Major Research Instrumentation: Development of Epitaxial Growth System for Few Layer Semiconductors

非技术性：今天的半导体技术被用于许多应用，包括计算、通信、能量转换和传感。今天使用的大多数半导体器件都是由近乎完美的刚性三维晶体固体制成的。然而，最近在新一代层状二维(2D)材料方面的工作引起了极大的科学和技术兴趣。这些材料由单个原子或分子2D层组成，可以放置在柔性塑料或透明玻璃等任意基板上，同时提供可与更昂贵的电子材料相媲美的性能。2D半导体可以实现低成本、灵活和透明的电子学和光电子学，从而对技术产生重大影响。它们还可以实现更低功率的计算以及生物和化学传感器。该项目将为合成这些2D半导体材料开发独特的设备和技术。所开发的材料合成技术将有助于电子工业和设备制造商。该项目将帮助教育几名研究生和研究人员，了解开发新的生长系统、原位表征的新工具以及2D材料的广泛应用和科学的细节。研究小组将组织关于2D层状材料外延的年度研讨会，邀请其他大学的研究人员分享他们在2D半导体生长系统开发方面的经验，并分享在该MRI奖下开发的新工具的信息。技术：当今2D半导体研究领域的主要挑战之一是电子级材料的合成。这一活动直接解决了最重要的挑战，试图开发一种用于合成2D层状材料的专用分子束外延生长系统。由于2D材料所需的生长和表征方法与3D晶体的生长和表征方法有很大不同，该系统将在拥有一套合成和表征能力方面独一无二。分子束外延系统将被专门开发，以帮助理解和控制2D金属-二卤化物外延过程的复杂化学和物理。研究小组将在早期工作的基础上，专注于利用分子束外延合成2D(单层)材料和复杂异质结构。与仪器制造商合作，将开发各种源材料和源类型，以开发一套广泛的技术解决方案，以生长2D层状半导体。该项目将研究生长过程中的现场实时监测和反馈，以实现任意单层和异质结构的自动生长。最终目标是开发一种健壮的、可重复的基于分子束外延的生长方法，适用于进一步的研究(电子/光学特性和器件开发)以及未来的商业化。

Non-technical: Semiconductor technology today is used for many applications including computation, communication, energy conversion, and sensing. Most semiconductor devices used today are built from near-perfect rigid 3-dimensional crystalline solids. However, recent work on a new generation of layered 2-dimensional (2D) materials has generated great scientific and technological interest. These materials consist of single atomic or molecular 2D layers that can be placed on arbitrary substrates such as flexible plastics, or transparent glass while offering performance that is comparable to more expensive electronic materials. 2D semiconductors could have significant impact on technology by enabling low cost flexible and transparent electronics and optoelectronics. They could also enable lower power computation and biological and chemical sensors. This project will enable the development of unique equipment and techniques for synthesis of these 2D semiconductor materials. The material synthesis techniques developed would help the electronics industry as well as equipment manufacturers. The project will help to educate several graduate students and researchers on the details of developing a new growth system, new tools for in situ characterization, and the broad applications and science of 2D materials. The research team will organize annual workshops on 2D layered material epitaxy where researchers from other universities will be invited to share their experiences on development of growth systems for 2D semiconductors, and also share information about the new tools developed under this MRI award.Technical: One of the main challenges in the area of 2D semiconductor research today is the synthesis of electronic grade material. This activity directly addresses the most important challenge by attempting to develop a dedicated molecular beam epitaxial growth system for the synthesis of 2D layered materials. Since the growth and characterization methods needed for 2D materials are quite different from those of 3D crystals, this system will be unique in having a suite of synthesis and characterization capabilities. The MBE system will be specifically developed to help understand and control the complex chemistry and physics of the 2D metal-dichalcogenide epitaxy process. The research team will build upon early work and focus on the synthesis of 2D (monolayer) materials and complex heterostructures by MBE. In collaboration with an instrument manufacturer, a variety of source materials and source types to develop a broad set of technology solutions for growth of 2D layered semiconductors will be developed. The project will investigate in situ real time monitoring and feedback during growth, to enable automatic growth of arbitrary single layers and heterostructures. The ultimate aim is to develop a robust, reproducible MBE-based growth methodology appropriate for further research (electronic/optical properties and device development), as well as future commercialization.