Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA
超宽带隙 (UWBG) 半导体研讨会:研究机会和方向 - 2016 年 4 月 25 日至 26 日,弗吉尼亚州阿灵顿
基本信息
- 批准号:1641056
- 负责人:
- 金额:$ 0.8万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-07-15 至 2017-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The proposed project seeks financial support for organizing a Workshop on the status and challenges of a broad class of semiconductors with bandgaps larger than 3.4 eV, i.e., larger than the bandgap of GaN. Representative materials are AlGaN (including the binary endpoint AlN), diamond, Ga2O3, and their heterostructures. The Workshop will be held April 25-26, 2016 at the Basic Research Innovation and Collaboration Center (BRICC) in Arlington VA. The Workshop will foster advances in the leading research of extreme (ultra) wide-bandgap (UWBG) semiconductors by gathering a diverse group of experts. Topics to be addressed include among other bulk and epitaxial growth, electronic transport at low and high fields, device architectures, heterostructure designs, fundamental limits to device performance, device fabrication and processing techniques, The workshop will include 7 invited talks, 10 contributed presentations and is expected to be attended by 70 attendees from industry, academia, and government. The organizing committee will select topic leads to assist with selection of attendees. The report prepared on the Workshop will summarize the outcome of the discussions and will be available to all the workshop attendees, as well as other members of the scientific community.
拟议的项目寻求财政支持,以组织一个关于带隙大于3.4 eV的一大类半导体的现状和挑战的讲习班,即,大于GaN的带隙。代表性材料是AlGaN(包括二元端点AlN)、金刚石、Ga2O3及其异质结构。研讨会将于2016年4月25日至26日在基础研究创新与合作中心(BRICC)在弗吉尼亚州阿灵顿。该研讨会将通过聚集不同的专家组,促进极端(超)宽带隙(UWBG)半导体领先研究的进展。要解决的主题包括在其他散装和外延生长,电子传输在低和高场,器件架构,异质结构设计,器件性能的基本限制,器件制造和加工技术,该研讨会将包括7个特邀演讲,10个贡献的演讲,预计将由70名与会者来自工业界,学术界和政府。组委会将选择主题线索,以协助选择与会者。为讲习班编写的报告将总结讨论结果,并将提供给讲习班的所有与会者以及科学界的其他成员。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Siddharth Rajan其他文献
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
具有再生 p-AlGaN 栅极层和欧姆接触的富铝 AlGaN 晶体管
- DOI:
10.1002/admi.202301080 - 发表时间:
2024 - 期刊:
- 影响因子:5.4
- 作者:
B.A. Klein;Andrew A. Allerman;A.M. Armstrong;M. Rosprim;Colin Tyznik;Yinxuan Zhu;C. Joishi;Chris Chae;Siddharth Rajan - 通讯作者:
Siddharth Rajan
Design and Simulation of a III-Nitride Light Emitting Transistor
III 族氮化物发光晶体管的设计与仿真
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Mohammad Awwad;Sheikh Ifatur Rahman;C. Joishi;B. L. Anderson;Siddharth Rajan - 通讯作者:
Siddharth Rajan
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy
X 射线光电子能谱测定接枝单晶 Si (0 0 1)/β-Ga2O3 (0 1 0) p-n 异质结的能带排列
- DOI:
10.1016/j.apsusc.2024.159615 - 发表时间:
2023 - 期刊:
- 影响因子:6.7
- 作者:
Jiarui Gong;Jie Zhou;Ashok Dheenan;Moheb Sheikhi;F. Alema;T. Ng;S. Pasayat;Qiaoqiang Gan;A. Osinsky;Vincent Gambin;Chirag Gupta;Siddharth Rajan;Boon S. Ooi;Zhenqiang Ma - 通讯作者:
Zhenqiang Ma
All MOCVD grown Al<sub>0.7</sub>Ga<sub>0.3</sub>N/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
- DOI:
10.1016/j.sse.2019.107696 - 发表时间:
2020-02-01 - 期刊:
- 影响因子:
- 作者:
Hao Xue;Seongmo Hwang;Towhidur Razzak;Choonghee Lee;Gabriel Calderon Ortiz;Zhanbo Xia;Shahadat Hasan Sohel;Jinwoo Hwang;Siddharth Rajan;Asif Khan;Wu Lu - 通讯作者:
Wu Lu
Siddharth Rajan的其他文献
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{{ truncateString('Siddharth Rajan', 18)}}的其他基金
FuSe-TG: Co-design based Wide bandgap Semiconductor Research Center
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2235373 - 财政年份:2023
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$ 0.8万 - 项目类别:
Standard Grant
Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance
合作研究:FuSe:III族氮化物和砷化硼的异质集成以增强热和电子性能
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2329108 - 财政年份:2023
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$ 0.8万 - 项目类别:
Continuing Grant
MRI: Acquisition of Electron Beam Lithography System for Next-Generation Nanomanufacturing and Education
MRI:采购用于下一代纳米制造和教育的电子束光刻系统
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2018876 - 财政年份:2020
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$ 0.8万 - 项目类别:
Standard Grant
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$ 0.8万 - 项目类别:
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Beta-Gallium Oxide Transistors for High Frequency Applications
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1809682 - 财政年份:2018
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$ 0.8万 - 项目类别:
Standard Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
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1740119 - 财政年份:2017
- 资助金额:
$ 0.8万 - 项目类别:
Continuing Grant
PFI:AIR - TT: High Efficiency Ultraviolet Light Emitting Diodes Based on Tunneling
PFI:AIR - TT:基于隧道的高效紫外发光二极管
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1640700 - 财政年份:2016
- 资助金额:
$ 0.8万 - 项目类别:
Standard Grant
Major Research Instrumentation: Development of Epitaxial Growth System for Few Layer Semiconductors
主要研究仪器:少层半导体外延生长系统的开发
- 批准号:
1429143 - 财政年份:2014
- 资助金额:
$ 0.8万 - 项目类别:
Standard Grant
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1450508 - 财政年份:2014
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$ 0.8万 - 项目类别:
Standard Grant
High Conductivity Tunnel Junctions for Next-Generation UV Emitters
用于下一代紫外线发射器的高电导率隧道结
- 批准号:
1408416 - 财政年份:2014
- 资助金额:
$ 0.8万 - 项目类别:
Standard Grant
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