MRI: Acquisition of Electron Beam Lithography System for Next-Generation Nanomanufacturing and Education

MRI:采购用于下一代纳米制造和教育的电子束光刻系统

基本信息

  • 批准号:
    2018876
  • 负责人:
  • 金额:
    $ 105万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2020
  • 资助国家:
    美国
  • 起止时间:
    2020-09-01 至 2024-08-31
  • 项目状态:
    已结题

项目摘要

This major research instrumentation project is to acquire an electron beam lithography system to support research and education activities at The Ohio State University (OSU) and surrounding regions. The ability to create patterns precisely and accurately at the nanometer scale is a key enabler for advances in science, engineering, and medicine. Electron beam lithography systems use precisely focused beams of electrons to realize patterns only a few nanometers in size. Such features can be used to study new scientific phenomena, create novel structures, and to engineer technology solutions. Researchers at OSU and in the region will research a broad range of topics with the system. Topics include quantum phenomena in materials, quantum communications, high-performance electronics, and medical applications. The system will be placed in a centralized nanofabrication facility that will ensure long-term sustainability of the equipment, and open access to a broad range of users within and outside the university. The tool will allow a large number of users to apply state-of-art patterning technology for education, science, engineering, and product development. The system will be used to train undergraduate and graduate students at Ohio State and other educational institutions. An outreach program will engage students and teachers from schools in the Columbus metropolitan region with researchers. High school students will learn how fundamental science concepts in waves, optics and electronics connect to real-life applications through hands-on projects and tours of clean room facilities at Ohio State University.Acquisition of a modern state-of-art electron beam lithography system would spur research in a range of areas, including 2-dimensional material electronics and mechanics, infrared sensors, integrated photonics, high-frequency electronics, quantum communication, metallurgy, earth sciences, and medical research. The impacted research projects would lead to advances in our understanding of fundamental physical properties of materials and systems at the nanometer scale, and of novel electronic, magnetic, and optical phenomena in these materials. A range of technologies and applications with significant economic and societal impact will benefit from the availability of the proposed electron beam lithography system, which will enable disruptive innovation in several directions including next-generation high data rate communication systems, imaging for medical, security, and space remote-sensing application, quantum information systems, cell engineering for medical applications, and new semiconductor materials for energy-efficient power electronics and computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该重大研究仪器项目旨在购买电子束光刻系统,以支持俄亥俄州立大学 (OSU) 及周边地区的研究和教育活动。在纳米尺度上精确地创建图案的能力是科学、工程和医学进步的关键推动力。电子束光刻系统使用精确聚焦的电子束来实现尺寸仅为几纳米的图案。这些功能可用于研究新的科学现象、创造新颖的结构以及设计技术解决方案。俄勒冈州立大学和该地区的研究人员将利用该系统研究广泛的主题。主题包括材料中的量子现象、量子通信、高性能电子和医疗应用。该系统将放置在一个集中的纳米制造设施中,以确保设备的长期可持续性,并向大学内外的广泛用户开放。该工具将允许大量用户将最先进的图案技术应用于教育、科学、工程和产品开发。该系统将用于培训俄亥俄州立大学和其他教育机构的本科生和研究生。一项外展计划将使哥伦布大都市区学校的学生和教师与研究人员接触。高中生将通过动手项目和参观俄亥俄州立大学的洁净室设施,了解波、光学和电子学的基础科学概念如何与现实生活中的应用联系起来。购买现代最先进的电子束光刻系统将促进一系列领域的研究,包括二维材料电子学和力学、红外传感器、集成光子学、高频电子学、量子通信、 冶金、地球科学和医学研究。受影响的研究项目将促进我们对纳米尺度材料和系统的基本物理特性以及这些材料中新颖的电子、磁和光学现象的理解。一系列具有重大经济和社会影响的技术和应用将受益于拟议的电子束光刻系统的可用性,该系统将在多个方向实现颠覆性创新,包括下一代高数据速率通信系统、医疗成像、安全和空间遥感应用、量子信息系统、医疗应用的细胞工程以及用于节能电力电子和计算的新型半导体材料。该奖项反映了 NSF 的 法定使命,并通过使用基金会的智力优点和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

