和高场，器件架构，异质结构设计，器件性能的基本限制，器件制造和加工技术，该研讨会将包括7个特邀演讲，10个贡献的演讲，预计将由70名与会者来自工业界，学术界和政府。组委会将选择主题线索，以协助选择与会者。为讲习班编写的报告将总结讨论结果，并将提供给讲习班的所有与会者以及科学界的其他成员。

The proposed project seeks financial support for organizing a Workshop on the status and challenges of a broad class of semiconductors with bandgaps larger than 3.4 eV, i.e., larger than the bandgap of GaN. Representative materials are AlGaN (including the binary endpoint AlN), diamond, Ga2O3, and their heterostructures. The Workshop will be held April 25-26, 2016 at the Basic Research Innovation and Collaboration Center (BRICC) in Arlington VA. The Workshop will foster advances in the leading research of extreme (ultra) wide-bandgap (UWBG) semiconductors by gathering a diverse group of experts. Topics to be addressed include among other bulk and epitaxial growth, electronic transport at low and high fields, device architectures, heterostructure designs, fundamental limits to device performance, device fabrication and processing techniques, The workshop will include 7 invited talks, 10 contributed presentations and is expected to be attended by 70 attendees from industry, academia, and government. The organizing committee will select topic leads to assist with selection of attendees. The report prepared on the Workshop will summarize the outcome of the discussions and will be available to all the workshop attendees, as well as other members of the scientific community.