MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
批准号:
1126061
负责人:
Mansour Shayegan
金额:
$43.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-10-01 至 2015-09-30
中文摘要
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英文摘要
AbstractIntellectual Merit -- The goal of this project is to acquire and set up a cryogen-free dilution refrigerator with a base temperature of about 0.010 Kelvin and a superconducting magnet with a maximum field of 12 Tesla. This equipment will be shared by eight Principal Investigators and collaborators, and will be used by their graduate and undergraduate students, post-docs and research staff. It will be initially devoted to measurements of electronic properties of low-dimensional semiconductor structures, topological insulators, and graphene. All these material systems are at the forefront of current, fundamental solid state physics and device research. They also have potential transformative applications, e.g., in quantum computing and information processing. The cryogen-free system will enhance the research on these materials in several crucial ways: (1) It will allow measurements at low temperatures and in tilted magnetic fields to learn exciting new physics. (2) Because the operation of the proposed equipment is much simpler than the conventional dilution refrigerators, it will tremendously enhance the efficiency of the measurements and research progress. (3) It will allow the inclusion of undergraduate students in research projects more easily. (4) It will replace our existing equipment which is instrumental to our research but is over 20 years old, has frequent problems, and does not reach below about 0.03 Kelvin. (5) Each year it will save over $100,000 worth of materials (liquid Helium) cost. This will have a huge impact on the ability to make measurements and produce new results more efficiently. (6) It will save Helium, a precious noble gas.Broader Impacts -- The impact of the proposed project will be seen in the scientific community and beyond. Results of the research will be communicated through publications and conference presentations to the specialized as well as general science and engineering communities. While the subject of this project is fundamental, progress in this area will benefit society in the long term as it may lead to novel, transformative concepts for electronic materials and devices and information processing systems whose operation relies on quantum and/or interaction phenomena. The project incorporates a high quality and comprehensive educational component. The PIs are dedicated to the education of both graduate and undergraduate students. They all have typically small groups (4 to 6) of students, and their belief is that doing good quality research, with close supervision, is the best way to teach beyond textbooks and problem sets. The project will therefore result in the education of students in critical, state-of-the art areas of science and technology, including the fabrication, characterization, and physics of high quality layered semiconductor structures and other novel materials such as topological insulators and graphene. Well-trained students in these fields will be invaluable resources for the US as well as for the rest of the world. The PIs will also make every effort to attract to this project students from underrepresented groups.The PIs are committed to a broader education of the public in science and engineering. Some of the topics and results of this project will be incorporated into undergraduate and graduate courses that they teach at Princeton University. The PIs will also participate in various K-12 demonstrations and teacher training programs in electricity and magnetism and in cryogenic temperatures, general areas that are closely linked to the topic of this proposal. These activities include training sessions, kit development, and demonstrations at regional schools and at Princeton University.
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批准号:2104771
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项目类别:Standard Grant
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资助金额:$68.0万
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财政年份:2021
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负责人:Mansour Shayegan
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依托单位:
Electronic spin and valley degrees of freedom - based novel quantum devices
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批准号:1906253
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资助金额:$40.5万
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财政年份:2019
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依托单位:
Probing Exotic Phases of Two-dimensional Electrons in Unconventional Systems
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批准号:1709076
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项目类别:Continuing Grant
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资助金额:$74.24万
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财政年份:2018
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负责人:Mansour Shayegan
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依托单位:
Toward Spin- and Valleytronic Devices
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批准号:1508925
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2015
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负责人:Mansour Shayegan
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依托单位:
Interacting Two-dimensional Electrons in Unconventional Systems
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批准号:1305691
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项目类别:Continuing Grant
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资助金额:$62.0万
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财政年份:2013
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负责人:Mansour Shayegan
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依托单位:
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
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批准号:1001719
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Mansour Shayegan
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依托单位:
Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
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批准号:0904117
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项目类别:Continuing Grant
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资助金额:$61.0万
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财政年份:2009
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负责人:Mansour Shayegan
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依托单位:
Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
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批准号:0701550
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
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批准号:0502477
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项目类别:Continuing Grant
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资助金额:$56.0万
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财政年份:2005
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负责人:Mansour Shayegan
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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批准号:0400661
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项目类别:Standard Grant
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2002
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负责人:Mansour Shayegan
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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批准号:0113046
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
Quantum Hall Effect and Mesoscopic Physics
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批准号:0108024
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
A Spin Interference Device
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批准号:0080458
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2000
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负责人:Mansour Shayegan
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依托单位:
Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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批准号:9971021
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Mansour Shayegan
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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批准号:9623511
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项目类别:Continuing Grant
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资助金额:$33.87万
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财政年份:1996
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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批准号:9222418
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1993
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负责人:Mansour Shayegan
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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批准号:9111897
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项目类别:Standard Grant
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资助金额:$3.02万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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批准号:9112740
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项目类别:Continuing Grant
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资助金额:$20.4万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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批准号:8921073
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项目类别:Continuing Grant
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资助金额:$24.5万
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财政年份:1990
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负责人:Mansour Shayegan
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依托单位:
海外基金