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Siddharth Rajan其他文献

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
具有再生 p-AlGaN 栅极层和欧姆接触的富铝 AlGaN 晶体管
  • DOI:
    10.1002/admi.202301080
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    5.4
  • 作者:
    B.A. Klein;Andrew A. Allerman;A.M. Armstrong;M. Rosprim;Colin Tyznik;Yinxuan Zhu;C. Joishi;Chris Chae;Siddharth Rajan
  • 通讯作者:
    Siddharth Rajan
Design and Simulation of a III-Nitride Light Emitting Transistor
III 族氮化物发光晶体管的设计与仿真
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Mohammad Awwad;Sheikh Ifatur Rahman;C. Joishi;B. L. Anderson;Siddharth Rajan
  • 通讯作者:
    Siddharth Rajan
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy
X 射线光电子能谱测定接枝单晶 Si (0 0 1)/β-Ga2O3 (0 1 0) p-n 异质结的能带排列
  • DOI:
    10.1016/j.apsusc.2024.159615
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    6.7
  • 作者:
    Jiarui Gong;Jie Zhou;Ashok Dheenan;Moheb Sheikhi;F. Alema;T. Ng;S. Pasayat;Qiaoqiang Gan;A. Osinsky;Vincent Gambin;Chirag Gupta;Siddharth Rajan;Boon S. Ooi;Zhenqiang Ma
  • 通讯作者:
    Zhenqiang Ma
All MOCVD grown Al<sub>0.7</sub>Ga<sub>0.3</sub>N/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
  • DOI:
    10.1016/j.sse.2019.107696
  • 发表时间:
    2020-02-01
  • 期刊:
  • 影响因子:
  • 作者:
    Hao Xue;Seongmo Hwang;Towhidur Razzak;Choonghee Lee;Gabriel Calderon Ortiz;Zhanbo Xia;Shahadat Hasan Sohel;Jinwoo Hwang;Siddharth Rajan;Asif Khan;Wu Lu
  • 通讯作者:
    Wu Lu

Siddharth Rajan的其他文献

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{{ truncateString('Siddharth Rajan', 18)}}的其他基金

FuSe-TG: Co-design based Wide bandgap Semiconductor Research Center
FuSe-TG:基于协同设计的宽带隙半导体研究中心
  • 批准号:
    2235373
  • 财政年份:
    2023
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance
合作研究:FuSe:III族氮化物和砷化硼的异质集成以增强热和电子性能
  • 批准号:
    2329108
  • 财政年份:
    2023
  • 资助金额:
    $ 105万
  • 项目类别:
    Continuing Grant
76th Device Research Conference (DRC) to be held at the University of California, Santa Barbara, June 24 to 27, 2018
第 76 届设备研究会议 (DRC) 将于 2018 年 6 月 24 日至 27 日在加州大学圣塔芭芭拉分校举行
  • 批准号:
    1836790
  • 财政年份:
    2018
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
Beta-Gallium Oxide Transistors for High Frequency Applications
适用于高频应用的 β-氧化镓晶体管
  • 批准号:
    1809682
  • 财政年份:
    2018
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
  • 批准号:
    1740119
  • 财政年份:
    2017
  • 资助金额:
    $ 105万
  • 项目类别:
    Continuing Grant
Workshop on Ultra-Wide Band Gap (UWBG) Semiconductors: Research Opportunities and Directions- April 25-26, 2016, Arlington VA
超宽带隙 (UWBG) 半导体研讨会:研究机会和方向 - 2016 年 4 月 25 日至 26 日,弗吉尼亚州阿灵顿
  • 批准号:
    1641056
  • 财政年份:
    2016
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
PFI:AIR - TT: High Efficiency Ultraviolet Light Emitting Diodes Based on Tunneling
PFI:AIR - TT:基于隧道的高效紫外发光二极管
  • 批准号:
    1640700
  • 财政年份:
    2016
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
Major Research Instrumentation: Development of Epitaxial Growth System for Few Layer Semiconductors
主要研究仪器:少层半导体外延生长系统的开发
  • 批准号:
    1429143
  • 财政年份:
    2014
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
Collaborative Research EAGER: Reliable High Current Density Vacuum Electronics
合作研究 EAGER:可靠的高电流密度真空电子器件
  • 批准号:
    1450508
  • 财政年份:
    2014
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant
High Conductivity Tunnel Junctions for Next-Generation UV Emitters
用于下一代紫外线发射器的高电导率隧道结
  • 批准号:
    1408416
  • 财政年份:
    2014
  • 资助金额:
    $ 105万
  • 项目类别:
    Standard Grant

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