PFI:AIR - TT: High Efficiency Ultraviolet Light Emitting Diodes Based on Tunneling
PFI:AIR - TT:基于隧道的高效紫外发光二极管
基本信息
- 批准号:1640700
- 负责人:
- 金额:$ 20万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-09-15 至 2018-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This AIR Technology Translation project focuses on translating highly efficient ultraviolet light emitters into compact, ultraviolet (UV) light emitting diodes (LEDs). There is a strong market and societal need for efficient UV LEDs for air and water purification, food sterilization, and biomedical and security applications that require compact ultra-violet sources, both in the developed and developing world. These UV LEDs can enable compact, low-cost, and environmentally safe water and air disinfection systems for a variety of applications. This project will result in a prototype of a highly efficient ultraviolet LED with a unique feature, tunneling injected diode structure, that enables significantly higher efficiency, higher power, and lower cost, when compared to leading competitors in this market space. This project addresses the following technology gap(s) as it translates from research discovery toward commercial application. The main challenges to realizing highly efficient tunneling injected ultraviolet light emitters are the low internal quantum efficiency and the low light extraction efficiency. The project will address both of these. Firstly, investigators will study optimization of the light emitters through rigorous experiments studies to improve internal quantum efficiency. Secondly, a careful study of methods to improve the light extraction efficiency will be carried out. In addition, personnel involved in this project, graduate and undergraduate students, will receive innovation and technology translation experiences through their work in developing the high efficiency prototype, and being involved in patenting of intellectual property.
这个AIR技术转换项目的重点是将高效紫外光发射器转换为紧凑型紫外(UV)发光二极管(LED)。无论是在发达国家还是发展中国家,都有强大的市场和社会需求,需要高效的紫外线LED用于空气和水净化、食品灭菌以及需要紧凑型紫外线源的生物医学和安全应用。这些UV LED可以实现紧凑、低成本和环境安全的水和空气消毒系统,用于各种应用。 该项目将产生一种具有独特功能的高效紫外线LED原型,即隧道注入二极管结构,与该市场领域的领先竞争对手相比,该结构可实现更高的效率,更高的功率和更低的成本。 该项目解决了以下技术差距,因为它从研究发现转化为商业应用。实现高效隧穿注入紫外光发射器的主要挑战是低的内量子效率和低的光提取效率。该项目将解决这两个问题。首先,研究人员将通过严格的实验研究来研究光发射器的优化,以提高内部量子效率。其次,将对提高光提取效率的方法进行仔细研究。此外,参与该项目的人员,研究生和本科生,将通过开发高效率原型的工作获得创新和技术翻译经验,并参与知识产权的专利申请。
项目成果
期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
- DOI:10.1063/1.4997328
- 发表时间:2017-05
- 期刊:
- 影响因子:4
- 作者:Yuewei Zhang;S. Krishnamoorthy;F. Akyol;Jared M. Johnson;A. Allerman;M. Moseley;A. Armstrong;Jinwoo Hwang;S. Rajan
- 通讯作者:Yuewei Zhang;S. Krishnamoorthy;F. Akyol;Jared M. Johnson;A. Allerman;M. Moseley;A. Armstrong;Jinwoo Hwang;S. Rajan
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Siddharth Rajan其他文献
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
具有再生 p-AlGaN 栅极层和欧姆接触的富铝 AlGaN 晶体管
- DOI:
10.1002/admi.202301080 - 发表时间:
2024 - 期刊:
- 影响因子:5.4
- 作者:
B.A. Klein;Andrew A. Allerman;A.M. Armstrong;M. Rosprim;Colin Tyznik;Yinxuan Zhu;C. Joishi;Chris Chae;Siddharth Rajan - 通讯作者:
Siddharth Rajan
Design and Simulation of a III-Nitride Light Emitting Transistor
III 族氮化物发光晶体管的设计与仿真
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Mohammad Awwad;Sheikh Ifatur Rahman;C. Joishi;B. L. Anderson;Siddharth Rajan - 通讯作者:
Siddharth Rajan
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy
X 射线光电子能谱测定接枝单晶 Si (0 0 1)/β-Ga2O3 (0 1 0) p-n 异质结的能带排列
- DOI:
10.1016/j.apsusc.2024.159615 - 发表时间:
2023 - 期刊:
- 影响因子:6.7
- 作者:
Jiarui Gong;Jie Zhou;Ashok Dheenan;Moheb Sheikhi;F. Alema;T. Ng;S. Pasayat;Qiaoqiang Gan;A. Osinsky;Vincent Gambin;Chirag Gupta;Siddharth Rajan;Boon S. Ooi;Zhenqiang Ma - 通讯作者:
Zhenqiang Ma
All MOCVD grown Al<sub>0.7</sub>Ga<sub>0.3</sub>N/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
- DOI:
10.1016/j.sse.2019.107696 - 发表时间:
2020-02-01 - 期刊:
- 影响因子:
- 作者:
Hao Xue;Seongmo Hwang;Towhidur Razzak;Choonghee Lee;Gabriel Calderon Ortiz;Zhanbo Xia;Shahadat Hasan Sohel;Jinwoo Hwang;Siddharth Rajan;Asif Khan;Wu Lu - 通讯作者:
Wu Lu
Siddharth Rajan的其他文献
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{{ truncateString('Siddharth Rajan', 18)}}的其他基金
FuSe-TG: Co-design based Wide bandgap Semiconductor Research Center
FuSe-TG:基于协同设计的宽带隙半导体研究中心
- 批准号:
2235373 - 财政年份:2023
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance
合作研究:FuSe:III族氮化物和砷化硼的异质集成以增强热和电子性能
- 批准号:
2329108 - 财政年份:2023
- 资助金额:
$ 20万 - 项目类别:
Continuing Grant
MRI: Acquisition of Electron Beam Lithography System for Next-Generation Nanomanufacturing and Education
MRI:采购用于下一代纳米制造和教育的电子束光刻系统
- 批准号:
2018876 - 财政年份:2020
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
76th Device Research Conference (DRC) to be held at the University of California, Santa Barbara, June 24 to 27, 2018
第 76 届设备研究会议 (DRC) 将于 2018 年 6 月 24 日至 27 日在加州大学圣塔芭芭拉分校举行
- 批准号:
1836790 - 财政年份:2018
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Beta-Gallium Oxide Transistors for High Frequency Applications
适用于高频应用的 β-氧化镓晶体管
- 批准号:
1809682 - 财政年份:2018
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
- 批准号:
1740119 - 财政年份:2017
- 资助金额:
$ 20万 - 项目类别:
Continuing Grant
Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA
超宽带隙 (UWBG) 半导体研讨会:研究机会和方向 - 2016 年 4 月 25 日至 26 日,弗吉尼亚州阿灵顿
- 批准号:
1641056 - 财政年份:2016
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Major Research Instrumentation: Development of Epitaxial Growth System for Few Layer Semiconductors
主要研究仪器:少层半导体外延生长系统的开发
- 批准号:
1429143 - 财政年份:2014
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
Collaborative Research EAGER: Reliable High Current Density Vacuum Electronics
合作研究 EAGER:可靠的高电流密度真空电子器件
- 批准号:
1450508 - 财政年份:2014
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
High Conductivity Tunnel Junctions for Next-Generation UV Emitters
用于下一代紫外线发射器的高电导率隧道结
- 批准号:
1408416 - 财政年份:2014
- 资助金额:
$ 20万 - 项目类别:
Standard Grant
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