E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices

E2CDA：类型 II：协作研究：低功率开关器件的金属绝缘体转换

• 批准号: 1740119
• 负责人: Siddharth Rajan
• 金额: $ 20万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1740119&HistoricalAwards=false
• 关键词: E2CDA; Type; II; Collaborative; Research

The project focuses on new oxide materials that may enable a new generation of electronic devices for computing. The project will offer interdisciplinary training of graduate and undergraduate students in new electronic devices, materials, and circuits. Their training will be fostered by close collaboration and student exchanges between the investigators' groups at the University of California, Santa Barbara (UCSB) and Ohio State University (OSU). UCSB has a diverse undergraduate population and is a minority/Hispanic-serving institution. Regular phone conferences with industry stakeholders and related activities will ensure knowledge transfer to industry and expose the participating students to matters relevant to the transitioning of new materials and devices into emergent technologies. Novel electronic devices will be realized that employ electric fields to control the unique electronic properties of oxide materials, in particular, their ability to change the electrical resistance by a large amount. These devices will be investigated for their potential as alternatives to current transistor devices used for computing, which are based on conventional semiconductor materials, such as silicon. The project is motivated by unique opportunities, including the potential for abrupt switching and a reduction in the energy that is required to switch. Close collaboration between materials scientists at UCSB and electrical engineers at OSU will focus on optimizing oxide materials, their scientific understanding, and their control using electric fields, and establishing the device characteristics relevant for applications. The results from this project will contribute to a solid-state electronics technology that has been underexplored.

该项目的重点是新的氧化物材料，可能使新一代的电子设备的计算。 该项目将为研究生和本科生提供新电子设备，材料和电路的跨学科培训。 他们的培训将通过加州大学、圣巴巴拉大学（UCSB）和俄亥俄州州立大学（OSU）的研究小组之间的密切合作和学生交流来促进。 UCSB拥有多样化的本科生人口，是一个少数民族/西班牙裔服务机构。 与行业利益相关者和相关活动的定期电话会议将确保知识转移到行业，并使参与的学生接触到与新材料和设备过渡到新兴技术相关的问题。将实现采用电场来控制氧化物材料的独特电子性质的新型电子器件，特别是它们大量改变电阻的能力。 这些器件将被研究其作为当前用于计算的晶体管器件的替代品的潜力，这些晶体管器件基于传统的半导体材料，如硅。 该项目的动机是独特的机会，包括突然切换的可能性和减少切换所需的能量。 UCSB的材料科学家和OSU的电气工程师之间的密切合作将专注于优化氧化物材料，它们的科学理解和使用电场的控制，并建立与应用相关的器件特性。 该项目的成果将有助于开发一种尚未充分开发的固态电子技术。

项目成果

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

• DOI: 10.1002/aelm.202000074
• 发表时间: 2020-07
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Hareesh Chandrasekar;T. Razzak;Caiyu Wang;Zeltzin Reyes;K. Majumdar;S. Rajan